SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• US 20110216566A1
• Filed: 02/25/2011
• Published: 09/08/2011
• Est. Priority Date: 03/05/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: KAMATA, Koichiro
• Granted Patent: US 9,673,335 B2
• Time in Patent Office: Days
• US Class Current: 363/127
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/0817 Thyristors only
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

In a rectifier circuit, by using a transistor whose off-state current is small as a so-called diode-connected MOS transistor included in the rectifier circuit, breakdown which is caused when a reverse bias is applied is prevented. Thus, an object is to provide a rectifier circuit whose reliability is increased and rectification efficiency is improved. A gate and a drain of a transistor are both connected to a terminal of the rectifier circuit to which an AC signal is input. In the transistor, an oxide semiconductor is used for a channel formation region and the off-state current at room temperature is less than or equal to 10⁻²⁰ A/μm, which is equal to 10 zA/μm (z: zepto), when the source-drain voltage is 3.1 V.

Claims

1. A semiconductor device comprising:

a rectifier circuit comprising;

a transistor;

an input terminal;

a capacitor; and

an output terminal,

wherein a gate of the transistor and one of a source and a drain of the transistor are electrically connected to the input terminal,

wherein the other of the source and the drain of the transistor and an electrode of the capacitor are electrically connected to the output terminal,

wherein the transistor comprises a channel formation region comprising an oxide semiconductor, and

wherein a carrier density in the oxide semiconductor is lower than 1×

10¹⁴/cm³.

2. The rectifier circuit according to claim 1,

wherein off-state current of the transistor at room temperature is less than or equal to 10 zA/μ

m when source-drain voltage is 3.1V.

3. A semiconductor device comprising:

a rectifier circuit comprising;

a first transistor;

a second transistor;

an input terminal;

a first capacitor;

a second capacitor; and

an output terminal,

wherein a first electrode of the first capacitor is electrically connected to the input terminal,

wherein one of a source and a drain of the first transistor, a gate of the first transistor, and one of a source and a drain of the second transistor are electrically connected to a second electrode of the first capacitor,

wherein the other of the source and the drain of the first transistor and a first electrode of the second capacitor are electrically connected to the output terminal,

wherein a gate of the second transistor, and the other of the source and the drain of the second transistor are electrically connected to a second electrode of the second capacitor,

wherein each of the first transistor and the second transistor comprises a channel formation region comprising an oxide semiconductor, and

wherein a carrier density in the oxide semiconductor is lower than 1×

10¹⁴/cm³.

4. The rectifier circuit according to claim 3,

wherein off-state current of each of the first transistor and the second transistor at room temperature is less than or equal to 10 zA/μ

m when source-drain voltage is 3.1 V.

5. A wireless communication device comprising:

an antenna, and

a rectifier circuit comprising;

a transistor;

an input terminal;

a capacitor; and

an output terminal,

wherein a gate of the transistor and one of a source and a drain of the transistor are electrically connected to the input terminal,

wherein the other of the source and the drain of the transistor and an electrode of the capacitor are electrically connected to the output terminal,

wherein the transistor comprises a channel formation region comprising an oxide semiconductor,

wherein a carrier density in the oxide semiconductor is lower than 1×

10¹⁴/cm³, and

wherein an AC signal received by the antenna is inputted into the input terminal.

6. The rectifier circuit according to claim 5,

wherein off-state current of the transistor at room temperature is less than or equal to 10 zA/μ

m when source-drain voltage is 3.1 V.

7. A wireless communication device comprising:

an antenna, and

a rectifier circuit comprising;

a first transistor;

a second transistor;

an input terminal;

a first capacitor;

a second capacitor; and

an output terminal,

wherein a first electrode of the first capacitor is electrically connected to the input terminal,

wherein one of a source and a drain of the first transistor, a gate of the first transistor, and one of a source and a drain of the second transistor are electrically connected to a second electrode of the first capacitor,

wherein the other of the source and the drain of the first transistor and a first electrode of the second capacitor are electrically connected to the output terminal,

wherein a gate of the second transistor, and the other of the source and the drain of the second transistor are electrically connected to a second electrode of the second capacitor,

wherein each of the first transistor and the second transistor comprises a channel formation region comprising an oxide semiconductor,

wherein a carrier density in the oxide semiconductor is lower than 1×

10¹⁴/cm³, and

wherein an AC signal received by the antenna is inputted into the input terminal.

