Band Gap Reference Circuit

• US 20110199069A1
• Filed: 02/16/2011
• Published: 08/18/2011
• Est. Priority Date: 02/17/2010
• Status: Active Grant

• Current Assignee: ams AG (Ams-Osram AG)
• Original Assignee: ams AG (Ams-Osram AG)
• Inventors: SINGNURKAR, Pramod
• Granted Patent: US 8,933,683 B2
• Time in Patent Office: Days
• US Class Current: 323/313
• CPC Class Codes: G05F 3/30 Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities G05F3/26 takes precedence

Abstract

A band gap reference circuit comprises a first branch (1) having a first transistor (Q1) and a first temperature-dependent resistive element (S0). A second branch of the band gap reference comprises a second transistor (Q2) having a different size compared to the first transistor (Q1). An output branch (3) comprises a second temperature-dependent resistive element (S1, S2), that second temperature-dependent resistive element being coupled to an output terminal (Vref). At least one of the first and second temperature-dependent resistive elements (S0, S1, S2) comprises a transistor (M2) being arranged in a current path of the respective branch (1, 3) and being controlled such that it operates in a linear region of its characteristics.

Claims

1. A band gap reference circuit, comprising:

a first branch comprising a first transistor element and a first temperature dependant resistive element;

a second branch comprising a second transistor element having a size different from the first transistor element;

an output branch comprising an second temperature dependant resistive element, said second temperature dependant resistive element being coupled to an output terminal; and

a control element coupled to the first and second branch to control a current through the first and second branches;

wherein each of the first and second temperature dependant resistive elements, comprise a transistor being arranged in a current path of the respective branch and being controlled such that it operates in its linear region of its characteristics.

2. The band gap reference circuit according to claim 1, wherein said first temperature dependant element comprises a first current mirror, said first current mirror comprising a first input transistor and a first mirror transistor, wherein each control terminal of said first input transistor and said first mirror transistor is coupled to a terminal of the input transistor.

3. The band gap reference circuit according to claim 2, wherein the first mirror transistor comprises a channel width, which is greater than a respective channel width of the first input transistor.

4. The band gap reference circuit according to claim 1, wherein said second temperature dependant resistive element comprises a second current mirror, said second current mirror comprising a second input transistor and a second mirror transistor, each control terminal of both said second input transistor and said second mirror transistor is coupled to a terminal of the second input transistor.

5. The band gap reference circuit according to claim 4, wherein the second temperature dependant resistive element comprises a further current mirror, said further current mirror comprising a further input transistor and further mirror transistor, wherein the further input transistor is coupled to an input terminal of the second mirror transistor and each control terminal of both transistors of the further current mirror is coupled to a terminal of the second input transistor.

6. The band gap reference circuit according to claim 1, wherein said second temperature dependant resistive element comprises a plurality of current mirrors,

wherein each current mirror comprises an input transistor and a mirror transistor;

wherein each control terminal of both transistors is coupled to a first terminal of the respective input transistor; and

wherein a terminal of a current mirror transistor of at least one of the plurality of current mirrors is coupled to a second terminal of an input transistor of a subsequent current mirror.

7. The band gap reference circuit according to claim 1, wherein the respective mirror transistor comprises a channel width which is greater than a respective channel width of the respective input transistor.

8. The band gap reference circuit according to claim 1, wherein the transistor of the second temperature dependant resistive element comprises a channel length, said channel length being greater than a channel length of the transistor of the first temperature dependant resistive element.

9. The band gap reference circuit according to claim 1, wherein the output branch comprises a current transistor element comprising a temperature dependence opposite to the temperature dependence of said second temperature dependant resistive element.

10. The band gap reference circuit according to claim 1, wherein a node between the second temperature dependant resistive element and a ground terminal is coupled to a node between the first temperature dependant resistive element and the first transistor element.

11. The band gap reference circuit according to claim 1, wherein the control element comprises one of the following:

a comparator, whose inputs are coupled to the first and second branch, respectively;

a current mirror, comprising a third mirror transistor arranges in the first branch and an input transistor arranged in the second branch, and a fourth current mirror comprising an input transistor arranged in the first branch and a mirror transistor arranged in the second branch.

12. The band gap reference circuit according to claim 1, wherein the first and second transistor elements, each comprises at least one bipolar transistor, said at least one bipolar transistor comprising a negative proportional temperature dependency.

13. The band gap reference circuit according to claim 1, wherein the output branch comprises a transistor element, said transistor element arranged between the second temperature dependant element and a reference potential terminal with a control terminal of the third transistor element being coupled to the reference potential terminal.

14. The band gap reference circuit according to claim 13, wherein the transistor element of the output branch comprises a temperature dependency similar to the temperature dependency of the first transistor element.