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SEMICONDUCTOR DEVICES WITH HETEROJUNCTION BARRIER REGIONS AND METHODS OF FABRICATING SAME

  • US 20110215338A1
  • Filed: 03/08/2010
  • Published: 09/08/2011
  • Est. Priority Date: 03/08/2010
  • Status: Active Grant
First Claim
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1. An electronic device, comprising:

  • a silicon carbide layer including an n-type drift region therein;

    a contact forming a Schottky junction with the drift region; and

    a p-type junction barrier region on the silicon carbide layer, the p-type junction barrier region including a p-type polysilicon region forming a P-N heterojunction with the drift region and the p-type junction barrier region being electrically connected to the contact.

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