FILM DEPOSITION APPARATUS
First Claim
1. A film deposition apparatus for forming a thin film by sequentially supplying at least two kinds of reaction gases to a surface of a substrate and performing such a gas supply cycle a plurality of times to deposit multiple layers of a reaction product in a vacuum chamber, the film deposition apparatus comprising:
- a turntable provided in the vacuum chamber;
a substrate receiving area provided in the turntable in order for the substrate to be placed therein;
a first reaction gas supplying portion and a second reaction gas supplying portion that are provided above the turntable, away from each other in a rotation direction of the turntable, and supply a first reaction gas and a second reaction gas, respectively;
a separation area that is positioned between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, in order to separate atmospheres of these process areas, and includes a separation gas supplying portion that supplies a separation gas; and
an evacuation port that evacuates the vacuum chamber,wherein at least one of the first reaction gas supplying portion and the second reaction gas supplying portion extends in a direction intersecting a direction along which the substrate receiving area moves, and is configured as a gas nozzle in which ejection holes for ejecting a reaction gas toward the turntable are arranged along a longitudinal direction thereof,wherein a flow space for causing the separation gas to flow therethrough is formed above the gas nozzle, andwherein the gas nozzle is provided with a flow regulation member that extends outward in at least one direction of an upstream direction and a downstream direction from the gas nozzle.
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Accused Products
Abstract
A film deposition apparatus is provided with a gas nozzle in which ejection holes that eject a reaction gas are formed along a longitudinal direction of the gas nozzle, and a flow regulation member that protrudes from the gas nozzle in either one of upstream and downstream directions of a rotation direction of a turntable. In such a configuration, a separation gas flowing from an upstream side of the rotation direction to the gas nozzle is restricted from flowing between the gas nozzle and the turntable on which a substrate is placed, and the reaction gas flowing upward from the turntable is restricted by the separation gas, thereby impeding a reaction gas concentration in a process area from being lowered.
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Citations
15 Claims
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1. A film deposition apparatus for forming a thin film by sequentially supplying at least two kinds of reaction gases to a surface of a substrate and performing such a gas supply cycle a plurality of times to deposit multiple layers of a reaction product in a vacuum chamber, the film deposition apparatus comprising:
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a turntable provided in the vacuum chamber; a substrate receiving area provided in the turntable in order for the substrate to be placed therein; a first reaction gas supplying portion and a second reaction gas supplying portion that are provided above the turntable, away from each other in a rotation direction of the turntable, and supply a first reaction gas and a second reaction gas, respectively; a separation area that is positioned between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, in order to separate atmospheres of these process areas, and includes a separation gas supplying portion that supplies a separation gas; and an evacuation port that evacuates the vacuum chamber, wherein at least one of the first reaction gas supplying portion and the second reaction gas supplying portion extends in a direction intersecting a direction along which the substrate receiving area moves, and is configured as a gas nozzle in which ejection holes for ejecting a reaction gas toward the turntable are arranged along a longitudinal direction thereof, wherein a flow space for causing the separation gas to flow therethrough is formed above the gas nozzle, and wherein the gas nozzle is provided with a flow regulation member that extends outward in at least one direction of an upstream direction and a downstream direction from the gas nozzle. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A film deposition apparatus wherein a turntable on which plural substrates are placed is rotated in a vacuum chamber so that the substrates contact in turn reaction gases that are supplied to plural different process areas, thereby forming a thin film on the substrates, the film deposition apparatus comprising:
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a separation area that is provided between the plural process areas and supplies a separation gas that impedes different reaction gases from reacting with each other in a space away from upper surfaces of the substrates; reaction gas supplying portions that supply the corresponding reaction gases toward the substrates in the vicinities of the substrates and that are away from a ceiling of the process areas; a flow regulation member that suppresses a concentration of the reaction gas from being lowered by the separation gas that flows into the process area from the separation area and further flows into a gap between the reaction gas supplying portion and the substrate; and a gas flow passage that is provided between the ceiling of the process area and the reaction gas supplying portion, and to which the flow regulation member guides the separation gas. - View Dependent Claims (14, 15)
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Specification