LIGHT EMITTING DEVICE

• US 20110215358A1
• Filed: 03/03/2011
• Published: 09/08/2011
• Est. Priority Date: 03/08/2010
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: HWANG, Sung Min, JO, Kyoung Woo
• Granted Patent: US 8,772,806 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

A light emitting device of the embodiment includes a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer; a first cavity passing through the first semiconductor layer and the active layer to expose the second semiconductor layer; a first electrode extending to the outside of the first cavity from the second semiconductor layer in the first cavity; a second electrode disposed on an outer peripheral region of a bottom surface of the first semiconductor layer and spaced apart from the first electrode while surrounding a lateral side of the first electrode; and a first insulating layer between the first electrode and the light emitting structure.

Claims

1. A light emitting device comprising:

a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer;

a first cavity passing through the first semiconductor layer and the active layer to expose the second semiconductor layer;

a first electrode extending to the outside of the first cavity from the second semiconductor layer in the first cavity;

a second electrode disposed on an outer peripheral region of a bottom surface of the first semiconductor layer and spaced apart from the first electrode while surrounding a lateral side of the first electrode; and

a first insulating layer between the first electrode and the light emitting structure.

2. The light emitting device of claim 1, wherein the first semiconductor layer is a p type semiconductor layer and the second semiconductor layer is an n type semiconductor layer.

3. The light emitting device of claim 1, wherein a bottom surface of the first electrode has the same height as that of a bottom surface of the second electrode.

4. The light emitting device of claim 1, wherein a plurality of first cavities are provided and a plurality of first electrodes are disposed in the first cavities, respectively.

5. The light emitting device of claim 1, wherein the first cavity has an inclined surface which is inclined with respect to a bottom surface of the second semiconductor layer.

6. The light emitting device of claim 1, wherein the first insulating layer is disposed on an inner wall of the first cavity to insulate the first electrode from the first semiconductor layer and the active layer.

7. The light emitting device of claim 1, further comprising:

a first reflective layer between the first electrode and the second semiconductor layer;

a second reflective layer between the first semiconductor layer and the second electrode, a part of the second reflective layer extending between the first electrode and the first insulating layer; and

a second insulating layer between the first electrode and the second reflective layer.

8. The light emitting device of claim 7, wherein the second insulating layer is disposed on a bottom surface of the second reflective layer between the first and second electrodes.

9. The light emitting device of claim 7, wherein the second insulating layer is connected to the first insulating layer in the first cavity with second reflective layer therebetween.

10. The light emitting device of claim 1, further comprising a concavo-convex shape on a top surface of the second semiconductor layer.

11. The light emitting device of claim 1, further comprising:

a second cavity disposed in opposition to the first cavity and passing through the second semiconductor layer to expose the first electrode;

a first conductive layer on a top surface of the second semiconductor layer; and

a second conductive layer extending from the first conductive layer into the second cavity to contact the first electrode.

12. The light emitting device of claim 11, wherein the first and second conductive layers include materials having light transmittive and conductive properties.

13. The light emitting device of claim 11, wherein the first conductive layer has a thickness of about 100 nm to about 500 nm from the top surface of the second semiconductor layer.

14. The light emitting device of claim 11, wherein a lateral side of the second conductive layer is inclined at an inclination angle of about 30°

to about 80°

with respect to a top surface of the first conductive layer.

15. The light emitting device of claim 11, wherein the second semiconductor layer includes a first concavo-convex shape and the first conductive layer includes a second concavo-convex shape.

16. The light emitting device of claim 1, wherein the first insulating layer includes a dielectric material to form capacitance.

17. A light emitting device comprising:

a light emitting structure including a first semiconductor layer, an active layer, a second semiconductor layer, and a cavity passing through the first semiconductor layer and the active layer to expose the second semiconductor layer;

a first electrode extending to the outside of the cavity from the second semiconductor layer in the cavity;

a second electrode disposed on an outer peripheral region of a bottom surface of the first semiconductor layer and spaced apart from the first electrode while surrounding the lateral side of the first electrode;

an insulating layer between the first electrode and the light emitting structure; and

a conductive member extending from a top surface of the second semiconductor layer through the second semiconductor layer to contact the first electrode.

18. A light emitting device comprising:

a light emitting structure including a first semiconductor layer, an active layer, a second semiconductor layer, and a through hole passing through the first semiconductor layer, the active layer and the second semiconductor layer;

a first electrode extending to the outside of the through hole from an inside of the through hole;

a second electrode disposed on an outer peripheral region of a bottom surface of the first semiconductor layer and spaced apart from the first electrode while surrounding the lateral side of the first electrode;

a conductive member extending from the first electrode onto the second semiconductor layer; and

an insulating member contacting the first electrode in the through hole.

19. The light emitting device of claim 18, wherein the first electrode includes the same material as that of the conductive member.

20. The light emitting device of claim 19, wherein the first electrode and the conductive member include a material having light transmittive and conductive properties.