Lithographic Apparatus and Device Manufacturing Method

• US 20110216293A1
• Filed: 01/19/2011
• Published: 09/08/2011
• Est. Priority Date: 02/19/2010
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Padiy, Alexander Viktorovych, Menchtchikov, Boris
• Granted Patent: US 8,687,167 B2
• Time in Patent Office: Days
• US Class Current: 355/52
• CPC Class Codes: G03F 7/70516 Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
• CPC Class Codes: G03F 7/70525 Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
• CPC Class Codes: G03F 7/70616 Monitoring the printed patterns
• CPC Class Codes: G03F 9/7003 Alignment type or strategy, e.g. leveling, global alignment
• CPC Class Codes: G03F 9/7011 Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
• CPC Class Codes: G03F 9/7019 Calibration
• CPC Class Codes: G03F 9/7046 Strategy, e.g. mark, sensor or wavelength selection

Abstract

A method controls a scanning function of a lithographic apparatus. A first alignment strategy is used. A monitor wafer is exposed to determine baseline control parameters pertaining to the scanning function. The baseline control parameters are periodically retrieved from the monitor wafer. Parameter drift is determined from the baseline control parameters. Corrective action is taken based on the determination. A production wafer is exposed using a second alignment strategy, different to the first alignment strategy. The corrective action is modified so as to be substantially closer to the correction that would have been made had the second alignment strategy been used in exposing the monitor wafer.

Claims

1. A lithographic apparatus comprising:

an illumination system configured to condition a radiation beam;

a support configured to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam;

a substrate table configured to hold a substrate;

a projection system configured to project the patterned radiation beam onto a target portion of the substrate,

an alignment apparatus configured to align the substrate according to an alignment strategy, prior to the projection of the patterned radiation beam onto a target portion of the substrate; and

a scanning control module configured to control at least one of the support, substrate table, and projection system by periodically retrieving measurements that define baseline control parameters from one or more monitor wafers to determine a parameter drift from the baseline control, the one or more wafers having been initially exposed using a first alignment strategy;

wherein the apparatus is configured to, when exposing a production substrate using a second alignment strategy different from the first alignment strategy, adjust a correction made for the parameter drift, thereby being substantially closer to the correction that would have been made had the second alignment strategy been used in exposure of the one or more monitor wafers.

2. The apparatus of claim 1, wherein the scanning control module is configured to determine a difference between effects of the second and first alignment strategies during exposure of a substrate and to use the difference to make an adjustment to the correction.

3. The apparatus of claim 2, wherein the scanning control module is configured to determine the difference between the effects of the second and first alignment strategies from:

a determination of the effect of the first alignment strategy on overlay measurements read from at least one monitor wafer and the alignment data measured by the lithographic apparatus when in the process of exposing the at least one monitor wafer; and

a determination, based on the second alignment strategy and the alignment data measured by the lithographic apparatus, of the correction that the second alignment strategy would perform if it had been used in exposing the at least one monitor wafer.

4. The apparatus of claim 3, wherein the scanning control module is configured to determine the difference between the effects of the use of the second and first alignment strategies.

5. The apparatus of claim 4, wherein the scanning control module is configured to propagate the determined difference between the effects of the use of the second and first alignment strategies to at least one of the illumination system, the substrate table, the projection system, and the alignment apparatus.

6. The apparatus of claim 4, wherein the scanning control module is configured to propagate differences between the effects of the use of a number of predetermined alignment strategies and the first alignment strategy to at least one of the illumination system, the substrate table, the projection system, and the alignment apparatus.

7. The apparatus of claim 4, wherein the scanning control module is configured to adjust the baseline control parameters based on the determined difference between the effects of the second and first alignment strategies.

8. The apparatus of claim 3, further comprising a controller module in the lithographic apparatus, wherein the controller module is configured to determine the difference between the effects of the second and first alignment strategies.

9. The apparatus of claim 1, wherein the lithographic apparatus is configured to expose a plurality of monitor wafers using the same alignment strategy.

10. The apparatus of claim 9, wherein the plurality of monitor wafers each include one or more alignment marks, the alignment marks in alignment with alignment marks on production substrates.

