LAYERED STRUCTURES COMPRISING SILICON CARBIDE LAYERS, A PROCESS FOR THEIR MANUFACTURE AND THEIR USE
First Claim
1. A layered structure, comprising in this order(A) a silicon carbide layer;
- (B) at least one stratum(b1) located on at least one major surface of the silicon carbide layer (A),(b2) chemically bonded to a bulk of the silicon carbide layer (A) by silicon-oxygen and/or silicon-carbon bonds,(b3) covering the at least one major surface of the silicon carbide layer (A) partially or completely,(b4) havinga higher polarity than a pure silicon carbide surface as shown by a contact angle with water which is lower than the contact angle of water with a pure silicon carbide surface anda contact angle with water equal to or greater than the contact angle of water with a pure silicon dioxide surface,the contact angle being measured by dynamic sessile drop as a function of time with a contact angle goniometer with a high-speed camera; and
(C) at least one dielectric layer, which covers the at least one stratum partially or completely and is selected from the group consisting of an inorganic hybrid dielectric layer and an inorganic-organic hybrid dielectric layer.
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Abstract
A layered structure comprising in this order: (A) a silicon carbide layer, (B) at least one stratum (b1) located at least one major surface of the silicon carbide layer (A), (b2) chemically bonded to the bulk of the silicon carbide layer (A) by silicon-oxygen and/or silicon-carbon bonds, (b3) covering the at least one major surface of the silicon carbide layer (A) partially or completely, and (b4) having a higher polarity than a pure silicon carbide surface as exemplified by a contact angle with water which is lower than the contact angle of water with a pure silicon carbide surface; and (C) at least one dielectric layer, which covers the stratum or the strata (B) partially or completely and is selected from inorganic and inorganic-organic hybrid dielectric layers; a process for its manufacture and its use.
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Citations
16 Claims
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1. A layered structure, comprising in this order
(A) a silicon carbide layer; -
(B) at least one stratum (b1) located on at least one major surface of the silicon carbide layer (A), (b2) chemically bonded to a bulk of the silicon carbide layer (A) by silicon-oxygen and/or silicon-carbon bonds, (b3) covering the at least one major surface of the silicon carbide layer (A) partially or completely, (b4) having a higher polarity than a pure silicon carbide surface as shown by a contact angle with water which is lower than the contact angle of water with a pure silicon carbide surface and a contact angle with water equal to or greater than the contact angle of water with a pure silicon dioxide surface, the contact angle being measured by dynamic sessile drop as a function of time with a contact angle goniometer with a high-speed camera; and (C) at least one dielectric layer, which covers the at least one stratum partially or completely and is selected from the group consisting of an inorganic hybrid dielectric layer and an inorganic-organic hybrid dielectric layer. - View Dependent Claims (2, 3, 4, 5, 14, 15, 16)
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6. A process for manufacturing a layered structure, the layered structure comprising, in this order:
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(A) a silicon carbide layer; (B) at least one stratum (b1) located on at least one major surface of the silicon carbide layer, (b2) chemically bonded to a bulk of the silicon carbide layer by silicon-oxygen and/or a silicon-carbon bonds, (b3) covering the at least one major surface of the silicon carbide layers partially or completely, and (b4) having a higher polarity than a pure silicon carbide surface as shown by a contact angle with water which is lower than the contact angle of water with a pure silicon carbide surface, the contact angle being measured by dynamic sessile drop as a function of time with a contact angle goniometer with a high-speed camera; and (C) at least one dielectric layer, which covers the at least one stratum partially or completely and is selected from the group consisting of an inorganic hybrid dielectric layer and an inorganic-organic hybrid dielectric layer, the process comprising (1) applying an organic solution comprising at least one organic solvent, a small amount of at least one acid and at least one silane selected from the group consisting of a silane of formula I;
RnSiX4-n
(I),and a silane of formula II;
RmX3-mSi—
R—
SiX3-mRm
(II),wherein n is 1 or 2; m is 0 or 1; R is an organic moiety comprising at least two carbon atoms, selected from the group consisting of a substituted linear aliphatic group, a substituted branched aliphatic group, an unsubstituted linear aliphatic group, an unsubstituted branched aliphatic group, a substituted linear olefinically unsaturated group, a substituted branched olefinically unsaturated group, an unsubstituted linear olefinically unsaturated group, an unsubstituted branched olefinically unsaturated group, a substituted linear acetylenically unsaturated group, a substituted branched acetylenically unsaturated group, an unsubstituted linear acetylenically unsaturated group, an unsubstituted branched acetylenically unsaturated group, an alicyclic group, and an aromatic group; and X is a hydrolyzable atom or hydrolyzable moiety, to at least one major surface of the silicon carbide layer (A), to give a solution layer; (2) drying the solution layer obtained in (1) by removing volatile components to give a dried layer; (3) annealing the dried layer at temperatures between 150 to 400°
C. for 1 to 120 min in an oxygen comprising atmosphere to obtain the at least one stratum (B); and(4) applying the at least one dielectric layer (C), so as to cover the at least one stratum (B) partially or completely or, in the alternative, (5) carrying out (4) directly after (1), and, thereafter, carrying out (2) and (3) during and/or after (4). - View Dependent Claims (7, 8, 9, 10, 11, 12, 13)
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Specification