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NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES

  • US 20110204329A1
  • Filed: 05/03/2011
  • Published: 08/25/2011
  • Est. Priority Date: 04/15/2002
  • Status: Active Grant
First Claim
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1. A nitride semiconductor device, comprising one or more non-polar (Al, B, In, Ga)N quantum well layers containing Indium.

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