LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM
First Claim
Patent Images
1. A light emitting device comprising:
- a substrate;
a light-emitting structure layer on the substrate, the light-emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers; and
a light-transmitting electrode layer on the second conductive type semiconductor layer,wherein the second conductive type semiconductor layer has a thickness satisfying Equation (1);
2·
Φ
1+Φ
2=N·
2π
±
Δ
, (0≦
Δ
≦
π
/2)
(1)where Φ
1 is a phase change that is generated when light of a vertical direction passes through the second conductive type semiconductor layer, Φ
2 is a phase change that is generated when the light is reflected by the light-transmitting electrode layer, and N is a natural number.
2 Assignments
0 Petitions
Accused Products
Abstract
The light emitting device includes a substrate, a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a light-transmitting electrode layer. The second conductive type semiconductor layer has a thickness satisfying Equation: 2·Φ1+Φ2=N·2π±Δ, (0≦Δ≦π/2), where Φ1 is a phase change that is generated when light of a vertical direction passes through the second conductive type semiconductor layer, Φ2 is a phase change that is generated when the light is reflected by the light-transmitting electrode layer, and N is a natural number.
-
Citations
20 Claims
-
1. A light emitting device comprising:
-
a substrate; a light-emitting structure layer on the substrate, the light-emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers; and a light-transmitting electrode layer on the second conductive type semiconductor layer, wherein the second conductive type semiconductor layer has a thickness satisfying Equation (1);
2·
Φ
1+Φ
2=N·
2π
±
Δ
, (0≦
Δ
≦
π
/2)
(1)where Φ
1 is a phase change that is generated when light of a vertical direction passes through the second conductive type semiconductor layer, Φ
2 is a phase change that is generated when the light is reflected by the light-transmitting electrode layer, and N is a natural number. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A light emitting device comprising:
-
a light-transmitting substrate; a light-emitting structure layer on the light-transmitting substrate, the light-emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers; and a light-transmitting electrode layer on the second conductive type semiconductor layer, wherein the light-transmitting electrode layer transmits a portion of the incident light, and reflects the other portion of the incident light; the second conductive type semiconductor layer has a thickness satisfying Equation (1) to allow light reflected by the light-transmitting electrode layer and traveling to the light-transmitting substrate and light emitted from the active layer and traveling to the light-transmitting substrate to generate a constructive interference;
2·
Φ
1+Φ
2=N·
2π
±
Δ
, (0≦
Δ
≦
π
/2)
(1)where Φ
1 is a phase change that is generated when light of a vertical direction passes through the second conductive type semiconductor layer, Φ
2 is a phase change that is generated when the light is reflected by the light-transmitting electrode layer, and N is a natural number;the active layer has a thickness equal to or less than λ
/n1, where n1 is a refractive index of the active layer, and λ
is a wavelength of light emitted from the active layer; andthe light-transmitting substrate has a refractive index lower than a refractive index of the first conductive type semiconductor layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
-
-
20. A light emitting device package comprising:
-
a body; first and second lead electrodes on the body; a light emitting device on at least one of the first and second lead electrodes; and a molding member on the light emitting device, wherein the light emitting device comprises;
a substrate;
a light-emitting structure layer on the substrate, the light-emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers; and
a light-transmitting electrode layer on the second conductive type semiconductor layer, and the second conductive type semiconductor layer has a thickness satisfying Equation (1);
2·
Φ
1+Φ
2=N·
2π
±
Δ
, (0≦
Δ
≦
π
/2)
(1)where Φ
1 is a phase change that is generated when light of a vertical direction passes through the second conductive type semiconductor layer, Φ
2 is a phase change that is generated when the light is reflected by the light-transmitting electrode layer, and N is a natural number.
-
Specification