SEMICONDUCTOR POWER DEVICE HAVING A STACKED DISCRETE INDUCTOR STRUCTURE

• US 20110212577A1
• Filed: 08/26/2010
• Published: 09/01/2011
• Est. Priority Date: 06/12/2007
• Status: Abandoned Application

• Current Assignee: Hébert, François
• Original Assignee: Hébert, François
• Inventors: Hébert, François
• Application Number:
  US12/868,735
• Publication Number:
  US 20110212577A1
• Time in Patent Office: Days
• US Class Current: 438/123
• CPC Class Codes: H01F 17/0013 with stacked layers
• CPC Class Codes: H01F 17/045 with core of cylindric geometry and coil wound along its longitudinal axis, i.e. rod or drum core
• CPC Class Codes: H01F 2007/1822 using a capacitor to produce a boost voltage
• CPC Class Codes: H01F 27/292 Surface mounted devices
• CPC Class Codes: H01F 27/40 Structural association with built-in electric component, e.g. fuse
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16235 the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/48799 Principal constituent of the connecting portion of the wire connector being Copper (Cu)
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 2224/85 using a wire connector
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 25/072 : the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10162 : with a square active surface
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/15173 : in a single layer of the multilayer substrate
• CPC Class Codes: H01L 2924/15174 : in different layers of the multilayer substrate
• CPC Class Codes: H01L 2924/1532 : the connection portion being formed on the die mounting surface of the substrate
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/30107 : Inductance

Abstract

A power device includes a discrete inductor having contacts formed on a first surface of the discrete inductor and at least one semiconductor component mounted on the first surface of the discrete inductor and coupled to the contacts. The discrete inductor further includes contacts formed on a second surface opposite the first surface and routing connections connecting the first surface contacts to corresponding second surface contacts. The semiconductor components may be flip chip mounted onto the discrete inductor contacts or wire bonded thereto.

Claims

1-37. -37. (canceled)

38. A method of manufacturing a semiconductor power device comprising:

providing a discrete inductor;

forming a plurality of contacts on a first surface of the discrete inductor;

mounting at least one semiconductor component on the first surface of the discrete inductor; and

coupling the at least one semiconductor component to the plurality of contacts on the first surface.

39. The method of claim 38, further comprising forming a plurality of second contacts on a second surface opposite the first surface;

and

further comprising connecting the first surface contacts to the second contacts by routing connections.

40. The method of claim 39, further comprising connecting the first surface contacts to the second contacts by the routing connections;

further comprising forming the routing connections on a surface of the discrete inductor; and

further comprising wrapping the routing connections around a periphery of the discrete inductor.

41. The method of claim 39, further comprising connecting the first surface contacts to the second contacts by a plurality of routing connections that comprise through vias.

42. The method of claim 39, further comprising connecting the first surface contacts to the second contacts by a plurality of the routing connections that comprise AgNiSn, and further comprising providing AgNiSn as at least one of the first and the second contacts.

43. The method of claim 38, further comprising providing a Schottky diode and a control circuitry and further comprising assembling the discrete inductor and the semiconductor component as a boost power converter.

44. The method of claim 43, further comprising flip chip mounting the Schottky diode and the control circuitry to the contacts.

45. The method of claim 43, further comprising wire bonding the Schottky diode and the control circuitry to the contacts.

46. The method of claim 38, wherein mounting the at least one semiconductor component further comprises mounting a power integrated circuit on the first surface of the discrete inductor;

and further comprising assembling the discrete inductor and the semiconductor component as a buck power converter.

47. The method of claim 46, wherein mounting the power integrated circuit further comprises flip chip mounting the power integrated circuit to the contacts.

48. The method of claim 46, wherein mounting the power integrated circuit further comprises wire bonding the power integrated circuit to the contacts.

49. The method of claim 38, further comprising providing a surface mount wire-wound discrete inductor as the discrete inductor.

50. The method of claim 38, further comprising providing a multi-layer discrete inductor as the discrete inductor.

51. The method of claim 38, further comprising covering the at least one semiconductor component with an encapsulant, and covering the first surface contacts with the encapsulant.

52. The method of claim 38, further comprising forming a patterned contact on the first surface of the discrete inductor, and connecting a first contact to a second contact on the first surface.

53. The method of claim 52, further comprising connecting the first contact to the semiconductor component using a small solder ball;

further comprising forming a large solder ball on the second contact; and

further comprising arranging the large solder ball so that the large solder ball is substantially coplanar to a surface of the semiconductor component.

54. The method of claim 53, further comprising exposing said surface of the semiconductor component facing away from the discrete inductor, and further comprising mounting said surface to a printed circuit board.

55. The method of claim 38, wherein forming a plurality of contacts on a first surface of the discrete inductor further comprises electroplating said contacts onto said first surface.

56. A method comprising:

providing a discrete inductor; and

forming contacts on a first surface of the inductor such that said contacts form a lead frame for electrically connecting a semiconductor integrated circuit to said lead frame.

57. A method of manufacturing a semiconductor power device comprising:

providing a discrete inductor; and

forming a plurality of contacts on a first surface of the discrete inductor such that said contacts further include a ball grid array for flip chip mounting a semiconductor component on the ball grid array.