SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. An active matrix display device comprising:
- a substrate;
a transistor over the substrate, the transistor comprising;
a gate electrode;
a gate insulating layer over the gate electrode; and
an oxide semiconductor layer having a channel formation region over the gate electrode with the gate insulating layer interposed therebetween, the oxide semiconductor layer comprising an In—
Sn—
Zn—
O based semiconductor;
an insulating layer comprising aluminum oxide over the oxide semiconductor layer;
a pixel electrode in electrical contact with the oxide semiconductor layer; and
a light emitting layer over the pixel electrode.
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Abstract
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.
196 Citations
10 Claims
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1. An active matrix display device comprising:
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a substrate; a transistor over the substrate, the transistor comprising; a gate electrode; a gate insulating layer over the gate electrode; and an oxide semiconductor layer having a channel formation region over the gate electrode with the gate insulating layer interposed therebetween, the oxide semiconductor layer comprising an In—
Sn—
Zn—
O based semiconductor;an insulating layer comprising aluminum oxide over the oxide semiconductor layer; a pixel electrode in electrical contact with the oxide semiconductor layer; and a light emitting layer over the pixel electrode. - View Dependent Claims (5, 6, 7, 9, 10)
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2. An active matrix display device comprising:
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a substrate; a transistor over the substrate, the transistor comprising; a gate electrode; a gate insulating layer over the gate electrode; and an oxide semiconductor layer having a channel formation region over the gate electrode with the gate insulating layer interposed therebetween, the oxide semiconductor layer comprising an In—
Sn—
Zn—
O based semiconductor;a source electrode over the oxide semiconductor layer; a drain electrode over the oxide semiconductor layer; an insulating layer comprising aluminum oxide over the oxide semiconductor layer, the source electrode and the drain electrode; a pixel electrode in electrical contact with one of the source electrode and the drain electrode; and a light emitting layer over the pixel electrode.
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3. An active matrix display device comprising:
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a substrate; a pixel comprising; a first transistor; a pixel electrode in electrical contact with the first transistor; and a light emitting layer over the pixel electrode; a scan line driver circuit operationally connected to the pixel, the scan line driver circuit comprising a second transistor, each of the first transistor and the second transistor comprising; a gate electrode over the substrate; a gate insulating layer over the gate electrode; and an oxide semiconductor layer having a channel formation region over the gate electrode with the gate insulating layer interposed therebetween, the oxide semiconductor layer comprising an In—
Sn—
Zn—
O based semiconductor;an insulating layer comprising aluminum oxide over the oxide semiconductor layer. - View Dependent Claims (8)
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4. An active matrix display device comprising:
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a substrate; a pixel comprising; a first transistor; a pixel electrode in electrical contact with the first transistor; and a light emitting layer over the pixel electrode; a scan line driver circuit operationally connected to the pixel, the scan line driver circuit comprising a second transistor, each of the first transistor and the second transistor comprising; a gate electrode over the substrate; a gate insulating layer over the gate electrode; and an oxide semiconductor layer having a channel formation region over the gate electrode with the gate insulating layer interposed therebetween, the oxide semiconductor layer comprising an In—
Sn—
Zn—
O based semiconductor;a source electrode over the oxide semiconductor layer; a drain electrode over the oxide semiconductor layer; and an insulating layer comprising aluminum oxide over the oxide semiconductor layer, the source electrode and the drain electrode.
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Specification