LAYERED STRUCTURES COMPRISING SILICON CARBIDE LAYERS, A PROCESS FOR THEIR MANUFACTURE AND THEIR USE

• US 20110204382A1
• Filed: 04/27/2009
• Published: 08/25/2011
• Est. Priority Date: 05/08/2008
• Status: Abandoned Application

• Current Assignee: BASF SE
• Original Assignee: BASF SE
• Inventors: Traut, Alexander, Shih, Chien Hsueh Steve, Wagner, Norbert
• Application Number:
  US12/989,661
• Publication Number:
  US 20110204382A1
• Time in Patent Office: Days
• US Class Current: 257/77
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/02529 Silicon carbide
• CPC Class Codes: H01L 21/3121 Layers comprising organo-silicon compounds
• CPC Class Codes: H01L 21/316 composed of oxides or glassy oxides or oxide based glass

Abstract

A layered structure comprising in this order: (A) a silicon carbide layer, (B) at least one stratum (b1) located at least one major surface of the silicon carbide layer (A), (b2) chemically bonded to the bulk of the silicon carbide layer (A) by silicon-oxygen and/or silicon-carbon bonds, (b3) covering the at least one major surface of the silicon carbide layer (A) partially or completely, and (b4) having a higher polarity than a pure silicon carbide surface as exemplified by a contact angle with water which is lower than the contact angle of water with a pure silicon carbide surface; and (C) at least one dielectric layer, which covers the stratum or the strata (B) partially or completely and is selected from inorganic and inorganic-organic hybrid dielectric layers; a process for its manufacture and its use.

Claims

1. A layered structure, comprising in this order

(A) a silicon carbide layer;

(B) at least one stratum

(b1) located on at least one major surface of the silicon carbide layer (A),

(b2) chemically bonded to a bulk of the silicon carbide layer (A) by silicon-oxygen and/or silicon-carbon bonds,

(b3) covering the at least one major surface of the silicon carbide layer (A) partially or completely,

(b4) having

a higher polarity than a pure silicon carbide surface as shown by a contact angle with water which is lower than the contact angle of water with a pure silicon carbide surface and

a contact angle with water equal to or greater than the contact angle of water with a pure silicon dioxide surface,

the contact angle being measured by dynamic sessile drop as a function of time with a contact angle goniometer with a high-speed camera; and

(C) at least one dielectric layer, which covers the at least one stratum partially or completely and is selected from the group consisting of an inorganic hybrid dielectric layer and an inorganic-organic hybrid dielectric layer.

2. The layered structure according to claim 1, wherein the at least one stratum (B) has a thickness of from 1 to 100 nm.

3. The layered structure according to claim 1, wherein the inorganic and/or the inorganic-organic hybrid dielectric layer (C) comprises siloxane bonds.

4. The layered structure according to claim 1, wherein at least one dielectric layer (C) has a dielectric constant k less than silicon dioxide.

5. The layered structure according to claim 1, wherein the at least one dielectric layer (C) has a thickness of from 10 to 500 nm.

14. An electronic device comprising the layered structure according to claim 1.

15. The device of claim 14, wherein the electronic device is a semiconductor device, and the silicon carbide layer (A) is a semiconductor material and/or an etch stop layer and/or a copper barrier layer and/or a protective layer in the semiconductor device.

16. An LED, IGFET, MOSFET, insulated gate bipolar transistor, Schottky diode, thyristor or integrated circuit comprising the layered structure of claim 1.

6. A process for manufacturing a layered structure, the layered structure comprising, in this order:

(A) a silicon carbide layer;

(B) at least one stratum

(b1) located on at least one major surface of the silicon carbide layer,

(b2) chemically bonded to a bulk of the silicon carbide layer by silicon-oxygen and/or a silicon-carbon bonds,

(b3) covering the at least one major surface of the silicon carbide layers partially or completely, and

(b4) having a higher polarity than a pure silicon carbide surface as shown by a contact angle with water which is lower than the contact angle of water with a pure silicon carbide surface, the contact angle being measured by dynamic sessile drop as a function of time with a contact angle goniometer with a high-speed camera; and

