THIN FILM COATED PROCESS KITS FOR SEMICONDUCTOR MANUFACTURING TOOLS
First Claim
1. A semiconductor manufacturing apparatus comprising a plasma processing chamber including therein a process kit formed of quartz and having a Y2O3 coating on exposed surfaces thereof.
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Accused Products
Abstract
A plasma processing apparatus used in semiconductor device manufacturing includes a process kit formed of insulating materials such as quartz and coated with a Y2O3 coating. The Y2O3 coating is a thin film formed using suitable CVD or PVD operations. The Y2O3 coating is resistant to degradation in fluorine etching chemistries commonly used to etch silicon in semiconductor manufacturing. The plasma processing apparatus may be used in etching, stripping and cleaning operations. Also provided in another embodiment is a plasma processing apparatus having a quartz process kit coated with a sapphire-like film.
348 Citations
20 Claims
- 1. A semiconductor manufacturing apparatus comprising a plasma processing chamber including therein a process kit formed of quartz and having a Y2O3 coating on exposed surfaces thereof.
- 9. A semiconductor manufacturing apparatus comprising a plasma etching chamber including therein a process kit including quartz components and having a coating on exposed surfaces of said quartz components, said coating being a yttria coating or a sapphire-like coating.
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12. A method for manufacturing a semiconductor processing apparatus, said method comprising:
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providing a plasma processing chamber; providing a quartz process kit within said plasma processing chamber; and forming a Y2O3 coating on exposed surfaces of said quartz process kit. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification