METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:
- forming an oxide semiconductor layer;
forming an oxide insulating film so as to be in contact with the oxide semiconductor layer;
adding oxygen into the oxide semiconductor layer through the oxide insulating film;
performing heat treatment on the oxide insulating film and the oxide semiconductor layer.
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Abstract
In a transistor including an oxide semiconductor layer, an oxide insulating layer is formed so as to be in contact with the oxide semiconductor layer. Then, oxygen is introduced (added) to the oxide semiconductor layer through the oxide insulating layer, and heat treatment is performed. Through these steps of oxygen introduction and heat treatment, impurities such as hydrogen, moisture, a hydroxyl group, or hydride are intentionally removed from the oxide semiconductor layer, so that the oxide semiconductor layer is highly purified.
165 Citations
23 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming an oxide semiconductor layer; forming an oxide insulating film so as to be in contact with the oxide semiconductor layer; adding oxygen into the oxide semiconductor layer through the oxide insulating film; performing heat treatment on the oxide insulating film and the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor device comprising the steps of:
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forming a first gate electrode layer over a substrate; forming a gate insulating layer over the first gate electrode layer; forming an oxide semiconductor layer over the gate insulating layer; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; forming an oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, so as to be in contact with the oxide semiconductor layer; adding oxygen into the oxide semiconductor layer through the oxide insulating layer; performing heat treatment on the oxide insulating layer and the oxide semiconductor layer; and forming a first insulating layer over the oxide insulating layer. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
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17. A method for manufacturing a semiconductor device comprising the steps of:
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forming a source electrode layer and a drain electrode layer over a substrate; forming an oxide semiconductor layer over the source electrode layer and the drain electrode layer; forming an oxide insulating layer so as to be in contact with the oxide semiconductor layer; adding oxygen into the oxide semiconductor layer through the oxide insulating layer; performing heat treatment on the oxide insulating layer and the oxide semiconductor layer; forming a first insulating layer over the oxide insulating layer; and forming a gate electrode layer over the first insulating layer overlapping with the oxide semiconductor layer. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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