(C) at least one dielectric layer, which covers the at least one stratum partially or completely and is selected from the group consisting of an inorganic hybrid dielectric layer and an inorganic-organic hybrid dielectric layer,

the process comprising

(1) applying an organic solution comprising at least one organic solvent, a small amount of at least one acid and at least one silane selected from the group consisting of a silane of formula I;

R_nSiX_4-n 

 

(I),

and a silane of formula II;

R_mX_3-mSi—

R—

SiX_3-mR_m 

 

(II),

wherein

n is 1 or 2;

m is 0 or 1;

R is an organic moiety comprising at least two carbon atoms, selected from the group consisting of a substituted linear aliphatic group, a substituted branched aliphatic group, an unsubstituted linear aliphatic group, an unsubstituted branched aliphatic group, a substituted linear olefinically unsaturated group, a substituted branched olefinically unsaturated group, an unsubstituted linear olefinically unsaturated group, an unsubstituted branched olefinically unsaturated group, a substituted linear acetylenically unsaturated group, a substituted branched acetylenically unsaturated group, an unsubstituted linear acetylenically unsaturated group, an unsubstituted branched acetylenically unsaturated group, an alicyclic group, and an aromatic group; and

X is a hydrolyzable atom or hydrolyzable moiety,

to at least one major surface of the silicon carbide layer (A), to give a solution layer;

(2) drying the solution layer obtained in (1) by removing volatile components to give a dried layer;

(3) annealing the dried layer at temperatures between 150 to 400°

C. for 1 to 120 min in an oxygen comprising atmosphere to obtain the at least one stratum (B); and

(4) applying the at least one dielectric layer (C), so as to cover the at least one stratum (B) partially or completely

or, in the alternative,

(5) carrying out (4) directly after (1), and, thereafter, carrying out (2) and (3) during and/or after (4).

7. The process of claim 6, wherein the contact angle of the stratum (B) with water is equal to or greater than the contact angle of water with a pure silicon dioxide surface, and the contact angle is measured by dynamic sessile drop as a function of time with a contact angle goniometer with a high-speed camera.

8. The process of claim 6, wherein the organic solvent comprises at least one polar organic solvent.

9. The process of claim 6, wherein n=1 and m=0.

10. The process of claim 6, wherein the hydrolyzable atoms X are selected from the group consisting of hydrogen, chlorine, bromine, and iodine;

and

the hydrolyzable moieties X are represented by formula II;

—

Y—

R¹ 

 

(II),

wherein Y is a bifunctional linking group selected from the group consisting of —

O—

, —

S—

, —

C(O)—

, —

C(S)—

, —

O—

C(O)—

, —

S—

C(O)—

, —

O—

C(S)— and

—

NR¹—

, and

R¹ is selected from the group consisting of hydrogen, a substituted methyl group, an unsubstituted methyl group, and R.

11. The process according to claim 10, wherein X=—

O— and

R¹=methyl or ethyl.

12. The process of claim 6, wherein the at least one silane I is selected from the group consisting of ethyltrimethoxysilane, ethyltriethoxysilane, n-butyltrimethoxysilane, u-butyltriethoxysilane, 3-butyltrimethoxysilane, 3-butyltriethoxysilane, hexyltrimethoxysilane, hexyltriethoxysilane, octyltrimethoxysilane, octyltriethoxysilane, dodecyltrimethoxysilane, dodecyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, methacryloyloxypropyltrimethoxysilane, methacryloyloxypropyltriethoxysilane, aminopropyltrimethoxysilane, aminopropyltriethoxysilane, glycidoxypropyltrimethoxysilane, and glycidoxypropyltriethoxysilane.

13. The process according to claim 12, wherein the at least one silane I is at least one first silane I selected from the group consisting of octyltrimethoxysilane and octyltriethoxysilane, and at least one second silane I selected from the group consisting of hexyltrimethoxysilane, hexyltriethoxysilane, octyltrimethoxysilane, octyltriethoxysilane, dodecytrimethoxysilane, dodecytriethoxysilane, vinyltrimethoxysilane, and vinyltriethoxysilane.