Shielded gate trench (SGT) mosfet devices and manufacturing processes
First Claim
1. A semiconductor power device comprising a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate wherein:
- at least one of said cells constituting an active cell having a source region disposed next to a trenched gate electrically connecting to a gate pad and surrounding said cell wherein said trenched gate further having a bottom-shielding electrode filled with a gate material disposed below and insulated from said trenched gate wherein said bottom-shielding electrode filled with said gate material having a tapered profile toward a bottom of said trench with a lining layer surrounded said gate material having a correspondingly gradually increased thickness.
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Abstract
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one of the cells constituting an active cell has a source region disposed next to a trenched gate electrically connecting to a gate pad and surrounding the cell. The trenched gate further has a bottom-shielding electrode filled with a gate material disposed below and insulated from the trenched gate. At least one of the cells constituting a source-contacting cell surrounded by the trench with a portion functioning as a source connecting trench is filled with the gate material for electrically connecting between the bottom-shielding electrode and a source metal disposed directly on top of the source connecting trench. The semiconductor power device further includes an insulation protective layer disposed on top of the semiconductor power device having a plurality of source openings on top of the source region and the source connecting trench provided for electrically connecting to the source metal and at least a gate opening provided for electrically connecting the gate pad to the trenched gate.
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Citations
18 Claims
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1. A semiconductor power device comprising a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate wherein:
at least one of said cells constituting an active cell having a source region disposed next to a trenched gate electrically connecting to a gate pad and surrounding said cell wherein said trenched gate further having a bottom-shielding electrode filled with a gate material disposed below and insulated from said trenched gate wherein said bottom-shielding electrode filled with said gate material having a tapered profile toward a bottom of said trench with a lining layer surrounded said gate material having a correspondingly gradually increased thickness. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor power device comprising:
a trenched gate having a bottom-shielding electrode filled with a gate material disposed below and insulated from a trenched gate wherein said bottom-shielding electrode filled with said gate material having a tapered profile toward a bottom of said trench with a lining layer surrounded said gate material having a correspondingly gradually increased thickness.
Specification