Through Silicon via Bridge Interconnect

• US 20110215472A1
• Filed: 05/18/2011
• Published: 09/08/2011
• Est. Priority Date: 06/30/2008
• Status: Abandoned Application

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Qualcomm, Inc.
• Inventors: Chandrasekaran, Arvind
• Application Number:
  US13/110,430
• Publication Number:
  US 20110215472A1
• Time in Patent Office: Days
• US Class Current: 257/738
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/0557 the external layer being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/06181 On opposite sides of the body
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/16235 the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73207 Bump and wire connectors
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/81815 Reflow soldering
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06527 Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/0652 : the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 25/0655 : the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10272 : Silicon Carbide [SiC]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/1033 : Gallium nitride [GaN]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1431 : Logic devices
• CPC Class Codes: H01L 2924/1434 : Memory
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/1579 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance

Abstract

An integrated circuit bridge interconnect device includes a first die and a second die provided in a side-by-side configuration and electrically interconnected to each other by a bridge die. The bridge die includes through silicon vias (TSVs) to connect conductive interconnect lines on the bridge die to the first die and the second die. Active circuitry, other than interconnect lines, may be provided on the bridge die. At least one or more additional die may be stacked on the bridge die and interconnected to the bridge die.

Claims

1. A bridge die, comprising:

through vias; and

a conductive layer coupled to the through vias, the conductive layer and the through vias electrically coupling a first die to a second die.

2. The die of claim 1, in which the through vias extend from a first side of the bridge die to a second side of the bridge die, the through vias being filled with conductive material to couple conductive lines on the first side of the bridge die to enable the interconnecting.

3. The die of claim 2, further comprises active circuitry on the first side.

4. The die of claim 2, further comprising at least one contact pad on the second side of the bridge die corresponding to at least one contact pad on first sides of the first and second die.

5. The die of claim 2, in which at least one of the first and second dies comprise:

a flip-chip die having circuitry disposed on a second side; and

flip-chip through vias from a first side of the flip-chip die to the second side of the flip-chip die, the flip-chip through vias being filled with conductive material to couple active circuitry on the second side of the flip-chip die to at least one contact pad on the first side of the flip-chip die.

6. The die of claim 2, in which at least one of the first and second dies comprises circuitry disposed on a first side of the first and second die.

7. The die of claim 2, further comprising:

contacts operable to couple to at least one additional die stacked on the bridge die, the at least one additional die further comprising at least one of passive, active and interconnect circuitry.

8. The die of claim 1, fabricated using a process flow that is different from a process flow corresponding to at least one of the first and the second dies.

9. The die of claim 1, integrated into at least one of a cell phone, hand-held personal communication systems (PCS) units, portable data unit, and fixed location data unit.

10. An integrated circuit package comprising:

a first die disposed on a substrate;

a second die disposed on the substrate; and

a bridge die interconnecting the first die to the second die, the bridge die comprising conductive through vias coupled to conductive lines on a first side of the bridge die to enable the interconnecting.

11. The package of claim 10, in which the bridge die is disposed at least partially on first sides of the first die and the second die.

12. The package of claim 10, in which the bridge die further comprises active circuitry on the first side.

13. The package of claim 10, further comprising a plurality of contact pads on the second side of the bridge die contacting corresponding contact pads on first sides of the first and second dies.

14. The package of claim 10, in which at least one of the first and second die comprise:

a flip-chip die having circuitry disposed on a second side, the flip-chip die being coupled to the substrate by ball bonding, solder bump bonding or conductive paste; and

flip-chip through vias extending from the first side to the second side of the flip-chip die;

the flip-chip through vias being filled with conductive material to couple conductive lines on the second side to at least one contact pad on the first side of the flip-chip die.

15. The package of claim 10, in which at least one of the first and second die comprise circuitry disposed on the first side of the first and second die.

16. The package of claim 10, further comprising:

at least one additional die stacked on the bridge die, the at least one additional die further comprising at least one of passive, active and interconnect circuitry.

17. The package of claim 10, in which the bridge die is fabricated using a process flow that is different from a process flow corresponding to at least one of the first and the second dies.

18. The package of claim 10, integrated into at least one of a cell phone, hand-held personal communication systems (PCS) units, and portable data unit, and fixed location data unit.

19. An integrated circuit package comprising:

a first die disposed on a substrate;

a second die disposed on the substrate; and

means for interconnecting the first die to the second die, the interconnecting means comprising conductive through vias coupled to conductive lines on a first side of the interconnecting means to enable the interconnecting.

20. The package of claim 19, integrated into at least one of a cell phone, hand-held personal communication systems (PCS) units, and portable data unit, and fixed location data unit.