MANUFACTURING METHOD OF OXIDE SEMICONDUCTOR FILM AND MANUFACTURING METHOD OF TRANSISTOR
First Claim
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1. A manufacturing method of an oxide semiconductor film, comprising the steps of:
- forming an oxide semiconductor film over a substrate in an atmosphere in which oxygen is purposely not contained; and
crystallizing the oxide semiconductor film by performing a heat treatment in an atmosphere containing oxygen.
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Abstract
An object is to provide a manufacturing method of an oxide semiconductor film with high crystallinity. Another object is to provide a manufacturing method of a transistor with high field effect mobility. In a manufacturing method of an oxide semiconductor film, an oxide semiconductor film is formed over a substrate in an atmosphere in which oxygen is purposely not contained, and then the oxide semiconductor film is crystallized by a heat treatment in an atmosphere containing oxygen.
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Citations
38 Claims
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1. A manufacturing method of an oxide semiconductor film, comprising the steps of:
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forming an oxide semiconductor film over a substrate in an atmosphere in which oxygen is purposely not contained; and crystallizing the oxide semiconductor film by performing a heat treatment in an atmosphere containing oxygen. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A manufacturing method of an oxide semiconductor film, comprising the steps of:
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forming a first oxide semiconductor film over a substrate; crystallizing the first oxide semiconductor film by performing a first heat treatment; forming a second oxide semiconductor film over the crystallized first oxide semiconductor film in an atmosphere in which oxygen in purposely not contained; and crystallizing the second oxide semiconductor film by performing a second heat treatment in an atmosphere containing oxygen. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
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17. A manufacturing method of an oxide semiconductor film, comprising the steps of:
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forming a first oxide semiconductor film over a substrate; forming a second oxide semiconductor film over the first oxide semiconductor film in an atmosphere in which oxygen is purposely not contained; and performing a heat treatment in which heating is done at a first temperature and a second temperature in an atmosphere containing oxygen, wherein the first oxide semiconductor film is crystallized at the first temperature and the second oxide semiconductor film is crystallized at the second temperature, and the first temperature is lower than the second temperature. - View Dependent Claims (18, 19)
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20. A manufacturing method of a transistor, comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film over the gate insulating film in an atmosphere in which oxygen is purposely not contained; crystallizing the oxide semiconductor film by performing a first heat treatment in an atmosphere containing oxygen; forming a source electrode and a drain electrode over the crystallized oxide semiconductor film; forming an insulating film containing an oxygen atom over the crystallized oxide semiconductor film, the source electrode and the drain electrode; and oxidizing the crystallized oxide semiconductor film by performing a second heat treatment. - View Dependent Claims (21, 22, 23, 24, 25, 26)
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27. A manufacturing method of a transistor, comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming a first oxide semiconductor film over the gate insulating film; crystallizing the first oxide semiconductor film by performing a first heat treatment; forming a second oxide semiconductor film over the crystallized first oxide semiconductor film in an atmosphere in which oxygen is purposely not contained; crystallizing the second oxide semiconductor film by performing a second heat treatment in an atmosphere containing oxygen; forming a source electrode and a drain electrode over the crystallized second oxide semiconductor film; forming an insulating film containing an oxygen atom over the crystallized second oxide semiconductor film, the source electrode and the drain electrode; and oxidizing the crystallized first oxide semiconductor film and the crystallized second oxide semiconductor film by performing a third heat treatment. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35)
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36. A manufacturing method of a transistor, comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming a first oxide semiconductor film over the gate insulating film; forming a second oxide semiconductor film over the first oxide semiconductor film in an atmosphere in which oxygen is purposely not contained; performing a first heat treatment in which heating is done at a first temperature and a second temperature that is lower than the first temperature in an atmosphere containing oxygen to crystallize the first oxide semiconductor film at the first temperature and to crystallize the second oxide semiconductor film at the second temperature; forming a source electrode and a drain electrode over the crystallized first oxide semiconductor film and the crystallized second oxide semiconductor film; forming an insulating film containing an oxygen atom over the crystallized first oxide semiconductor film, the crystallized second oxide semiconductor film, the source electrode and the drain electrode; and oxidizing the crystallized first oxide semiconductor film and the second oxide semiconductor film by performing a second heat treatment. - View Dependent Claims (37, 38)
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Specification