TRANSISTOR AND MANUFACTURING METHOD OF THE SAME
First Claim
1. A method of manufacturing a transistor, the method comprising:
- forming a first wiring layer;
forming a first insulating film to cover the first wiring layer;
forming a semiconductor layer over the first insulating film;
forming a conductive film over the semiconductor layer; and
patterning the conductive film to form second wiring layers which are apart from each other by at least a first etching process and a second etching process after the first etching process,wherein the first etching process is performed in a first condition that a first etching rate for the conductive film is higher than a second etching rate for the semiconductor layer, andwherein the second etching process is performed in a second condition that a third etching rate for the conductive film is higher than the first etching rate, and a fourth etching rate for the semiconductor layer is higher than the second etching rate.
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Accused Products
Abstract
A transistor is manufactured by a method including: forming a first wiring layer; forming a first insulating film to cover the first wiring layer; forming a semiconductor layer over the first insulating film; forming a conductive film over the semiconductor layer; and performing at least two steps of etching on the conductive film to form second wiring layers which are apart from each other, wherein the two steps of etching include at least a first etching process performed under the condition that the etching rate for the conductive film is higher than the etching rate for the semiconductor layer, and a second etching process performed under the condition that the etching rates for the conductive film and the semiconductor layer are higher than those of the first etching process.
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Citations
24 Claims
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1. A method of manufacturing a transistor, the method comprising:
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forming a first wiring layer; forming a first insulating film to cover the first wiring layer; forming a semiconductor layer over the first insulating film; forming a conductive film over the semiconductor layer; and patterning the conductive film to form second wiring layers which are apart from each other by at least a first etching process and a second etching process after the first etching process, wherein the first etching process is performed in a first condition that a first etching rate for the conductive film is higher than a second etching rate for the semiconductor layer, and wherein the second etching process is performed in a second condition that a third etching rate for the conductive film is higher than the first etching rate, and a fourth etching rate for the semiconductor layer is higher than the second etching rate. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of manufacturing a transistor, the method comprising:
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forming a first wiring layer; forming a first insulating film to cover the first wiring layer; forming a conductive film over the first insulating film; patterning the conductive film to form second wiring layers which are apart from each other by at least a first etching process and a second etching process; and forming a semiconductor layer over the first insulating film and the second wiring layers, wherein the first etching process is performed in a first condition that a first etching rate for the conductive film is higher than a second etching rate for the first insulating film, and wherein the second etching process is performed in a second condition that a third etching rate for the conductive film is higher than the first etching rate, and a fourth etching rate for the first insulating film is higher than the second etching rate. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method of manufacturing a transistor, the method comprising:
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forming a semiconductor layer; forming a conductive film over the semiconductor layer; patterning the conductive film to form first wiring layers which are apart from each other by at least a first etching process and a second etching process; forming an insulating layer to cover the first wiring layers and the semiconductor layer; and forming a second wiring layer over the insulating layer to overlap with the semiconductor layer, wherein the first etching process is performed in a first condition that a first etching rate for the conductive film is higher than a second etching rate for the semiconductor layer, and wherein the second etching process is performed in a second condition that a third etching rate for the conductive film is higher than the first etching rate, and a fourth etching rate for the semiconductor layer is higher than the second etching rate. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A method of manufacturing a transistor, the method comprising:
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forming a base insulating film; forming a conductive film over the base insulating film; patterning the conductive film to form first wiring layers which are apart from each other by at least a first etching process and a second etching process; forming a semiconductor layer over the base insulating film and the first wiring layers; forming an insulating layer to cover the base insulating film, the semiconductor layer and the first wiring layers; and forming a second wiring layer over the insulating layer to overlap with the semiconductor layer, wherein the first etching process is performed in a first condition that a first etching rate for the conductive film is higher than a second etching rate for the base insulating film, and wherein the second etching process is performed in a second condition that a third etching rate for the conductive film is higher than the first etching rate, and a fourth etching rate for the base insulating film is higher than the second etching rate. - View Dependent Claims (20, 21, 22, 23, 24)
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Specification