ROOM-TEMPERATURE BONDING METHOD AND ROOM-TEMPERATURE BONDING APPARATUS

• US 20110214816A1
• Filed: 05/06/2011
• Published: 09/08/2011
• Est. Priority Date: 09/06/2006
• Status: Active Grant

• Current Assignee: Mitsubishi Heavy Industries Machine Tool Co., Ltd. (Nidec Corporation)
• Original Assignee: Hideki Takagi, Jun Utsumi, Kensuke Ide, Masahiro Funayama, Takayuki Goto
• Inventors: Takagi, Hideki, Goto, Takayuki, Utsumi, Jun, Ide, Kensuke, Funayama, Masahiro
• Granted Patent: US 8,608,048 B2
• Time in Patent Office: Days
• US Class Current: 156/382
• CPC Class Codes: B23K 20/02 by means of a press ; Diffusion bonding B23K20/001, B23K20/04 take precedence
• CPC Class Codes: B23K 20/16 with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
• CPC Class Codes: B23K 20/24 Preliminary treatment
• CPC Class Codes: B23K 2101/36 Electric or electronic devices
• CPC Class Codes: C23C 14/16 on metallic substrates or on substrates of boron or silicon
• CPC Class Codes: C23C 14/3464 using more than one target C23C14/56 takes precedence
• CPC Class Codes: C23C 14/46 by ion beam produced by an external ion source
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187

Abstract

A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. In this case, it is preferable that the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.

Claims

1-7. -7. (canceled)

8. A room-temperature bonding apparatus comprising:

a vacuum chamber,

an evacuation apparatus evacuating said vacuum chamber,

a pair of substrate holders arranged to face each other in said vacuum chamber,

a pressure bonding mechanism connected to said substrate holder to bond substrates mounted on the respective substrate holders to each other, and

a physical sputtering source,

wherein a target irradiated with ion beams or atom beams emitted from said physical sputtering source is arranged in said vacuum chamber independently of said substrate holders, said pressure bonding mechanism and said physical sputtering source.

9. The room-temperature bonding apparatus according to claim 8, wherein said target is mounted on a singular or plurality of target substrates.

10. The room-temperature bonding apparatus according to claim 9, wherein said target is composed of a plurality of types of materials, and

wherein said plurality of types of materials is arranged independently of one another or arranged as an alloy.

11. The room-temperature bonding apparatus according to any of claims 8 to 10, wherein surfaces to be irradiated of said target are arranged so that the number of said surfaces is plural so as to surround a substrates and are oriented in a perpendicular direction to a surface to be bonded of said substrates.

12. The room-temperature bonding apparatus according to any of claims 8 to 10, wherein a shape of a surface to be irradiated of said target is curved so that when said ion beams or atom beams emitted from said physical sputtering source to said surface to be irradiated generate sputtered atoms on respective portions of said target in the direction of regular reflection, said sputtered atoms are parallel to one another.

13. The room-temperature bonding apparatus according to any of claims 8 to 10, wherein a shape of a surface to be irradiated of said target is curved so that when said ion beams or atom beams emitted from said physical sputtering source to said surface to be irradiated generate sputtered atoms on respective portions of said target in the direction of regular reflection, said sputtered atoms converge at a central position of said substrate.

14. The room-temperature bonding apparatus according to claim 8, further comprising:

a mechanism for adjusting a distance between said surface to be irradiated of said target and said surface to be bonded of said substrate.

15. The room-temperature bonding apparatus according to claim 8, further comprising:

a mechanism for adjusting an angle formed by said surface to be irradiated of said target and said surface to be bonded of said substrate.

16. The room-temperature bonding apparatus according to claim 14 or 15, further comprising:

a mechanism for adjusting a distance between said surface to be irradiated of said target and said surface to be bonded of said substrate, based on an energy area density distribution of said ion beams or atom beams in a perpendicular direction to an emitting direction of said ion beams or atom beams emitted to said surface to be irradiated of said target.

17. The room-temperature bonding apparatus according to claim 14 or 15, further comprising:

a mechanism for adjusting an angle of said surface to be irradiated of said target with respect to an emitting direction of said ion beams or atom beams emitted to said surface to be irradiated of said target, based on an energy area density distribution of said ion beams or atom beams in a perpendicular direction to said emitting direction of said ion beams or atom beams.