MANUFACTURING METHOD OF OXIDE SEMICONDUCTOR FILM AND MANUFACTURING METHOD OF TRANSISTOR

• US 20110217815A1
• Filed: 02/25/2011
• Published: 09/08/2011
• Est. Priority Date: 03/05/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: NONAKA, Yusuke, HONDA, Tatsuya, OMATA, Takatsugu
• Granted Patent: US 8,703,531 B2
• Time in Patent Office: Days
• US Class Current: 438/158
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02472 Oxides
• CPC Class Codes: H01L 21/02483 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02614 Transformation of metal, e.g. oxidation, nitridation
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An object is to provide a manufacturing method of an oxide semiconductor film with high crystallinity. Another object is to provide a manufacturing method of a transistor with high field effect mobility. In a manufacturing method of an oxide semiconductor film, an oxide semiconductor film is formed over a substrate in an atmosphere in which oxygen is purposely not contained, and then the oxide semiconductor film is crystallized by a heat treatment in an atmosphere containing oxygen.

Claims

1. A manufacturing method of an oxide semiconductor film, comprising the steps of:

forming an oxide semiconductor film over a substrate in an atmosphere in which oxygen is purposely not contained; and

crystallizing the oxide semiconductor film by performing a heat treatment in an atmosphere containing oxygen.

2. The manufacturing method of an oxide semiconductor film according to claim 1, wherein the oxide semiconductor film is selected from an In—

Sn—

Ga—

Zn—

O-based oxide semiconductor, an In—

Ga—

Zn—

O-based oxide semiconductor, an In—

Sn—

Zn—

O-based oxide semiconductor, an In—

Al—

Zn—

O-based oxide semiconductor, an Sn—

Ga—

Zn—

O-based oxide semiconductor, an Al—

Ga—

Zn—

O-based oxide semiconductor, an Sn—

Al—

Zn—

O-based oxide semiconductor, an In—

Zn—

O-based oxide semiconductor, an Sn—

Zn—

O-based oxide semiconductor, Al—

Zn—

O-based oxide semiconductor, an In—

O-based oxide semiconductor, and an Sn—

O-based oxide semiconductor, an Zn—

O-based oxide semiconductor.

3. The manufacturing method of an oxide semiconductor film according to claim 1, wherein the oxide semiconductor film has a c-axis orientation with respect to a surface of the substrate.

4. The manufacturing method of an oxide semiconductor film according to claim 1, wherein a carrier density of the oxide semiconductor film is less than 1×

10¹⁴/cm³.

5. The manufacturing method of an oxide semiconductor film according to claim 1, wherein the oxide semiconductor film is formed while the substrate is heated.

6. The manufacturing method of an oxide semiconductor film according to claim 1, wherein the atmosphere in which oxygen is purposely not contained is an atmosphere of nitrogen gas, helium gas, neon gas, argon gas, xenon gas, or krypton gas.

7. The manufacturing method of an oxide semiconductor film according to claim 1, wherein the oxide semiconductor film is formed by a sputtering method under a condition in which oxygen gas is not supplied.

8. A manufacturing method of an oxide semiconductor film, comprising the steps of:

forming a first oxide semiconductor film over a substrate;

crystallizing the first oxide semiconductor film by performing a first heat treatment;

forming a second oxide semiconductor film over the crystallized first oxide semiconductor film in an atmosphere in which oxygen in purposely not contained; and

crystallizing the second oxide semiconductor film by performing a second heat treatment in an atmosphere containing oxygen.

9. The manufacturing method of an oxide semiconductor film according to claim 8, wherein the first oxide semiconductor film is formed in an atmosphere in which oxygen is purposely not contained.

10. The manufacturing method of an oxide semiconductor film according to claim 8, wherein the first oxide semiconductor film that is crystallized in the first heat treatment is used as a seed crystal by the second oxide semiconductor film that is to be crystallized in the second heat treatment.

11. The manufacturing method of an oxide semiconductor film according to claim 8, wherein at least one of the first oxide semiconductor film and the second oxide semiconductor film is selected from an In—

Sn—

Ga—

Zn—

O-based oxide semiconductor, an In—

Ga—

Zn—

O-based oxide semiconductor, an In—

Sn—

Zn—

O-based oxide semiconductor, an In—

Al—

Zn—

O-based oxide semiconductor, an Sn—

Ga—

Zn—

O-based oxide semiconductor, an Al—

Ga—

Zn—

O-based oxide semiconductor, an Sn—

Al—

Zn—

O-based oxide semiconductor, an In—

Zn—

O-based oxide semiconductor, an Sn—

Zn—

O-based oxide semiconductor, Al—

Zn—

O-based oxide semiconductor, an In—

O-based oxide semiconductor, and an Sn—

O-based oxide semiconductor, an Zn—

O-based oxide semiconductor.

