SEMICONDUCTOR POWER DEVICE HAVING A STACKED DISCRETE INDUCTOR STRUCTURE
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Abstract
A power device includes a discrete inductor having contacts formed on a first surface of the discrete inductor and at least one semiconductor component mounted on the first surface of the discrete inductor and coupled to the contacts. The discrete inductor further includes contacts formed on a second surface opposite the first surface and routing connections connecting the first surface contacts to corresponding second surface contacts. The semiconductor components may be flip chip mounted onto the discrete inductor contacts or wire bonded thereto.
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Citations
57 Claims
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1-37. -37. (canceled)
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38. A method of manufacturing a semiconductor power device comprising:
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providing a discrete inductor; forming a plurality of contacts on a first surface of the discrete inductor; mounting at least one semiconductor component on the first surface of the discrete inductor; and coupling the at least one semiconductor component to the plurality of contacts on the first surface. - View Dependent Claims (39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55)
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56. A method comprising:
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providing a discrete inductor; and forming contacts on a first surface of the inductor such that said contacts form a lead frame for electrically connecting a semiconductor integrated circuit to said lead frame.
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57. A method of manufacturing a semiconductor power device comprising:
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providing a discrete inductor; and forming a plurality of contacts on a first surface of the discrete inductor such that said contacts further include a ball grid array for flip chip mounting a semiconductor component on the ball grid array.
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Specification