STRUCTURES OF AND METHODS OF FABRICATING SPLIT GATE MIS DEVICES
First Claim
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1. A split gate field effect transistor device, comprising:
- a split gate structure having a trench, a gate electrode and a source electrode;
first poly layer a disposed within the trench connected to the source electrode;
a second poly layer connected to the gate electrode, wherein the first poly layer and the second poly layer are independent.
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Abstract
A split gate field effect transistor device. The device includes a split gate structure having a trench, a gate electrode and a source electrode. A first poly layer is disposed within the trench and is connected to the gate electrode. A second poly layer connected to the source electrode, wherein the first poly layer and the second poly layer are independent.
15 Citations
15 Claims
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1. A split gate field effect transistor device, comprising:
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a split gate structure having a trench, a gate electrode and a source electrode; first poly layer a disposed within the trench connected to the source electrode; a second poly layer connected to the gate electrode, wherein the first poly layer and the second poly layer are independent. - View Dependent Claims (2, 3, 4, 5)
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6. A CMP compatible split gate field effect transistor device, comprising:
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a split gate structure having a trench, a gate electrode and a source electrode; first poly layer a disposed within the trench connected to the source electrode; a second poly layer disposed within the trench connected to the gate electrode, wherein the first poly layer and the second poly layer are independent; and a metal layer disposed over the split gate structure. - View Dependent Claims (7, 8, 9, 10)
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11. A planar split gate field effect transistor device, comprising:
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a split gate structure having a trench, a gate electrode and a source electrode; a first poly layer a disposed within the trench and connected to the source electrode; a second poly layer is disposed within the trench and connected to the gate electrode, wherein the first poly layer and the second poly layer are independent, and wherein the first poly layer and the second poly layer are both disposed within the trench substantially in their entirety. - View Dependent Claims (12, 13, 14, 15)
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Specification