SEMICONDUCTOR DEVICE

• US 20110210339A1
• Filed: 02/24/2011
• Published: 09/01/2011
• Est. Priority Date: 02/26/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kato, Kiyoshi, Koyama, Jun, Yamazaki, Shunpei
• Granted Patent: US 9,613,964 B2
• Time in Patent Office: Days
• US Class Current: 257/77
• CPC Class Codes: G11C 11/24 using capacitors G11C11/22 takes precedence; using a combination of semiconductor devices and capacitors G11C11/34, e.g. G11C11/40
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H10B 12/00 Dynamic random access memory [DRAM] devices
• CPC Class Codes: H10B 12/31 having a storage electrode stacked over the transistor
• CPC Class Codes: H10B 41/70 the floating gate being an electrode shared by two or more components

Abstract

A semiconductor device including a non-volatile memory cell including a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor is provided. Data is written or rewritten to the memory cell by turning on the writing transistor and supplying a potential to a node where a source electrode (or a drain electrode) of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected to each other, and then turning off the writing transistor so that the predetermined amount of charge is held in the node. Further, when a transistor whose threshold voltage is controlled and set to a positive voltage is used as the reading transistor, a reading potential is a positive potential.

Claims

1. A semiconductor device comprising:

a source line;

a bit line;

a first signal line;

a second signal line;

a word line; and

a memory cell connected between the source line and the bit line,

wherein the memory cell comprises;

a first transistor comprising a first gate electrode, a first source electrode, a first drain electrode, and a first channel formation region;

a second transistor comprising a second gate electrode, a second source electrode, a second drain electrode, and a second channel formation region; and

a capacitor,

wherein the first channel formation region includes a semiconductor material different from a semiconductor material of the second channel formation region and an impurity element imparting a conductivity type is added to the first channel formation region so that a threshold voltage of the first transistor is positive,

wherein the first gate electrode, the second drain electrode, and one of electrodes of the capacitor are electrically connected to each other to form a node for holding charge,

wherein the source line is electrically connected to the first source electrode,

wherein the bit line is electrically connected to the first drain electrode,

wherein the first signal line is electrically connected to the second source electrode,

wherein the second signal line is electrically connected to the second gate electrode, and

wherein the word line is electrically connected to the other of the electrodes of the capacitor.

2. The semiconductor device according to claim 1, wherein one of a plurality of kinds of charges for controlling conductance of the first transistor is supplied to the node.

3. The semiconductor device according to claim 1, wherein when a potential of 0 V is supplied to the word line, the threshold voltage of the first transistor is a voltage at which the first transistor is turned off regardless of the charge held in the node.

4. The semiconductor device according to claim 1, wherein the second channel formation region includes an oxide semiconductor.

5. The semiconductor device according to claim 1,

wherein the first channel formation region includes silicon, and

wherein at least one of boron, aluminum, and gallium is added as the impurity element.

6. A semiconductor device comprising:

a memory cell comprising;

a first transistor comprising a first gate electrode, a first source electrode, a first drain electrode, and a first channel formation region wherein the first transistor has a positive threshold voltage;

a second transistor comprising a second gate electrode, a second source electrode, a second drain electrode, and a second channel formation region wherein the second channel formation region has a different semiconductor material from the first channel formation region and has an energy gap of greater than 3 eV; and

a capacitor including a first electrode and a second electrode,

a source line electrically connected to the first source electrode;

a bit line electrically connected to the first drain electrode,

a first signal line electrically connected to the second source electrode,

a second signal line electrically connected to the second gate electrode, and

a word line electrically connected to the first electrode of the capacitor,

wherein the first gate electrode, the second drain electrode and the second electrode of the capacitor are electrically connected to each other to form a node for holding charge.

7. The semiconductor device according to claim 6 wherein the first channel formation region is formed in a silicon substrate.

8. The semiconductor device according to claim 6 wherein the first channel formation region is formed in an SOI substrate.

9. The semiconductor device according to claim 6 wherein the second channel formation region comprises an oxide semiconductor.

10. The semiconductor device according to claim 6 wherein the second channel formation region comprises silicon carbide.

11. The semiconductor device according to claim 6 further comprising a driver circuit operationally connected to at least the bit line to read data of the memory cell.

12. The semiconductor device according to claim 6, wherein the first channel formation region includes silicon, and at least one of boron, aluminum, and gallium.

13. A semiconductor device comprising:

a memory cell comprising;

a first transistor comprising a first gate electrode, a first source electrode, a first drain electrode, and a first channel formation region wherein the first transistor has a positive threshold voltage;

an insulating layer formed over at least a part of the first transistor;

a second transistor over the insulating layer, the second transistor comprising a second gate electrode, a second source electrode, a second drain electrode, and a second channel formation region wherein the second channel formation region has a different semiconductor material from the first channel formation region and has a band gap of greater than 3 eV, and wherein one of the second source electrode is in contact with an upper surface of the first gate electrode,

wherein the first gate electrode and the second drain electrode are electrically connected to each other to form a node for holding charge.

14. The semiconductor device according to claim 13 further comprising a capacitor formed over the insulating layer, the capacitor including a first electrode and a second electrode, wherein the first electrode is electrically connected to the first gate electrode and the second drain electrode to form the node.

15. The semiconductor device according to claim 13 wherein the first channel formation region is formed in a silicon substrate.

16. The semiconductor device according to claim 13 wherein the first channel formation region is formed in an SOI substrate.

17. The semiconductor device according to claim 13 wherein the second channel formation region comprises an oxide semiconductor.

18. The semiconductor device according to claim 13,

wherein the first channel formation region includes silicon, and at least one of boron, aluminum, and gallium.

19. The semiconductor device according to claim 14 wherein the capacitor further includes a second insulating layer formed from a same layer as a gate insulating layer of the second transistor, the second insulating layer interposed between the first electrode and the second electrode.

20. The semiconductor device according to claim 14 wherein the capacitor further includes a second insulating layer formed from a same layer as a gate insulating layer of the second transistor, the second insulating layer interposed between the first electrode and the second electrode and comprising hafnium oxide.

21. The semiconductor device according to claim 13, wherein the second channel formation region comprises silicon carbide.

22. The semiconductor device according to claim 13 wherein the memory cell is non-volatile.

23. A driving method of a semiconductor device comprising a plurality of memory cells, each comprising:

a first transistor comprising a first gate electrode, a first source electrode, a first drain electrode, and a first channel formation region wherein the first transistor has a positive threshold voltage;

a second transistor comprising a second gate electrode, a second source electrode, a second drain electrode, and a second channel formation region wherein the second channel formation region has a different semiconductor material from the first channel formation region; and

a capacitor including a first electrode and a second electrode,

a source line electrically connected to the first source electrode;

a bit line electrically connected to the first drain electrode,

a first signal line electrically connected to the second source electrode,

a second signal line electrically connected to the second gate electrode, and

a word line electrically connected to the first electrode of the capacitor,

wherein the first gate electrode, the second drain electrode and the second electrode of the capacitor are electrically connected to each other to form a node for holding charge, the driving method comprising;

applying a positive voltage to one of the word lines for reading data of the memory cells associated with the one of the word lines during a first period; and

applying a zero voltage to remainder of the word lines during the first period.