12. The manufacturing method of an oxide semiconductor film according to claim 8, wherein the first oxide semiconductor film and the second oxide semiconductor film have a c-axis orientation with respect to a surface of the substrate.

13. The manufacturing method of an oxide semiconductor film according to claim 8, wherein a carrier density of the first oxide semiconductor film and the second oxide semiconductor film is less than 1×

10¹⁴/cm³.

14. The manufacturing method of an oxide semiconductor film according to claim 8, wherein at least one of the first oxide semiconductor film and the second oxide semiconductor film is formed while the substrate is heated.

15. The manufacturing method of an oxide semiconductor film according to claim 8, wherein the atmosphere in which oxygen is purposely not contained is an atmosphere of nitrogen gas, helium gas, neon gas, argon gas, xenon gas, or krypton gas.

16. The manufacturing method of an oxide semiconductor film according to claim 8, wherein the second oxide semiconductor film is formed by a sputtering method under a condition in which oxygen gas is not supplied.

17. A manufacturing method of an oxide semiconductor film, comprising the steps of:

forming a first oxide semiconductor film over a substrate;

forming a second oxide semiconductor film over the first oxide semiconductor film in an atmosphere in which oxygen is purposely not contained; and

performing a heat treatment in which heating is done at a first temperature and a second temperature in an atmosphere containing oxygen, wherein the first oxide semiconductor film is crystallized at the first temperature and the second oxide semiconductor film is crystallized at the second temperature, and the first temperature is lower than the second temperature.

18. The manufacturing method of an oxide semiconductor film according to claim 17, wherein the first oxide semiconductor film is formed in an atmosphere in which oxygen is purposely not contained.

19. The manufacturing method of an oxide semiconductor film according to claim 17, wherein the first oxide semiconductor film that is crystallized at the first temperature is used as a seed crystal by the second oxide semiconductor film that is to be crystallized at the second temperature.

20. A manufacturing method of a transistor, comprising the steps of:

forming a gate electrode over a substrate;

forming a gate insulating film over the gate electrode;

forming an oxide semiconductor film over the gate insulating film in an atmosphere in which oxygen is purposely not contained;

crystallizing the oxide semiconductor film by performing a first heat treatment in an atmosphere containing oxygen;

forming a source electrode and a drain electrode over the crystallized oxide semiconductor film;

forming an insulating film containing an oxygen atom over the crystallized oxide semiconductor film, the source electrode and the drain electrode; and

oxidizing the crystallized oxide semiconductor film by performing a second heat treatment.

21. The manufacturing method of a transistor according to claim 20, wherein the oxide semiconductor film is selected from an In—

Sn—

Ga—

Zn—

O-based oxide semiconductor, an In—

Ga—

Zn—

O-based oxide semiconductor, an In—

Sn—

Zn—

O-based oxide semiconductor, an In—

Al—

Zn—

O-based oxide semiconductor, an Sn—

Ga—

Zn—

O-based oxide semiconductor, an Al—

Ga—

Zn—

O-based oxide semiconductor, an Sn—

Al—

Zn—

O-based oxide semiconductor, an In—

Zn—

O-based oxide semiconductor, an Sn—

Zn—

O-based oxide semiconductor, Al—

Zn—

O-based oxide semiconductor, an In—

O-based oxide semiconductor, and an Sn—

O-based oxide semiconductor, an Zn—

O-based oxide semiconductor.

22. The manufacturing method of a transistor according to claim 20, wherein the oxide semiconductor film has a c-axis orientation with respect to a surface of the substrate.

23. The manufacturing method of a transistor according to claim 20, wherein a carrier density of the oxide semiconductor film is less than 1×

10¹⁴/cm³.

24. The manufacturing method of a transistor according to claim 20, wherein the oxide semiconductor film is formed while the substrate is heated.

25. The manufacturing method of a transistor according to claim 20, wherein the atmosphere in which oxygen is purposely not contained is an atmosphere of nitrogen gas, helium gas, neon gas, argon gas, xenon gas, or krypton gas.

26. The manufacturing method of an oxide semiconductor film according to claim 20, wherein the oxide semiconductor film is formed by a sputtering method under a condition in which oxygen gas is not supplied.

