METHOD OF FORMING A PATTERNED LAYER OF A MATERIAL ON A SUBSTRATE

• US 20110210468A1
• Filed: 01/27/2011
• Published: 09/01/2011
• Est. Priority Date: 01/27/2010
• Status: Active Grant

• Current Assignee: Board of Trustees of The University of Illinois
• Original Assignee: Board of Trustees of The University of Illinois
• Inventors: Shannon, Mark A., Yeom, Junghoon
• Granted Patent: US 8,480,942 B2
• Time in Patent Office: Days
• US Class Current: 264/139
• CPC Class Codes: B32B 38/10 Removing layers, or parts of layers, mechanically or chemically
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

Abstract

A method of forming a patterned layer of a material on a substrate includes forming a layer of the material on a stamp, and contacting the stamp with a first substrate comprising a pattern of protruding and recessed features to bring a first portion of the layer into conformal contact with the protruding features. The stamp is then removed from the first substrate. The first portion of the layer remains in conformal contact with the protruding features, and a second portion of the layer opposite the recessed features is removed with the stamp. Accordingly, a patterned layer is formed on the stamp inverse to the pattern on the first substrate. The method may further include transferring the patterned layer on the stamp to a second substrate.

Claims

1. A method of forming a patterned layer of a material on a substrate, the method comprising:

forming a layer of a material on a stamp;

contacting the stamp with a first substrate comprising a pattern of protruding and recessed features to bring a first portion of the layer into conformal contact with the protruding features;

removing the stamp from the first substrate, the first portion of the layer remaining in conformal contact with the protruding features and a second portion of the layer opposite the recessed features being removed with the stamp, thereby forming a patterned layer on the stamp inverse to the pattern on the first substrate.

2. The method of claim 1, wherein removing the stamp comprises peeling the stamp from the first substrate, the stamp being a compliant stamp.

3. The method of claim 1, wherein removing the stamp comprises peeling the first substrate from the stamp, the first substrate being a compliant first substrate.

4. The method of claim 1, further comprising transferring at least a portion of the patterned layer on the stamp to a second substrate.

5. The method of claim 4, wherein transferring at least the portion of the patterned layer to the second substrate comprises contacting the patterned layer with the second substrate and causing relative motion between the stamp and the second substrate at a transfer rate of from about 0.01 cm/s to about 1 cm/s.

6. The method of claim 5, wherein causing relative motion between the stamp and the second substrate comprises peeling the stamp from the second substrate.

7. The method of claim 5, wherein causing relative motion between the stamp and the second substrate comprises moving the second substrate over the stamp.

8. The method of claim 4, wherein the second substrate comprises a curved surface.

9. The method of claim 4, further comprising heating the second substrate to a temperature ranging from about 40°

C. to about 110°

C. prior to transferring at least the portion of the patterned layer to the second substrate.

10. The method of claim 4, wherein the second substrate comprises a pattern of protruding and recessed features, and wherein transferring at least the portion of the patterned layer on the stamp to the second substrate comprises:

contacting the stamp with the second substrate to bring a first portion of the patterned layer into conformal contact with the protruding features of the second substrate; and

removing the stamp from the second substrate, the first portion of the patterned layer remaining in conformal contact with the protruding features and a second portion of the patterned layer opposite the recessed features being removed with the stamp.

11. The method of claim 4, further comprising, after transferring at least the portion of the patterned layer on the stamp to the second substrate, contacting the portion of the patterned layer with a cover layer, thereby sandwiching the patterned layer between the cover layer and the second substrate, and processing the patterned layer to bond the cover layer to the second substrate and create channels on the second substrate having walls defined by the portion of the patterned layer.

12. The method of claim 1, wherein the removal of the stamp from the first substrate is carried out at a removal rate ranging from about 0.1 cm/s to about 50 cm/s.

13. The method of claim 1, further comprising, after removing the stamp from the first substrate:

patterning the first portion of the layer in conformal contact with the protruding features to form an etch mask on the first substrate; and

creating multilevel features in the first substrate.

14. The method of claim 1, wherein the stamp is contacted with the first substrate in a vacuum environment.

15. The method of claim 1, further comprising heating the first substrate during the contacting of the stamp with the first substrate.

16. The method of claim 15, wherein the first substrate is heated at a temperature in the range of from about 40°

C. to about 110°

C.

17. The method of claim 1, further comprising, prior to removing the stamp from the first substrate, cooling the first substrate.

18. The method of claim 17, wherein the first substrate is cooled to a temperature in the range of from about −

4°

C. to about 60°

C.

19. The method of claim 1, wherein the pattern of protruding and recessed features comprises an array of substantially parallel linear features and the removing of the stamp comprises peeling the stamp in a direction nonparallel to the linear features.

20. The method of claim 19, wherein the direction of the peeling is substantially perpendicular to the linear features.

21. The method of claim 1, further comprising, prior to contacting the stamp with the first substrate, increasing the hydrophilicity of the first substrate.

22. The method of claim 21, wherein increasing the hydrophilicity of the first substrate comprises exposing the first substrate to one of an oxygen plasma and piranha solution.

23. The method of claim 1, wherein the protruding and recessed features have a spacing of from about 3 microns to about 1,000 microns.

24. The method of claim 1, wherein the protruding and recessed features have a feature size of from about 3 microns to about 1,000 microns in at least one lateral dimension.

25. The method of claim 1, wherein the layer comprises a thickness of at least about 100 nm.

26. The method of claim 1, wherein the stamp comprises a thickness of at least about 0.1 mm.

27. The method of claim 1, wherein the material comprises a functional polymer.

28. The method of claim 27, wherein the functional polymer is selected from the group consisting of a photoresist, an epoxy, and an adhesive.

29. A method of forming a structure on a substrate, the method comprising:

forming a first layer comprising a photosensitive polymer on a stamp;

contacting the stamp with a substrate comprising a pattern of protruding and recessed features, thereby bringing a portion of the first layer into conformal contact with the protruding features of the substrate;

transferring an entirety of the first layer to the substrate, the stamp being removed from the substrate; and

removing material from the first layer, thereby forming a first patterned layer comprising the photosensitive polymer on the pattern of protruding and recessed features.

30. The method of claim 29, wherein at least a portion of the first patterned layer overlies one or more of the protruding features of the substrate, thereby creating one or more multilayered structures.

31. The method of claim 29, wherein at least a portion of the first patterned layer overlies one or more of the recessed features of the substrate, thereby creating one or more partially unsupported structures.

32. The method of claim 29, wherein the recessed features of the substrate comprise pores and the protruding features of the substrate comprise material surrounding the pores, the substrate being a porous substrate.

33. The method of claim 29, wherein removing material from the first layer comprises photolithographically patterning the first layer.