LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE

• US 20110198645A1
• Filed: 02/07/2011
• Published: 08/18/2011
• Est. Priority Date: 02/12/2010
• Status: Abandoned Application

• Current Assignee: LG Innotek Company Limited (LG Corporation)
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Kim, Sun Kyung, Jo, Kyoung Woo
• Application Number:
  US13/022,255
• Publication Number:
  US 20110198645A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01055 Cesium [Cs]
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/58 Optical field-shaping elements

Abstract

Disclosed are a light emitting device, a method of manufacturing the same and a light emitting device package. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a fluorescent layer on the light emitting structure; and a light extracting structure on the fluorescent layer. The light extracting structure extracts light, which is generated in the light emitting structure and incident into an interfacial surface between the fluorescent layer and the light extracting structure, to an outside of the light emitting structure.

Claims

1. A light emitting device comprising:

a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers;

a fluorescent layer on the light emitting structure; and

a light extracting structure on the fluorescent layer,

wherein the light extracting structure extracts light which is generated in the light emitting structure and incident into an interfacial surface between the fluorescent layer and the light extracting structure, to an outside of the light emitting structure.

2. The light emitting device as claimed in claim 1, wherein the light extracting structure comprises a periodic pattern or a non-periodic pattern.

3. The light emitting device as claimed in claim 1, wherein the fluorescent layer has an uniform thickness.

4. The light emitting device as claimed in claim 1, wherein the light extracting structure comprises a dielectric substance including at least one of oxide, nitride and chloride.

5. The light emitting device as claimed in claim 1, wherein the light extracting structure comprises a material having a refractive index different from that of the fluorescent layer.

6. The light emitting device as claimed in claim 1, further comprising a background material on the light extracting structure, wherein the background material has a refractive index different from that of the light extracting structure.

7. The light emitting device as claimed in claim 2, wherein the pattern has a period of 50 nm to 3000 nm.

8. A light emitting device package comprising:

a light emitting device claimed in claim 1; and

a package body to install the light emitting device therein.