FULLERENE-DOPED NANOSTRUCTURES AND METHODS THEREFOR
First Claim
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1. A method for doping a carbon nanotube-based nanostructure, the method comprising:
- applying a fullerene-based material to an outer surface of the nanostructure, the fullerene-based material having a Fermi level that is below the Fermi level of the nanostructure;
using the applied fullerene-based material to grow a fullerene-based dopant material on the nanostructure; and
doping the surface of the nanostructure with a dopant from the fullerene-based dopant material to effect a charge transfer from the dopant to the nanostructure and form a hybrid material including a portion of the nanostructure and the dopant, the hybrid material exhibiting a conductivity that is greater than a conductivity of the nanostructure, prior to doping via the fullerene-based dopant material.
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Abstract
Nanostructures are doped to set conductivity characteristics. In accordance with various example embodiments, nanostructures such as carbon nanotubes are doped with a halogenated fullerene type of dopant material. In some implementations, the dopant material is deposited from solution or by vapor deposition, and used to dope the nanotubes to increase the thermal and/or electrical conductivity of the nanotubes.
53 Citations
28 Claims
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1. A method for doping a carbon nanotube-based nanostructure, the method comprising:
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applying a fullerene-based material to an outer surface of the nanostructure, the fullerene-based material having a Fermi level that is below the Fermi level of the nanostructure; using the applied fullerene-based material to grow a fullerene-based dopant material on the nanostructure; and doping the surface of the nanostructure with a dopant from the fullerene-based dopant material to effect a charge transfer from the dopant to the nanostructure and form a hybrid material including a portion of the nanostructure and the dopant, the hybrid material exhibiting a conductivity that is greater than a conductivity of the nanostructure, prior to doping via the fullerene-based dopant material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method for doping a carbon nanotube-based nanowire, the method comprising:
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applying a fullerene-based material to a carbon nanotube-based nanowire, the fullerene-based material including a material selected from the group of C60F18, C60F24, C60F36, C60F48, C60F44 and C70F54); nucleating the fullerene-based material to form a nucleated fullerene-based material on the carbon-based nanowire; and doping the carbon nanotube-based nanowire with the nucleated fullerene-based material. - View Dependent Claims (22, 23)
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24. A carbon nanotube-based nanowire circuit comprising:
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a semiconducting carbon nanotube-based nanomaterial coupled between circuit nodes; and a conductive hybrid material including a halogenated fullerene dopant and the carbon nanotube-based nanomaterial, the dopant configured to effect a charge transfer to the carbon nanotube-based nanomaterial, and configured to electrically couple the circuit nodes, the hybrid material exhibiting a conductivity that is higher than a conductivity of the carbon nanotube-based nanomaterial. - View Dependent Claims (25, 26, 27, 28)
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Specification