Semiconductor Light-Emitting Diode and Method for Producing a Semiconductor Light-Emitting Diode
First Claim
1. A semiconductor light-emitting diode (10) comprising:
- at least one p-doped light-emitting diode layer, an n-doped light-emitting diode layer and an optically active zone between the p-doped light-emitting diode layer and the n-doped light-emitting diode layer;
an oxide layer of a transparent conductive oxide; and
at least one mirror layer;
wherein the oxide layer is disposed between the light-emitting diode layers and the at least one mirror layer, and comprises a first boundary surface which faces the light-emitting diode layers and a second boundary surface (8b) which faces the at least one mirror layer, andwherein the second boundary surface of the oxide layer has less roughness than the first boundary surface of the oxide layer.
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Abstract
A semiconductor light-emitting diode (10) is proposed having at least one p-doped light-emitting diode layer (4), an n-doped light-emitting diode layer (2) and an optically active zone (3) between the p-doped light-emitting diode layer (4) and the n-doped light-emitting diode layer (2), having an oxide layer (8) consisting of a transparent conductive oxide, and having at least one mirror layer (9), wherein the oxide layer (8) is disposed between the light-emitting diode layers (2, 4) and the at least one mirror layer (9), and comprises a first boundary surface (8a) which faces the light-emitting diode layers (2, 4) and a second boundary surface (8b) which faces the at least one mirror layer (9), and wherein the second boundary surface (8b) of the oxide layer (8) has less roughness (R2) than the first boundary surface (8a) of the oxide layer (8).
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Citations
15 Claims
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1. A semiconductor light-emitting diode (10) comprising:
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at least one p-doped light-emitting diode layer, an n-doped light-emitting diode layer and an optically active zone between the p-doped light-emitting diode layer and the n-doped light-emitting diode layer; an oxide layer of a transparent conductive oxide; and at least one mirror layer; wherein the oxide layer is disposed between the light-emitting diode layers and the at least one mirror layer, and comprises a first boundary surface which faces the light-emitting diode layers and a second boundary surface (8b) which faces the at least one mirror layer, and wherein the second boundary surface of the oxide layer has less roughness than the first boundary surface of the oxide layer. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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2. A semiconductor light-emitting diode comprising:
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at least one p-doped light-emitting diode layer, an n-doped light-emitting diode layer and an optically active zone between the p-doped light-emitting diode layer and the n-doped light-emitting diode layer; an oxide layer of a transparent conductive oxide; and at least one mirror layer; wherein the oxide layer is disposed between the light-emitting diode layers and the at least one mirror layer, and comprises a first boundary surface (8a) which faces the light-emitting diode layers and a second boundary surface which faces the at least one mirror layer, and wherein the second boundary surface of the oxide layer has a roughness which is less than 1.0 nm.
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14. A method for producing a semiconductor light-emitting diode, wherein the method comprises the steps of:
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forming at least one p-doped light-emitting diode layer and an n-doped light-emitting diode layer; depositing a transparent conductive oxide, wherein an oxide layer is formed which comprises a first boundary surface which faces the light-emitting diode layers, wherein the oxide layer is deposited by means of HF-assisted DC sputtering and in doing so a second boundary surface of the oxide layer opposing the first boundary surface is produced which has less roughness than the first boundary surface of the oxide layer; and forming at least one mirror layer above the second boundary surface of the oxide layer. - View Dependent Claims (15)
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Specification