METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT AND DEPOSITION APPARATUS

• US 20110212605A1
• Filed: 02/17/2011
• Published: 09/01/2011
• Est. Priority Date: 02/26/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: TAKASE, Natsuko, YAMAZAKI, Shunpei
• Granted Patent: US 8,772,160 B2
• Time in Patent Office: Days
• US Class Current: 438/482
• CPC Class Codes: C23C 14/08 Oxides C23C14/10 takes precedence
• CPC Class Codes: C23C 14/3457 using other particles than noble gas ions C23C14/0036, C23C14/46 take precedence
• CPC Class Codes: C23C 14/566 using a load-lock chamber
• CPC Class Codes: C23C 16/4408 by purging residual gases from the reaction chamber or gas lines
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: H01J 37/34 operating with cathodic sputtering H01J37/36 takes precedence ; methods of cathodic sputtering C23C14/34
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/67167 surrounding a central transfer chamber
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An object of the present invention is to provide an apparatus for successive deposition used for manufacturing a semiconductor element including an oxide semiconductor in which impurities are not included. By using the deposition apparatus capable of successive deposition of the present invention that keeps its inside in high vacuum state, and thus allows films to be deposited without being exposed to the air, the entry of impurities such as hydrogen into the oxide semiconductor layer and the layer being in contact with the oxide semiconductor layer can be prevented; as a result, a semiconductor element including a high-purity oxide semiconductor layer in which hydrogen concentration is sufficiently reduced can be manufactured. In such a semiconductor element, off-state current is low, and a semiconductor device with low power consumption can be realized.

Claims

1. A deposition apparatus comprising:

a load lock chamber connected to a unit capable of evacuating the load lock chamber to have a pressure of 10<sup>−

6</sup> Pa or less;

a plurality of deposition chambers each being connected to a unit capable of evacuating the deposition chamber to have a pressure of 10<sup>−

8</sup> Pa or less;

a heating chamber connected to a unit capable of evacuating the heating chamber to have a pressure of 10<sup>−

8</sup> Pa or less; and

a transfer chamber connected to the load lock chamber, the heating chamber, and the plurality of deposition chambers through gate valves and connected to a unit capable of evacuating the transfer chamber to have a pressure of 10<sup>−

6</sup> Pa or less.

2. The deposition apparatus according to claim 1, wherein the units capable of evacuating the load lock chamber, the heating chamber, the plurality of deposition chambers, and the transfer chamber are entrapment pumps.

3. The deposition apparatus according to claim 1, wherein the amount of leakage of the air from the deposition chamber is 10⁻

11 Pa·

m³/s or less.

4. The deposition apparatus according to claim 1, further comprising a treatment chamber provided with a unit capable of generating oxygen radical and a unit capable of evacuating the treatment chamber to have a pressure of 10⁻

8 Pa or less.

5. The deposition apparatus according to claim 1, wherein the heating chamber has a unit capable of heating at room temperature to 700°

C. inclusive.

6. A deposition apparatus comprising:

a load lock chamber connected to a unit capable of evacuating the load lock chamber to have a pressure of 10<sup>−

6</sup> Pa or less;

a plurality of deposition chambers each including a substrate holding portion provided with a first heating unit for heating a substrate and a second heating unit for heating a wall surface of a periphery of the substrate holding portion, and each being connected to a unit capable of evacuating the deposition chamber to have a pressure of 10<sup>−

8</sup> Pa or less;

a heating chamber connected to a unit capable of evacuating the heating chamber to have a pressure of 10<sup>−

8</sup> Pa or less; and

a transfer chamber connected to the load lock chamber, the heating chamber, and the plurality of deposition chambers through gate valves and connected to a unit capable of evacuating the transfer chamber to have a pressure of 10<sup>−

6</sup> Pa or less.

7. The deposition apparatus according to claim 6, wherein the units capable of evacuating the load lock chamber, the heating chamber, the plurality of deposition chambers, and the transfer chamber are entrapment pumps.

8. The deposition apparatus according to claim 6, wherein at least one of the plurality of deposition chambers is provided with a target holding portion for fixing a target.

9. The deposition apparatus according to claim 6, wherein the amount of leakage of the air from the deposition chamber is 10⁻

11 Pa·

m³/s or less.

10. The deposition apparatus according to claim 6, wherein the first heating unit is a unit capable of heating the substrate at room temperature to 500°

C. inclusive.

11. The deposition apparatus according to claim 6, further comprising a treatment chamber provided with a unit capable of generating oxygen radical and a unit capable of evacuating the treatment chamber to have a pressure of 10⁻

8 Pa or less.

12. The deposition apparatus according to claim 6, wherein the heating chamber has a unit capable of heating at room temperature to 700°

C. inclusive.

13. A method for manufacturing a semiconductor element comprising the steps of:

transferring a substrate into a load lock chamber;

evacuating the load lock chamber to have a pressure of 10<sup>−

6</sup> Pa or less;

transferring the substrate into a heating chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less;

performing a heat treatment on the substrate;

transferring the substrate into a first deposition chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less;

introducing a first gas into the first deposition chamber;

forming a gate insulating film over the substrate;

evacuating the first deposition chamber to have a pressure of 10<sup>−

8</sup> Pa or less;

transferring the substrate into a second deposition chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less;

introducing a second gas into the second deposition chamber; and

forming an oxide semiconductor film over the gate insulating film.

16. The method for manufacturing a semiconductor element according to claim 13, wherein the first and second gases are high-purity sputtering gases.

19. The method for manufacturing a semiconductor element according to claim 13, further comprising the steps of:

transferring the substrate into a treatment chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less after the oxide semiconductor film is formed; and

performing an oxygen radical treatment on the oxide semiconductor film.

