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SEMICONDUCTOR DEVICES CONTAINING TRENCH MOSFETS WITH SUPERJUNCTIONS

  • US 20110198689A1
  • Filed: 02/17/2010
  • Published: 08/18/2011
  • Est. Priority Date: 02/17/2010
  • Status: Abandoned Application
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate heavily doped with a dopant of a first conductivity type;

    an epitaxial layer on the substrate, the epitaxial layer being lightly doped with a dopant of a second conductivity type;

    a trench formed in the epitaxial layer, the trench containing a MOSFET structure without a shield electrode and also containing a sidewall that is lightly doped with a dopant of a first conductivity type;

    a source layer contacting an upper surface of the epitaxial layer and an upper surface of the MOSFET structure; and

    a drain contacting a bottom portion of the substrate.

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