8. The rectifier circuit according to claim 7,

wherein off-state current of each of the first transistor and the second transistor at room temperature is less than or equal to 10 zA/μ

m when source-drain voltage is 3.1 V.

9. A method for manufacturing a semiconductor device comprising a rectifier circuit, the rectifier circuit comprising a transistor, an input terminal, a capacitor, and an output terminal,

wherein a gate of the transistor and one of a source and a drain of the transistor are electrically connected to the input terminal, and

wherein the other of the source and the drain of the transistor and an electrode of the capacitor are electrically connected to the output terminal,

the method comprising the steps of:

forming a first oxide semiconductor;

performing first heat treatment for removing hydrogen, water, and a hydroxyl group on the first oxide semiconductor so that a second oxide semiconductor is formed;

performing second heat treatment for repairing oxygen deficiency in the second oxide semiconductor in an oxygen atmosphere or an atmosphere comprising nitrogen and oxygen, successively to the first heat treatment, so that a third oxide semiconductor is formed; and

forming the transistor comprising a channel formation region comprising the third oxide semiconductor.

10. A method for manufacturing a semiconductor device comprising a rectifier circuit, the rectifier circuit comprising a first transistor, a second transistor, an input terminal, a first capacitor, a second capacitor, and an output terminal,

wherein a first electrode of the first capacitor is electrically connected to the input terminal,

wherein one of a source and a drain of the first transistor, a gate of the first transistor, and one of a source and a drain of the second transistor are electrically connected to a second electrode of the first capacitor,

wherein the other of the source and the drain of the first transistor and a first electrode of the second capacitor are electrically connected to the output terminal, and

wherein a gate of the second transistor, and the other of the source and the drain of the second transistor are electrically connected to a second electrode of the second capacitor,

the method comprising the steps of:

forming a first oxide semiconductor;

performing first heat treatment for removing hydrogen, water, and a hydroxyl group on the first oxide semiconductor so that a second oxide semiconductor is formed;

performing second heat treatment for repairing oxygen deficiency in the second oxide semiconductor in an oxygen atmosphere or an atmosphere comprising nitrogen and oxygen, successively to the first heat treatment, so that a third oxide semiconductor is formed; and

forming the first transistor and the second transistor each comprising a channel formation region comprising the third oxide semiconductor.

11. A method for manufacturing a wireless communication device comprising a rectifier circuit and an antenna, the rectifier circuit comprising a transistor, an input terminal, a capacitor, and an output terminal,

wherein a gate of the transistor and one of a source and a drain of the transistor are electrically connected to the input terminal,

wherein the other of the source and the drain of the transistor and an electrode of the capacitor are electrically connected to the output terminal, and

wherein an AC signal is a signal received by the antenna,

the method comprising the steps of:

forming a first oxide semiconductor;

performing first heat treatment for removing hydrogen, water, and a hydroxyl group on the first oxide semiconductor so that a second oxide semiconductor is formed;

performing second heat treatment for repairing oxygen deficiency in the second oxide semiconductor in an oxygen atmosphere or an atmosphere comprising nitrogen and oxygen, successively to the first heat treatment, so that a third oxide semiconductor is formed; and

forming the transistor comprising a channel formation region comprising the third oxide semiconductor.

12. A method for manufacturing a wireless communication device comprising a rectifier circuit and antenna, the rectifier circuit comprising a first transistor, a second transistor, an input terminal, a first capacitor, a second capacitor, and an output terminal,

wherein a first electrode of the first capacitor is electrically connected to the input terminal,

wherein one of a source and a drain of the first transistor, a gate of the first transistor, and one of a source and a drain of the second transistor are electrically connected to a second electrode of the first capacitor,

wherein the other of the source and the drain of the first transistor and a first electrode of the second capacitor are electrically connected to the output terminal,

wherein a gate of the second transistor, and the other of the source and the drain of the second transistor are electrically connected to a second electrode of the second capacitor, and

wherein an AC signal is a signal received by the antenna,

the method comprising the steps of:

forming a first oxide semiconductor;

performing first heat treatment for removing hydrogen, water, and a hydroxyl group on the first oxide semiconductor so that a second oxide semiconductor is formed;

performing second heat treatment for repairing oxygen deficiency in the second oxide semiconductor in an oxygen atmosphere or an atmosphere comprising nitrogen and oxygen, successively to the first heat treatment, so that a third oxide semiconductor is formed; and

forming the first transistor and the second transistor each comprising a channel formation region comprising the third oxide semiconductor.