22. The method for manufacturing a semiconductor element according to claim 13, wherein the oxide semiconductor film with a thickness of greater than or equal to 2 nm and less than or equal to 200 nm is formed in 10 minutes.

14. A method for manufacturing a semiconductor element comprising the steps of:

transferring a substrate into a load lock chamber;

evacuating the load lock chamber to have a pressure of 10<sup>−

6</sup> Pa or less;

transferring the substrate into a heating chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less;

performing a heat treatment on the substrate;

transferring the substrate into a first deposition chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less;

introducing a first gas into the first deposition chamber;

forming an oxide semiconductor film over the substrate;

evacuating the first deposition chamber to have a pressure of 10<sup>−

8</sup> Pa or less;

transferring the substrate into a second deposition chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less;

introducing a second gas into the second deposition chamber; and

forming a conductive film over the oxide semiconductor film.

17. The method for manufacturing a semiconductor element according to claim 14, wherein the first and second gases are high-purity sputtering gases.

20. The method for manufacturing a semiconductor element according to claim 14, further comprising the steps of:

transferring the substrate into a treatment chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less after the oxide semiconductor film is formed; and

performing an oxygen radical treatment on the oxide semiconductor film.

23. The method for manufacturing a semiconductor element according to claim 14, wherein the oxide semiconductor film with a thickness of greater than or equal to 2 nm and less than or equal to 200 nm is formed in 10 minutes.

15. A method for manufacturing a semiconductor element comprising the steps of:

transferring a substrate into a load lock chamber;

evacuating the load lock chamber to have a pressure of 10<sup>−

6</sup> Pa or less;

transferring the substrate into a heating chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less;

performing a heat treatment on the substrate;

transferring the substrate into a first deposition chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less;

introducing a first gas into the first deposition chamber

forming a gate insulating film over the substrate;

evacuating the first deposition chamber to have a pressure of 10<sup>−

8</sup> Pa or less;

transferring the substrate into a second deposition chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less;

introducing a second gas into the second deposition chamber;

forming an oxide semiconductor film over the gate insulating film;

evacuating the second deposition chamber to have a pressure of 10<sup>−

8</sup> Pa or less;

transferring the substrate into a third deposition chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less;

introducing a third gas into the third deposition chamber; and

forming a conductive film over the oxide semiconductor film.

18. The method for manufacturing a semiconductor element according to claim 15, wherein the first, second and third gases are high-purity sputtering gases.

21. The method for manufacturing a semiconductor element according to claim 15, further comprising the steps of:

transferring the substrate into a treatment chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less after the oxide semiconductor film is formed; and

performing an oxygen radical treatment on the oxide semiconductor film.

24. The method for manufacturing a semiconductor element according to claim 15, wherein the oxide semiconductor film with a thickness of greater than or equal to 2 nm and less than or equal to 200 nm is formed in 10 minutes.

25. A method for manufacturing a semiconductor element comprising the steps of:

transferring a substrate into a load lock chamber;

evacuating the load lock chamber to have a pressure of 10<sup>−

6</sup> Pa or less;

transferring the substrate into a first deposition chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less;

introducing a first gas into the first deposition chamber;

forming a first oxide semiconductor film over the substrate;

evacuating the first deposition chamber to have a pressure of 10<sup>−

8</sup> Pa or less;

transferring the substrate into a first heating chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less;

performing a first heat treatment on the substrate;

transferring the substrate into a second deposition chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less;

introducing a second gas into the second deposition chamber;

forming a second oxide semiconductor film over the first oxide semiconductor film;

evacuating the second deposition chamber to have a pressure of 10<sup>−

8</sup> Pa or less;

transferring the substrate into a second heating chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less; and

performing a second heat treatment on the substrate.

27. The method for manufacturing a semiconductor element according to claim 25, further comprising the steps of:

transferring the substrate into a treatment chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less after the second oxide semiconductor film is formed; and

performing an oxygen radical treatment on the second oxide semiconductor film.

29. The method for manufacturing a semiconductor element according to claim 25,

wherein the first oxide semiconductor film with a thickness of greater than or equal to 2 nm and less than or equal to 30 nm is formed in 10 minutes, and

wherein the second oxide semiconductor film with a thickness of greater than or equal to 20 nm and less than or equal to 200 nm in 10 minutes.

26. A method for manufacturing a semiconductor element comprising the steps of:

transferring a substrate into a load lock chamber;

evacuating the load lock chamber to have a pressure of 10<sup>−

6</sup> Pa or less;

transferring the substrate into a first deposition chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less;

introducing a first gas into the first deposition chamber;

forming a first oxide semiconductor film over the substrate while performing a first heat treatment on the substrate;

evacuating the first deposition chamber to have a pressure of 10<sup>−

8</sup> Pa or less;

transferring the substrate into a second deposition chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less;

introducing a second gas into the second deposition chamber;

forming a second oxide semiconductor film over the first oxide semiconductor film;

evacuating the second deposition chamber to have a pressure of 10<sup>−

8</sup> Pa or less;

transferring the substrate into a second heating chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less; and

performing a second heat treatment on the substrate.

28. The method for manufacturing a semiconductor element according to claim 26, further comprising the steps of:

transferring the substrate into a treatment chamber evacuated to have a pressure of 10<sup>−

8</sup> Pa or less after the second oxide semiconductor film is formed; and

performing an oxygen radical treatment on the second oxide semiconductor film.

30. The method for manufacturing a semiconductor element according to claim 26,

wherein the first oxide semiconductor film with a thickness of greater than or equal to 2 nm and less than or equal to 30 nm is formed in 10 minutes, and

wherein the second oxide semiconductor film with a thickness of greater than or equal to 20 nm and less than or equal to 200 nm is formed in 10 minutes.