DEMODULATION CIRCUIT AND RFID TAG INCLUDING THE DEMODULATION CIRCUIT

• US 20110204968A1
• Filed: 02/14/2011
• Published: 08/25/2011
• Est. Priority Date: 02/19/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: SHIONOIRI, Yutaka, MATSUZAKI, Takanori
• Granted Patent: US 8,258,862 B2
• Time in Patent Office: Days
• US Class Current: 327/566
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H03D 1/18 of semiconductor devices

Abstract

An object is to provide a demodulation circuit having a sufficient demodulation ability. Another object is to provide an RFID tag which uses a demodulation circuit having a sufficient demodulation ability. A material which enables a reverse current to be small enough, for example, an oxide semiconductor material, which is a wide bandgap semiconductor, is used in part of a transistor included in a demodulation circuit. By using the semiconductor material which enables a reverse current of a transistor to be small enough, a sufficient demodulation ability can be secured even when an electromagnetic wave having a high amplitude is received.

Claims

1. A demodulation circuit comprising:

a first transistor comprising a channel formation region including an oxide semiconductor;

a second transistor comprising a channel formation region including an oxide semiconductor;

a first capacitor;

a second capacitor;

a third capacitor;

a first resistor; and

a second resistor,

wherein a gate terminal of the first transistor, a drain terminal of the first transistor, a source terminal of the second transistor, and one terminal of the first capacitor are electrically connected to each other,

wherein a gate terminal of the second transistor, a drain terminal of the second transistor, one terminal of the second capacitor, one terminal of the third capacitor, and one terminal of the first resistor are electrically connected to each other,

wherein a source terminal of the first transistor, the other terminal of the second capacitor, the other terminal of the first resistor, and one terminal of the second resistor are electrically connected to each other, and

wherein the other terminal of the third capacitor and the other terminal of the second resistor are electrically connected to each other.

2. The demodulation circuit according to claim 1,

wherein a reference potential is supplied to a node which is electrically connected to the gate terminal of the second transistor, the drain terminal of the second transistor, the one terminal of the second capacitor, the one terminal of the third capacitor, and the one terminal of the first resistor.

3. An RFID tag comprising the demodulation circuit according to claim 1.

4. A demodulation circuit comprising:

a first transistor comprising a channel formation region including an oxide semiconductor;

a second transistor comprising a channel formation region including an oxide semiconductor;

a first capacitor;

a second capacitor;

a third capacitor;

a first resistor; and

a second resistor,

wherein a gate terminal of the second transistor, a drain terminal of the second transistor, a source terminal of the first transistor, and one terminal of the first capacitor are electrically connected to each other,

wherein a source terminal of the second transistor, one terminal of the second capacitor, one terminal of the third capacitor, and one terminal of the first resistor are electrically connected to each other,

wherein a gate terminal of the first transistor, a drain terminal of the first transistor, the other terminal of the second capacitor, the other terminal of the first resistor, and one terminal of the second resistor are electrically connected to each other, and

wherein the other terminal of the third capacitor and the other terminal of the second resistor are electrically connected to each other.

5. The demodulation circuit according to claim 4,

wherein a reference potential is supplied to a node which is electrically connected to the source terminal of the second transistor, the one terminal of the second capacitor, the one terminal of the third capacitor, and the one terminal of the first resistor.

6. An RFID tag comprising the demodulation circuit according to claim 4.

7. A demodulation circuit comprising:

a first transistor comprising a semiconductor material with an energy gap of larger than 3 eV;

a second transistor comprising a semiconductor material with an energy gap of larger than 3 eV;

a first capacitor;

a second capacitor;

a third capacitor;

a first resistor; and

a second resistor,

wherein a gate terminal of the first transistor, a drain terminal of the first transistor, a source terminal of the second transistor, and one terminal of the first capacitor are electrically connected to each other,

wherein a gate terminal of the second transistor, a drain terminal of the second transistor, one terminal of the second capacitor, one terminal of the third capacitor, and one terminal of the first resistor are electrically connected to each other,

wherein a source terminal of the first transistor, the other terminal of the second capacitor, the other terminal of the first resistor, and one terminal of the second resistor are electrically connected to each other, and

wherein the other terminal of the third capacitor and the other terminal of the second resistor are electrically connected to each other.

8. The demodulation circuit according to claim 7,

wherein a reference potential is supplied to a node which is electrically connected to the gate terminal of the second transistor, the drain terminal of the second transistor, the one terminal of the second capacitor, the one terminal of the third capacitor, and the one terminal of the first resistor.

9. An RFID tag comprising the demodulation circuit according to claim 7.

10. A demodulation circuit comprising:

a first transistor comprising a semiconductor material with an energy gap of larger than 3 eV;

a second transistor comprising a semiconductor material with an energy gap of larger than 3 eV;

a first capacitor;

a second capacitor;

a third capacitor;

a first resistor; and

a second resistor,

wherein a gate terminal of the second transistor, a drain terminal of the second transistor, a source terminal of the first transistor, and one terminal of the first capacitor are electrically connected to each other,

wherein a source terminal of the second transistor, one terminal of the second capacitor, one terminal of the third capacitor, and one terminal of the first resistor are electrically connected to each other,

wherein a gate terminal of the first transistor, a drain terminal of the first transistor, the other terminal of the second capacitor, the other terminal of the first resistor, and one terminal of the second resistor are electrically connected to each other, and

wherein the other terminal of the third capacitor and the other terminal of the second resistor are electrically connected to each other.

11. The demodulation circuit according to claim 10,

wherein a reference potential is supplied to a node which is electrically connected to the source terminal of the second transistor, the one terminal of the second capacitor, the one terminal of the third capacitor, and the one terminal of the first resistor.

12. An RFID tag comprising the demodulation circuit according to claim 10.