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MANUFACTURING METHOD OF OXIDE SEMICONDUCTOR FILM AND MANUFACTURING METHOD OF TRANSISTOR

  • US 20110217815A1
  • Filed: 02/25/2011
  • Published: 09/08/2011
  • Est. Priority Date: 03/05/2010
  • Status: Active Grant
First Claim
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1. A manufacturing method of an oxide semiconductor film, comprising the steps of:

  • forming an oxide semiconductor film over a substrate in an atmosphere in which oxygen is purposely not contained; and

    crystallizing the oxide semiconductor film by performing a heat treatment in an atmosphere containing oxygen.

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