GAS INJECTION SYSTEM FOR ETCHING PROFILE CONTROL

• US 20110203735A1
• Filed: 02/23/2011
• Published: 08/25/2011
• Est. Priority Date: 02/23/2010
• Status: Abandoned Application

• Current Assignee: DMS Co., Ltd.
• Original Assignee: DMS Co., Ltd.
• Inventors: SEO, Seongsul, CHAE, Yunsook, LEE, Weonmook, CHAE, Hwankook, KIM, Keehyun, KO, Sungyong
• Application Number:
  US13/032,861
• Publication Number:
  US 20110203735A1
• Time in Patent Office: Days
• US Class Current: 156/345.34
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

A gas injection system provided in a plasma etching equipment is provided. The system includes a top gas injector for supplying a reaction gas at a top of a chamber, and a side gas injector for supplying a tuning gas from a side surface of the chamber or a backside gas injector upward jetting a tuning gas from a lower side of a wafer. The side gas injector or backside gas injector forms a plurality of jets in a radial shape and simultaneously installs the jets adjacently to an edge part of a wafer such that a tuning gas is jetted adjacently to the edge part of the wafer, thereby being capable of easily controlling a an etch rate or CD uniformity or profile of the edge part.

Claims

1. A gas injection system for etching profile control, the system comprising:

a top gas injector for supplying a reaction gas at a top of a chamber; and

a side gas injector having a plurality of jets formed in a radial shape such that a tuning gas is simultaneously jetted in a plurality of positions along an inner circumference of the chamber, and having guidance ducts each connected and installed at one ends of the jets such that the tuning gas is jetted adjacently to an edge part of a wafer loaded inside the chamber.

2. The system of claim 1, wherein the guidance duct has a center part downward bent and formed such that its front end is positioned adjacently to an upper part of the edge part of the wafer.

3. The system of claim 1, wherein the guidance duct is installed such that its front end is adjacent to an upper part of the edge part of the wafer, and is downward tilted such that the tuning gas is jetted at a constant angle from the outside direction of the wafer to the edge part.

4. The system of any of claim 1, wherein a gas inlet is formed at an outer part of the side gas injector, and a distribution channel is formed in the inner part of the side gas injector such that the gas inlet communicates with the plurality of jets.

5. The system of claim 4, wherein the distribution channel is through formed in the inner part of the side gas injector to form a concentric circle with the side gas injector.

6. A gas injection system for etching profile control, the system comprising:

a top gas injector for supplying a reaction gas at a top of a chamber; and

a backside gas injector out inserted and installed in an outer circumference of an upper part of an ElectroStatic Chuck (ESC) on which a wafer is loaded, and having a plurality of jets spaced and formed at an upper surface such that a tuning gas is upward jetted adjacently to an edge part of the wafer.

7. The system of claim 6, wherein a gas inlet is formed at an outer part of the backside gas injector, and a distribution channel is formed in the inner part of the backside gas injector such that the gas inlet communicates with the plurality of jets.

8. The system of claim 6, wherein a gas inlet is formed in a lower surface of the backside gas injector, and a distribution channel is formed in the inner part of the backside gas injector such that the gas inlet communicates with the plurality of jets, and a through-path is formed in the ESC supporting the wafer and backside gas injector to communicate with the gas inlet.

9. The system of claim 7, wherein the distribution channel is through formed in the inner part of the backside gas injector to form a concentric circle with the backside gas injector.