METHODS OF FABRICATING LARGE-AREA, SEMICONDUCTING NANOPERFORATED GRAPHENE MATERIALS

• US 20110201201A1
• Filed: 01/25/2011
• Published: 08/18/2011
• Est. Priority Date: 01/26/2010
• Status: Active Grant

• Current Assignee: Wisconsin Alumni Research Foundation (University of Wisconsin System)
• Original Assignee: Wisconsin Alumni Research Foundation (University of Wisconsin System)
• Inventors: Gopalan, Padma, Safron, Nathaniel S., Kim, Myungwoong, Arnold, Michael S.
• Granted Patent: US 8,268,180 B2
• Time in Patent Office: Days
• US Class Current: 438/694
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C01B 32/194 After-treatment

Abstract

Methods for forming a nanoperforated graphene material are provided. The methods comprise forming an etch mask defining a periodic array of holes over a graphene material and patterning the periodic array of holes into the graphene material. The etch mask comprises a pattern-defining block copolymer layer, and can optionally also comprise a wetting layer and a neutral layer. The nanoperforated graphene material can consist of a single sheet of graphene or a plurality of graphene sheets.

Claims

1. A method for forming a nanoperforated graphene material, the method comprising forming an etch mask defining an array of holes over a graphene material and patterning the array of holes into the graphene material, wherein the etch mask comprises a wetting layer in contact with the graphene material, a neutral layer comprising a copolymer disposed over the wetting layer, and a pattern-defining block copolymer layer disposed over the neutral layer.

2. The method of claim 1, wherein the wetting layer comprises a self-assembled mono layer.

3. The method of claim 2, wherein the self-assembled monolayer comprises molecules having a first end that is sufficiently polar to undergo an attractive interaction with the copolymer of the neutral layer and a second end comprising a plurality of conjugated rings that undergo a π

-π

stacking interaction with the graphene material.

4. The method of claim 3, wherein the first end of the molecules comprise an acid group and second end of the molecules comprise at least three fused six-member aromatic rings.

5. The method of claim 4, wherein the molecules are pyrene butyric acid molecules.

6. The method of claim 1, wherein the wetting layer comprises silicon oxide.

7. The method of claim 1, wherein the holes in the array of holes have diameters of no greater than about 20 nm.

8. The method of claim 7, wherein the nanoperforated graphene material has a nanoperforated area of at least about 1 mm².

9. The method of claim 8, wherein the nanoperforated graphene material has an electronic bandgap of at least 100 meV.

10. The method of claim 1, wherein the neutral layer comprises a random copolymer of methylmethacrylate, styrene and glycidyl methacrylate and the pattern-defining copolymer layer comprises a cylinder-forming diblock copolymer of styrene and methyl methacrylate.

11. A method for forming a nanoperforated graphene material, the method comprising coating a pattern-forming block copolymer onto a graphene material, exposing the pattern-forming block copolymer to a vapor atmosphere saturated with an annealing solvent for a time sufficient to allow the pattern-forming block copolymer to self-assemble into oriented domains, selectively removing at least some of the domains to form an etch mask defining an array of holes, and patterning the array of holes into the graphene material.

12. The method of claim 11, wherein the pattern-defining copolymer comprises a cylinder-forming diblock copolymer of styrene and methyl methacrylate and the annealing solvent comprises carbon disulfide.

13. A method for forming a nanoperforated graphene material, the method comprising:

(a) forming an etch mask defining an array of holes on a substrate, wherein the etch mask comprises a wetting layer in contact with the substrate, a neutral layer comprising a copolymer disposed over the wetting layer, and a pattern-defining block copolymer layer comprising a plurality of ordered domains disposed over the neutral layer;

(b) removing the wetting layer and the neutral layer from the etch mask and separating the pattern-defining block copolymer layer from the substrate;

(c) transferring the separated pattern-defining block copolymer layer onto a graphene material; and

(d) patterning the array of holes into the graphene material.

14. The method of claim 13, wherein removing the wetting layer and the neutral layer from the etch mask comprises immersing the etch mask in an etchant solution that selectively etches the wetting layer and the neutral layer.

15. The method of claim 13, wherein the pattern-defining block copolymer layer comprises a cylinder-forming diblock copolymer of styrene and methyl methacrylate.

16. A method for forming a nanoperforated graphene material, the method comprising:

(a) forming an etch mask over a graphene material, wherein the etch mask comprises a protective layer comprising an uncrosslinked polymer in contact with the graphene material, an etch stop layer disposed over the protective layer, and a pattern-forming block copolymer layer comprising a plurality of ordered domains disposed over the etch stop layer;

(b) selectively etching away at least some of the domains to form an array of holes in the pattern-forming block copolymer layer, wherein the etch stop layer is comprised of a material that is resistant to the etchant used to etch away the domains;

(c) patterning the array of holes through the etch stop layer, the protective layer and the graphene material in one or more subsequent etching steps; and

(d) removing the remaining etch stop layer and protective layer from the graphene material.

17. The method of claim 16, wherein the uncrosslinked polymer comprises uncrosslinked polystyrene, the etch stop layer comprises silicon oxide and the pattern-forming block copolymer comprises a cylinder-forming diblock copolymer of styrene and methyl methacrylate.

18. The method of claim 17, wherein the etchants used to etch away at least some of the domains in the pattern-forming block copolymer comprise ultraviolet radiation and an oxygen plasma, the etchant used to pattern the array of holes through the etch stop layer comprises a fluorine-containing gas, and the etchant used to pattern the array of holes through the protective layer and the graphene material comprises an oxygen plasma.

19. The method of claim 16, wherein the holes in the array of holes have diameters of no greater than about 20 nm.

20. The method of claim 19, wherein the nanoperforated graphene material has a nanoperforated area of at least about 1 mm².