METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A method for manufacturing a semiconductor device comprising the step of:
- forming an oxide semiconductor layer for a channel formation region of a transistor in a film formation chamber into which a substance containing a halogen element is introduced in a gaseous state.
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Accused Products
Abstract
A highly purified oxide semiconductor layer is formed in such a manner that a substance that firmly bonds during film formation to an impurity containing a hydrogen atom is introduced into a film formation chamber, the substance is reacted with the impurity containing a hydrogen atom remaining in the film formation chamber, and the substance is changed to a stable substance containing the hydrogen atom. The stable substance containing the hydrogen atom is exhausted without providing a metal atom of an oxide semiconductor layer with the hydrogen atom; therefore, a phenomenon in which a hydrogen atom or the like is taken into the oxide semiconductor layer can be prevented. As the substance that firmly bonds to the impurity containing a hydrogen atom, a substance containing a halogen element is preferable, for example.
175 Citations
22 Claims
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1. A method for manufacturing a semiconductor device comprising the step of:
forming an oxide semiconductor layer for a channel formation region of a transistor in a film formation chamber into which a substance containing a halogen element is introduced in a gaseous state. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating layer over the gate electrode; forming an oxide semiconductor layer over the gate insulating layer in a film formation chamber into which a substance containing a halogen element is introduced in a gaseous state; and forming a source electrode and a drain electrode over the oxide semiconductor layer. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A method for manufacturing a semiconductor device comprising the steps of:
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forming a source electrode and a drain electrode over a substrate; forming an oxide semiconductor layer over the source electrode and the drain electrode in a film formation chamber into which a substance containing a halogen element is introduced in a gaseous state; forming a gate insulating layer over the oxide semiconductor layer; and forming a gate electrode over the gate insulating layer. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A semiconductor device comprising:
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an oxide semiconductor layer comprising a channel formation region of a transistor, wherein the oxide semiconductor layer comprises a halogen element, and wherein a concentration of the halogen element is 1015 atoms/cm3 to 1018 atoms/cm3 inclusive. - View Dependent Claims (21, 22)
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Specification