III-NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

• US 20110210312A1
• Filed: 05/13/2011
• Published: 09/01/2011
• Est. Priority Date: 11/14/2007
• Status: Abandoned Application

• Current Assignee: Advanced Optoelectronic Technology, Inc.
• Original Assignee: Advanced Optoelectronic Technology, Inc.
• Inventors: Tu, Po Min, Lin, Wen Yu, Yeh, Ying Chao, Hsu, Chih Peng, Wu, Peng Yi, Chan, Shih Hsiung, Huang, Shih Cheng
• Application Number:
  US13/106,872
• Publication Number:
  US 20110210312A1
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A semiconductor light-emitting device includes a substrate, a buffer layer, an n-type semiconductor layer, a conformational active layer and a p-type semiconductor layer. The n-type semiconductor layer includes a first surface and a second surface, and the first surface directly contacts the buffer layer. The second surface includes a plurality of recesses, and a conformational active layer formed on the second surface and within the plurality of recesses. Widths of upper portions of the recesses are larger than widths of lower portions of the recesses. Therefore, the stress between the n-type semiconductor layer and the conformational active layer can be released with the recesses.

Claims

1. A III-nitride semiconductor light-emitting device, comprising:

a substrate;

a first type semiconductor layer comprising a first surface and a second surface wherein the first surface is disposed adjacent to the substrate and opposite to the second surface, and the second surface comprises a plurality of recesses;

a conformational active layer formed on the second surface and within the plurality of recesses; and

a second type semiconductor layer formed on the conformational active layer,

wherein widths of upper portions of the recesses are larger than widths of lower portions of the recesses.

2. The III-nitride semiconductor light-emitting device as claimed in claim 1, further comprising a buffer layer disposed between the substrate and the first type semiconductor layer.

3. The III-nitride semiconductor light-emitting device as claimed in claim 1, wherein the material of the substrate is sapphire, SiC, Si, ZnO, MgO or GaAs.

4. The III-nitride semiconductor light-emitting device as claimed in claim 1, wherein depths of the accesses are larger than a depth of a single quantum well in the active layer, and smaller than the depth of the first type semiconductor layer.

5. The III-nitride semiconductor light-emitting device as claimed in claim 1, wherein widths of upper portions of the recesses range from 0.1 um to 10 um.

6. The III-nitride semiconductor light-emitting device as claimed in claim 1, wherein the plurality of recesses have different sizes, and the distribution of the plurality of recesses is substantially uniform or non-uniform.

7. The III-nitride semiconductor light-emitting device as claimed in claim 1, wherein the conformational active layer is a single quantum well structure or a multiple quantum well structure.

8. The III-nitride semiconductor light-emitting device as claimed in claim 7, wherein the multiple quantum well structure includes two to thirty light-emitting layers and barrier layers, wherein the materials of the light-emitting layers and the barrier layers are InGaN and GaN.

9. The III-nitride semiconductor light-emitting device as claimed in claim 7, wherein the multiple quantum well structure includes two to thirty light-emitting layers and barrier layers, wherein the light-emitting layers are made of Al.sub.xIn.sub.YGa.sub.1-X-YN, and the barrier layers are made of Al.sub.IIn.sub.JGa.sub.1I-JN, wherein 0.1toreq.X<

1, 0.1toreq.Y<

1, X+Y<

1, 0.1toreq.I<

1, 0.1toreq.J<

1, I+J<

1, and when X, Y, I, J>

0, X.noteq.I and Y.noteq.J.

10. The III-nitride semiconductor light-emitting device as claimed in claim 1, wherein the first type semiconductor layer is an n-type III-nitride semiconductor layer, and the second type semiconductor layer is a p-type semiconductor layer.

11. The III-nitride semiconductor light-emitting device as claimed in claim 1, wherein the first type semiconductor layer is an n-type Si-doped GaN layer, and the second type semiconductor layer is formed as Mg-doped GaN and InGaN multi-layers, or a superlattice structure of Mg-doped AlGaN/GaN and a Mg-doped GaN layer.

12. The III-nitride semiconductor light-emitting device as claimed in claim 1, further comprising a first type electrode and a second type electrode, wherein the first type electrode is disposed on the first type semiconductor layer, and the second type electrode is disposed on the second type semiconductor layer.