ELECTROCONDUCTIVE LAMINATE AND PROTECTIVE PLATE FOR PLASMA DISPLAY

• US 20110212336A1
• Filed: 05/09/2011
• Published: 09/01/2011
• Est. Priority Date: 11/11/2008
• Status: Abandoned Application

• Current Assignee: Asahi Glass Company, Limited (AGC, Inc.)
• Original Assignee: Asahi Glass Company, Limited (AGC, Inc.)
• Inventors: Maeshige, Kazunobu, KAWAMOTO, Yasushi, Mashimo, Takahiro, Shidoji, Eiji
• Application Number:
  US13/103,379
• Publication Number:
  US 20110212336A1
• Time in Patent Office: Days
• US Class Current: 428/469
• CPC Class Codes: H05K 9/0096 for television displays, e.g. plasma display panel

Abstract

To provide an electroconductive laminate which has an excellent electrical conductivity (electromagnetic wave shielding properties) and a high visible light transmittance and is excellent in productivity, and a protective plate for a plasma display which has excellent electromagnetic wave shielding properties and a broad transmission/reflection band and is excellent in productivity.

An electroconductive laminate comprising a substrate and an electroconductive film formed on the substrate, wherein the electroconductive film has laminated n lamination units (wherein n is an integer of from 1 to 6) each having a first metal oxide layer, a second metal oxide layer and a metal layer arranged in this order from the substrate side, and further has a first metal oxide layer disposed as the outermost layer of the electroconductive film; the first metal oxide layer is an oxide layer containing titanium element and an M element, wherein the M element is at least one element selected from the group consisting of elements having atomic weights of at least 80, and the amount of the M element is from 10 to 60 atom % in the total amount of titanium element and the M element in the first metal oxide layer; the second metal oxide layer is a layer having, as its main component, an oxide containing zinc element; the metal layer is a layer having silver as its main component; and the second metal oxide layer and the metal layer in the lamination unit are directly in contact with each other.

Claims

1. An electroconductive laminate comprising a substrate and an electroconductive film formed on the substrate, wherein the electroconductive film has laminated n lamination units (wherein n is an integer of from 1 to 6) each having a first metal oxide layer, a second metal oxide layer and a metal layer arranged in this order from the substrate side, and further has a first metal oxide layer disposed as the outermost layer of the electroconductive film;

the first metal oxide layer is an oxide layer containing titanium element and an M element, wherein the M element is at least one element selected from the group consisting of elements having atomic weights of at least 80, and the amount of the M element is from 10 to 60 atom % in the total amount of titanium element and the M element in the first metal oxide layer;

the second metal oxide layer is a layer having, as its main component, an oxide containing zinc element;

the metal layer is a layer having silver as its main component; and

the second metal oxide layer and the metal layer in the lamination unit are directly in contact with each other.

3. The electroconductive laminate according to claim 1, wherein the lamination unit further has a third metal oxide layer on the surface of the metal layer at the side opposite to the substrate, and the third metal oxide layer is a layer having, as its main component, an oxide containing zinc element.

5. A protective plate for a plasma display, comprising a supporting substrate and an electroconductive laminate as defined in claim 1, provided on the supporting substrate.

2. An electroconductive laminate comprising a substrate and an electroconductive film formed on the substrate, wherein the electroconductive film has laminated n lamination units (wherein n is an integer of from 1 to 6) each having a first metal oxide layer, a second metal oxide layer and a metal layer arranged in this order from the substrate side, and further has a first metal oxide layer disposed as the outermost layer of the electroconductive film;

the first metal oxide layer is an oxide layer containing titanium element and an M element, wherein the M element is niobium element, tantalum element, zirconium element or hafnium element, and the amount of the M element is from 10 to 60 atom % in the total amount of titanium element and the M element in the first metal oxide layer;

the second metal oxide layer is a layer having, as its main component, an oxide containing zinc element;

the metal layer is a layer having silver as its main component; and

the second metal oxide layer and the metal layer in the lamination unit are directly in contact with each other.

4. The electroconductive laminate according to claim 2, wherein the M element is zirconium element.

6. A process for producing an electroconductive laminate, which comprises repeating the following steps (1) to (3) n times (wherein n is an integer of from 1 to 6);

and then forming a first metal oxide layer as the outermost layer by carrying out the following step (1);

(1) a step of forming a first metal oxide layer on one surface of a substrate by a sputtering method using a target containing titanium element and an M element (wherein the M element is at least one element selected from the group consisting of elements having atomic weights of at least

     80);

(2) a step of forming a second metal oxide layer by a sputtering method using a target containing zinc element;

(3) a step of forming a metal layer by a sputtering method using a target containing silver as its main component.

7. A process for producing an electroconductive laminate, which comprises repeating the following steps (1) to (4) n times (wherein n is an integer of from 1 to 6);

and then forming a first metal oxide layer as the outermost layer by carrying out the following step (1);

(1) a step of forming a first metal oxide layer on one surface of a substrate by a sputtering method using a target containing titanium element and an M element (wherein the M element is at least one element selected from the group consisting of elements having atomic weights of at least

     80);

(2) a step of forming a second metal oxide layer by a sputtering method using a target containing zinc element;

(3) a step of forming a metal layer by a sputtering method using a target containing silver as its main component;

(4) a step of forming a third metal oxide layer by a sputtering method using a target containing zinc element.

8. A process for producing an electroconductive laminate, which comprises repeating the following steps (1) to (3) in total n times (wherein n is an integer of from 1 to 6);

and then forming a first metal oxide layer as the outermost layer by carrying out the following step (1);

(1) a step of forming a first metal oxide layer on one surface of a substrate by a sputtering method using a target containing titanium element and an M element (wherein the M element is niobium element, tantalum element, zirconium element or hafnium element);

(2) a step of forming a second metal oxide layer by a sputtering method using a target containing zinc element;

(3) a step of forming a metal layer by a sputtering method using a target containing silver as its main component.

9. A process for producing an electroconductive laminate, which comprises repeating the following steps (1) to (4) in total n times (wherein n is an integer of from 1 to 6);

and then forming a first metal oxide layer as the outermost layer by carrying out the following step (1);

(1) a step of forming a first metal oxide layer on one surface of a substrate by a sputtering method using a target containing titanium element and an M element (wherein the M element is niobium element, tantalum element, zirconium element or hafnium element);

(2) a step of forming a second metal oxide layer by a sputtering method using a target containing zinc element;

(3) a step of forming a metal layer by a sputtering method using a target containing silver as its main component;

(4) a step of forming a third metal oxide layer by a sputtering method using a target containing zinc element.