11. The apparatus of claim 10, wherein the lithographic apparatus is configured to apply exposure durations for each of the plurality of monitor wafers that are substantially similar to exposure durations for the production substrates.

12. The apparatus of claim 1, wherein the lithographic apparatus is configured to use a plurality of monitor wafers in two sets and to expose the first set of monitor wafers using the first alignment strategy, and to expose the second set of monitor wafers using a plurality of alignment marks so as to accurately map a reference grid for the alignment apparatus.

13. The apparatus of claim 12, wherein the scanning control module is configured to obtain overlay information from the first set of monitor wafers and to obtain information relating to parameter drift of the alignment apparatus from the second set of monitor wafers.

14. The apparatus of claim 13, wherein the lithographic apparatus is configured to apply exposure durations for each of the first set of monitor wafers that are substantially similar to exposure durations for one or more production substrates, while exposure durations for each of the second set of monitor wafers are not based on the exposure durations for the one or more production substrates.

15. A method comprising:

exposing at least one monitor wafer so as to determine baseline control parameters pertaining to a scanning function, the exposure being performed using a first alignment strategy;

periodically retrieving the baseline control parameters from the at least one monitor wafer;

determining parameter drift from the baseline control parameters and making a correction based on the determination;

exposing a production substrate using a second alignment strategy, wherein the alignment strategy is different from the first alignment strategy; and

modifying the correction so as to be substantially closer to an anticipated correction that would have been made had the second alignment strategy been used in exposing the at least one monitor wafer.

16. The method of claim 15, wherein the modifying the correction comprises determining a difference between effects of the second and first alignment strategies during exposure of a substrate and applying the difference to adjust the correction.

17. The method of claim 16, wherein the determining the difference between the effects comprises:

determining the effect of the first alignment strategy on overlay measurements read from the at least one monitor wafer and the alignment data measured by the lithographic apparatus when exposing the at least one monitor wafer; and

determining, based on the second alignment strategy and the alignment data measured by the lithographic apparatus, the correction that the second alignment strategy would perform if it had been used in exposing the at least monitor wafer.

18. The method of claim 17, wherein the determining the difference between the effects comprises using a scanning control module to determine the difference between the effects of the first and second alignment strategies.

19. The method of claim 18, wherein the determining the difference between the effects comprises propagating the determined difference between the effects of the use of the second and first alignment strategies to at least one of the illumination system, the substrate table, the projection system, and the alignment apparatus.

20. The method of claim 18, wherein the determining the difference between the effects comprises propagating differences between the effects of the use of a number of predetermined alignment strategies and the first alignment strategy to at least one of the illumination system, the substrate table, the projection system, and the alignment apparatus.

21. The method of claim 18, wherein the determining the difference between the effects comprises adjusting the baseline control parameters based on the determined difference between the effects of the second and first alignment strategies.

22. The method of claim 17, further comprising determining the difference between the effects of the second and first alignment strategies using a controller module in the lithographic apparatus.

23. The method of claim 15, wherein the exposing at least one monitor wafer comprises exposing a plurality of monitor wafers, wherein each of the monitor wafers is exposed using the same alignment strategy.

24. The method of claim 23, wherein exposing the plurality of monitor wafers comprises exposing the one or more monitor wafers with one or more respective alignment marks, the alignment marks in alignment with alignment marks on production substrates.

25. The method of claim 24, wherein exposing the plurality of monitor wafers comprises exposing the one or more monitor wafers with exposure durations substantially similar to exposure durations of each of production substrates.

26. The method of claim 15, wherein the exposing at least one monitor wafer comprises:

using a plurality of monitor wafers in two sets;

exposing the first set of monitor wafers using the first alignment strategy; and

exposing the second set of monitor wafers using a plurality of alignment marks so as to accurately map a reference grid for an alignment apparatus.

27. The method of claim 26, wherein exposing the first set of monitor wafers comprises obtaining overlay information, and exposing the second set of monitor wafers comprises obtaining information pertaining to parameter drift of the alignment apparatus.

28. The method of claim 27, wherein the exposing at least one monitor wafer comprises using exposure durations for each of the first set of monitor wafers that are substantially similar to exposure durations for one or more production substrates, while the exposure durations of the second set of monitor wafers are not based on the exposure duration for the one or more production substrates.