SEQUENTIAL PULSE DEPOSITION

• US 20110212628A1
• Filed: 02/28/2011
• Published: 09/01/2011
• Est. Priority Date: 02/13/2001
• Status: Abandoned Application

• Current Assignee: MOSAID Technologies Inc. (f/k/a Conversant Intellectual Property Management)
• Original Assignee: MOSAID Technologies Inc. (f/k/a Conversant Intellectual Property Management)
• Inventors: Li, Weimin
• Application Number:
  US13/037,113
• Publication Number:
  US 20110212628A1
• Time in Patent Office: Days
• US Class Current: 438/761
• CPC Class Codes: C23C 16/4408 by purging residual gases from the reaction chamber or gas lines
• CPC Class Codes: C23C 16/45523 Pulsed gas flow or change of composition over time
• CPC Class Codes: C23C 16/45527 characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01L 21/28506 of conductive layers

Abstract

A method for growing films on substrates using sequentially pulsed precursors and reactants, system and devices for performing the method, semiconductor devices so produced, and machine readable media containing the method.

Claims

1. A method of forming a film on a substrate, comprising:

flowing a purge gas into a reaction chamber containing the substrate;

injecting a pulse of precursor gas into the reaction chamber to initiate depositing a film on the substrate;

injecting a pulse of reactant gas into the reaction chamber at a reactant gas pulse time, the reactant gas pulse time being after the pulse of precursor gas has been injected into the reaction chamber and prior to complete purge of the precursor gas; and

reacting the precursor gas with the reactant gas adjacent the substrate to deposit a layer of the film on the substrate.

2. The method of claim 1, wherein the above process is repeated until the film has a desired thickness, with injection of another pulse of precursor gas into the chamber after the reactant gas pulse time and prior to complete purge of the reactant gas.

3. The method of claim 1, wherein reacting the precursor with the reactant forms a layer on the substrate at a rate greater than 100 Å

/cycle.