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Shielded gate trench (SGT) mosfet devices and manufacturing processes

  • US 20110204440A1
  • Filed: 04/28/2011
  • Published: 08/25/2011
  • Est. Priority Date: 02/17/2006
  • Status: Active Grant
First Claim
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1. A semiconductor power device comprising a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate wherein:

  • at least one of said cells constituting an active cell having a source region disposed next to a trenched gate electrically connecting to a gate pad and surrounding said cell wherein said trenched gate further having a bottom-shielding electrode filled with a gate material disposed below and insulated from said trenched gate wherein said bottom-shielding electrode filled with said gate material having a tapered profile toward a bottom of said trench with a lining layer surrounded said gate material having a correspondingly gradually increased thickness.

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