27. A manufacturing method of a transistor, comprising the steps of:

forming a gate electrode over a substrate;

forming a gate insulating film over the gate electrode;

forming a first oxide semiconductor film over the gate insulating film;

crystallizing the first oxide semiconductor film by performing a first heat treatment;

forming a second oxide semiconductor film over the crystallized first oxide semiconductor film in an atmosphere in which oxygen is purposely not contained;

crystallizing the second oxide semiconductor film by performing a second heat treatment in an atmosphere containing oxygen;

forming a source electrode and a drain electrode over the crystallized second oxide semiconductor film;

forming an insulating film containing an oxygen atom over the crystallized second oxide semiconductor film, the source electrode and the drain electrode; and

oxidizing the crystallized first oxide semiconductor film and the crystallized second oxide semiconductor film by performing a third heat treatment.

28. The manufacturing method of a transistor according to claim 27, wherein the first oxide semiconductor film is formed in an atmosphere in which oxygen is purposely not contained.

29. The manufacturing method of a transistor according to claim 27, wherein the first oxide semiconductor film that is crystallized by the first heat treatment is used as a seed crystal by the second oxide semiconductor film that is to be crystallized by the second heat treatment.

30. The manufacturing method of an oxide semiconductor film according to claim 27, wherein at least one of the first oxide semiconductor film and the second oxide semiconductor film is selected from an In—

Sn—

Ga—

Zn—

O-based oxide semiconductor, an In—

Ga—

Zn—

O-based oxide semiconductor, an In—

Sn—

Zn—

O-based oxide semiconductor, an In—

Al—

Zn—

O-based oxide semiconductor, an Sn—

Ga—

Zn—

O-based oxide semiconductor, an Al—

Ga—

Zn—

O-based oxide semiconductor, an Sn—

Al—

Zn—

O-based oxide semiconductor, an In—

Zn—

O-based oxide semiconductor, an Sn—

Zn—

O-based oxide semiconductor, Al—

Zn—

O-based oxide semiconductor, an In—

O-based oxide semiconductor, and an Sn—

O-based oxide semiconductor, an Zn—

O-based oxide semiconductor.

31. The manufacturing method of an oxide semiconductor film according to claim 27, wherein the first oxide semiconductor film and the second oxide semiconductor film have a c-axis orientation with respect to a surface of the substrate.

32. The manufacturing method of an oxide semiconductor film according to claim 27, wherein a carrier density of the first oxide semiconductor film and the second oxide semiconductor film is less than 1×

10¹⁴/cm³.

33. The manufacturing method of an oxide semiconductor film according to claim 27, wherein at least one of the first oxide semiconductor film and the second oxide semiconductor film is formed while the substrate is heated.

34. The manufacturing method of an oxide semiconductor film according to claim 27, wherein the atmosphere in which oxygen is purposely not contained is an atmosphere of nitrogen gas, helium gas, neon gas, argon gas, xenon gas, or krypton gas.

35. The manufacturing method of an oxide semiconductor film according to claim 27, wherein the second oxide semiconductor film is formed by a sputtering method under a condition in which oxygen gas is not supplied.

36. A manufacturing method of a transistor, comprising the steps of:

forming a gate electrode over a substrate;

forming a gate insulating film over the gate electrode;

forming a first oxide semiconductor film over the gate insulating film;

forming a second oxide semiconductor film over the first oxide semiconductor film in an atmosphere in which oxygen is purposely not contained;

performing a first heat treatment in which heating is done at a first temperature and a second temperature that is lower than the first temperature in an atmosphere containing oxygen to crystallize the first oxide semiconductor film at the first temperature and to crystallize the second oxide semiconductor film at the second temperature;

forming a source electrode and a drain electrode over the crystallized first oxide semiconductor film and the crystallized second oxide semiconductor film;

forming an insulating film containing an oxygen atom over the crystallized first oxide semiconductor film, the crystallized second oxide semiconductor film, the source electrode and the drain electrode; and

oxidizing the crystallized first oxide semiconductor film and the second oxide semiconductor film by performing a second heat treatment.

37. The manufacturing method of a transistor according to claim 36, wherein the first oxide semiconductor film is formed in an atmosphere in which oxygen is purposely not contained.

38. The manufacturing method of a transistor according to claim 36, wherein the first oxide semiconductor film that is crystallized at the first temperature is used as a seed crystal by the second oxide semiconductor film that is to be crystallized at the second temperature.