SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF
First Claim
1. A semiconductor device comprising:
- a photodiode;
a first transistor;
a second transistor;
a third transistor; and
a fourth transistor,wherein a first terminal of the photodiode is electrically connected to a first terminal of the second transistor,wherein a second terminal of the second transistor is electrically connected to a gate of the first transistor and a first terminal of the third transistor,wherein a first terminal of the first transistor is electrically connected to a first terminal of the fourth transistor,wherein in a first period, a charge corresponding to an amount of incident light to the photodiode is accumulated to the gate of the first transistor,wherein in a second period, the charge is retained in the gate of the first transistor while a first voltage is supplied to a gate of the second transistor and a second voltage is supplied to a gate of the third transistor, andwherein a voltage level of the first voltage is lower than a voltage level of the first terminal of the second transistor and a voltage level of the second terminal of the second transistor, and a voltage level of the second voltage is lower than a voltage level of the first terminal of the third transistor and a voltage level of a second terminal of the third transistor.
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Accused Products
Abstract
A semiconductor device includes a photodiode, a first transistor, a second transistor, and a third transistor. The second transistor and the third transistor have a function of retaining a charge accumulated in a gate of the first transistor. In a period during which the second transistor and the third transistor are off, a voltage level of a voltage applied to a gate of the second transistor is set to be lower than a voltage level of a source of the second transistor and a voltage level of a drain of the second transistor, and a voltage level of a voltage applied to a gate of the third transistor is set to be lower than a voltage level of a source of the third transistor and a voltage level of a drain of the third transistor.
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Citations
22 Claims
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1. A semiconductor device comprising:
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a photodiode; a first transistor; a second transistor; a third transistor; and a fourth transistor, wherein a first terminal of the photodiode is electrically connected to a first terminal of the second transistor, wherein a second terminal of the second transistor is electrically connected to a gate of the first transistor and a first terminal of the third transistor, wherein a first terminal of the first transistor is electrically connected to a first terminal of the fourth transistor, wherein in a first period, a charge corresponding to an amount of incident light to the photodiode is accumulated to the gate of the first transistor, wherein in a second period, the charge is retained in the gate of the first transistor while a first voltage is supplied to a gate of the second transistor and a second voltage is supplied to a gate of the third transistor, and wherein a voltage level of the first voltage is lower than a voltage level of the first terminal of the second transistor and a voltage level of the second terminal of the second transistor, and a voltage level of the second voltage is lower than a voltage level of the first terminal of the third transistor and a voltage level of a second terminal of the third transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a photodiode; a first transistor; a second transistor; and a third transistor, wherein a first terminal of the photodiode is electrically connected to a first terminal of the second transistor, wherein a second terminal of the second transistor is electrically connected to a gate of the first transistor and a first terminal of the third transistor, wherein in a first period, a charge corresponding to an amount of incident light to the photodiode is accumulated to the gate of the first transistor, wherein in a second period, the charge is retained in the gate of the first transistor while a first voltage is supplied to a gate of the second transistor and a second voltage is supplied to a gate of the third transistor, and wherein a voltage level of the first voltage is lower than a voltage level of the first terminal of the second transistor and a voltage level of the second terminal of the second transistor, and a voltage level of the second voltage is lower than a voltage level of the first terminal of the third transistor and a voltage level of a second terminal of the third transistor. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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a photodiode; a first transistor; and a second transistor; wherein a first terminal of the photodiode is electrically connected to a first terminal of the second transistor, wherein a second terminal of the second transistor is electrically connected to a gate of the first transistor, wherein in a first period, a charge corresponding to an amount of incident light to the photodiode is accumulated to the gate of the first transistor, wherein in a second period, the charge is retained in the gate of the first transistor while a first voltage is supplied to a gate of the second transistor, and wherein a voltage level of the first voltage is lower than a voltage level of the first terminal of the second transistor and a voltage level of the second terminal of the second transistor. - View Dependent Claims (16, 17, 18)
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19. A driving method of a semiconductor device comprising:
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accumulating a charge to a gate of a first transistor by supplying a first voltage to a first terminal of a photodiode, a second voltage to a gate of a second transistor, and a third voltage to a gate of a third transistor, retaining the charge in the gate of the first transistor by supplying a fourth voltage to the gate of the second transistor and a fifth voltage to the gate of the third transistor, and discharging the charge from the gate of the first transistor by supplying a sixth voltage to the gate of the third transistor and a seventh voltage to a first terminal of the third transistor, wherein the charge corresponds to an amount of incident light to the photodiode, and wherein a voltage level of the fourth voltage is lower than a voltage level of a first terminal of the second transistor and a voltage level of a second terminal of the second transistor, and a voltage level of the fifth voltage is lower than a voltage level of the first terminal of the third transistor and a voltage level of a second terminal of the third transistor in retaining. - View Dependent Claims (20)
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21. A driving method of a semiconductor device comprising:
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accumulating a charge to a gate of a first transistor by supplying a first voltage to a first terminal of a photodiode, and a second voltage to a gate of a second transistor, retaining the charge in the gate of the first transistor by supplying a third voltage to the gate of the second transistor, and discharging the charge from the gate of the first transistor by supplying a fourth voltage to the gate of the second transistor and a fifth voltage to the first terminal of the photodiode, wherein the charge corresponds to an amount of incident light to the photodiode, and wherein a voltage level of the third voltage is lower than a voltage level of a first terminal of the second transistor and a voltage level of a second terminal of the second transistor in retaining. - View Dependent Claims (22)
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Specification