Method for Forming Shielded Gate Field Effect Transistors
7 Assignments
0 Petitions
Accused Products
Abstract
A method for forming a field effect transistor includes forming a trench in a semiconductor region and forming a dielectric layer lining lower sidewalls and bottom surface of the trench. After forming the dielectric layer, a lower portion of the trench is filled with a shield electrode. An inter-electrode dielectric (IED) is formed in the trench over the shield electrode by carrying out a steam ambient oxidation and carrying out a dry ambient oxidation. A gate electrode is formed in an upper portion of the trench. The gate electrode may be insulated from the shield electrode by the IED.
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Citations
36 Claims
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1-21. -21. (canceled)
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22. A method for forming a field effect transistor comprising:
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forming a trench in a semiconductor region; forming a dielectric layer lining lower sidewalls and bottom surface of the trench; after forming the dielectric layer, filling a lower portion of the trench with a shield electrode; forming an inter-electrode dielectric (IED) in the trench over the shield electrode, comprising; carrying out a steam ambient oxidation; carrying out a dry ambient oxidation; and forming a gate electrode in an upper portion of the trench, the gate electrode being insulated from the shield electrode by the IED. - View Dependent Claims (23, 24, 25, 26, 27, 28)
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29. A method for forming a field effect transistor comprising:
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forming a trench in a semiconductor region; forming a dielectric layer lining lower sidewalls and bottom surface of the trench; after forming the dielectric layer, filling a lower portion of the trench with a shield electrode; forming an inter-electrode dielectric (IED) in the trench over the shield electrode, comprising; carrying out a steam ambient oxidation; carrying out an inert anneal in an inert ambient; and forming a gate electrode in an upper portion of the trench, the gate electrode being insulated from the shield electrode by the IED. - View Dependent Claims (30)
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31. A method for forming a field effect transistor comprising:
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forming a trench in a semiconductor region; forming a dielectric layer lining lower sidewalls and bottom surface of the trench; after forming the dielectric layer, filling a lower portion of the trench with a shield electrode; forming an inter-electrode dielectric (IED) in the trench over the shield electrode, comprising; forming an oxide layer using one high density plasma process and sub-atmospheric chemical vapor deposition; carrying out a dry ambient oxidation; and forming a gate electrode in an upper portion of the trench, the gate electrode being insulated from the shield electrode by the IED. - View Dependent Claims (32, 33, 34, 35)
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36-71. -71. (canceled)
Specification