Suspended Thin Film Structures
First Claim
1. A method of preparing a structure comprising an atomically thin film (“
- ATF”
) suspended across at least one hole in a support mesh, comprising the steps of;
(a) obtaining an ATF layer on a surface of a solid substrate;
(b) attaching the ATF layer on the solid substrate from step (a) to a support mesh having at least one hole therein;
(c) removing the solid substrate, leaving the ATF layer from the substrate attached to the support mesh and suspended across at least on hole in the support mesh; and
(d) removing any contaminants remaining on the ATF layer, to obtain said structure.
2 Assignments
0 Petitions
Accused Products
Abstract
Disclosed is a method of preparing a support structure suitable for use, e.g., in microscopic studies, comprising a free standing atomically thin film (e.g. graphene) suspended across an opening in the support structure. The method in one aspect comprises the steps of preparing a thin film which is an atomically thin film (e.g., graphene) on a surface of a solid substrate to form a graphene-layered substrate; attaching the graphene layer to a hole-containing support mesh; removing the solid support, thereby transferring the graphene layer from the substrate to the carbonaceous hole-containing layer on the support mesh; and then removing contaminants to obtain said structure. In another aspect, the present method does not involve a transfer, but comprises a lithography and etching process in which the atomically thin layer is applied to a support which is marked with a lithographic pattern and selectively etched, leaving the free standing film.
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Citations
36 Claims
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1. A method of preparing a structure comprising an atomically thin film (“
- ATF”
) suspended across at least one hole in a support mesh, comprising the steps of;(a) obtaining an ATF layer on a surface of a solid substrate; (b) attaching the ATF layer on the solid substrate from step (a) to a support mesh having at least one hole therein; (c) removing the solid substrate, leaving the ATF layer from the substrate attached to the support mesh and suspended across at least on hole in the support mesh; and (d) removing any contaminants remaining on the ATF layer, to obtain said structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
- ATF”
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16. A structure for use in preparing a support structure for a suspended single layer atomically thin film, comprising:
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(a) an essentially single layer atomically thin film layer on a substrate; and (b) a hole-containing layer on a support mesh attached to said atomically thin film layer by bonding of the atomically thin film layer to the hole-containing layer. - View Dependent Claims (17, 18, 19, 20, 21)
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22. A method of preparing a structure comprising an atomically thin film (“
- ATF”
) suspended across at least one hole in a support mesh, comprising the steps of;(a) obtaining an ATF layer on a surface of a solid substrate, said solid substrate having a first ATF layered side and an opposing second side; (b) preparing an etching pattern on the opposing second side of the substrate, the etching pattern comprising defined portions of the substrate to be etched;
then(c) etching the defined portions to remove substrate, leaving the ATF layer suspended across at least one hole formed by etched portions and leaving unetched portions forming a support mesh; and
then(d) removing contaminants to obtain said structure having an atomically thin film layer suspended across at least one hole in a support mesh. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36)
- ATF”
Specification