MANUFACTURING METHOD OF GALLIUM OXIDE SINGLE CRYSTAL

• US 20110220011A1
• Filed: 03/08/2011
• Published: 09/15/2011
• Est. Priority Date: 03/12/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: NONAKA, Yusuke, OMATA, Takatsugu, MIYANAGA, Akiharu, HONDA, Tatsuya
• Granted Patent: US 8,900,362 B2
• Time in Patent Office: Days
• US Class Current: 117/8
• CPC Class Codes: C30B 1/04 Isothermal recrystallisation
• CPC Class Codes: C30B 29/16 Oxides

Abstract

A method of growing a single crystal of gallium oxide at a lower temperature than the melting point (1900° C.) of gallium oxide is provided. A compound film (hereinafter referred to as “gallium oxide compound film”) containing Ga atoms, O atoms, and atoms or molecules that easily sublimate, is heated to sublimate the atoms or molecules that easily sublimate from inside the gallium oxide compound film, thereby growing a single crystal of gallium oxide with a heat energy that is lower than a binding energy of gallium oxide.

Claims

1. A manufacturing method of a gallium oxide single crystal, comprising the steps of:

forming a first metal oxide film over a first single crystal substrate;

forming a first gallium oxide compound film comprising a metal, over the first metal oxide film;

forming a second metal oxide film over a second single crystal substrate;

forming a second gallium oxide compound film over the second metal oxide film; and

performing a heating treatment while the second single crystal substrate is positioned over the first gallium oxide compound film in a manner that the first gallium oxide compound film and the second gallium oxide compound film face each other with space between the first gallium oxide compound film and the second gallium oxide compound film, to obtain a gallium oxide single crystal over the first single crystal substrate from at least a part of the first gallium oxide compound film.

2. The manufacturing method of a gallium oxide single crystal according to claim 1, wherein each of the first metal oxide film and the second metal oxide film is a zinc oxide film or an oxide film containing zinc oxide and one or both of indium and gallium.

3. The manufacturing method of a gallium oxide single crystal according to claim 1, wherein the metal is at least one of indium and zinc.

4. The manufacturing method of a gallium oxide single crystal according to claim 1, wherein the second gallium oxide compound film comprises at least one of indium and zinc.

5. The manufacturing method of a gallium oxide single crystal according to claim 1, wherein the first single crystal substrate and the second single crystal substrate are formed using the same material.

6. The manufacturing method of a gallium oxide single crystal according to claim 1, wherein compositions of the first gallium oxide compound film and the second gallium oxide compound film are the same.

7. The manufacturing method of a gallium oxide single crystal according to claim 1, wherein each of the first single crystal substrate and the second single crystal substrate is an yttria-stabilized zirconia substrate, a sapphire substrate, or an aluminum nitride substrate.

8. The manufacturing method of a gallium oxide single crystal according to claim 1, wherein the gallium oxide single crystal is obtained by sublimating the metal in the first gallium oxide compound film by the heating treatment.

9. The manufacturing method of a gallium oxide single crystal according to claim 1, wherein the heating treatment is performed at a temperature of equal to or higher than 1000°

C. to lower than 1900°

C.

10. A manufacturing method of a gallium oxide single crystal, comprising the steps of:

forming a first metal oxide film over a first single crystal substrate;

forming a first gallium oxide compound film comprising a metal, over the first metal oxide film;

forming a second gallium oxide compound film over a second single crystal substrate; and

performing a heating treatment while the second single crystal substrate is positioned over the first gallium oxide compound film in a manner that the first gallium oxide compound film and the second gallium oxide compound film face each other with space between the first gallium oxide compound film and the second gallium oxide compound film, to obtain a gallium oxide single crystal over the first single crystal substrate from at least a part of the first gallium oxide compound film.

11. The manufacturing method of a gallium oxide single crystal according to claim 10, wherein the first metal oxide film is a zinc oxide film or an oxide film containing zinc oxide and one or both of indium and gallium.

12. The manufacturing method of a gallium oxide single crystal according to claim 10, wherein the metal is at least one of indium and zinc.

13. The manufacturing method of a gallium oxide single crystal according to claim 10, wherein the second gallium oxide compound film comprises at least one of indium and zinc.

14. The manufacturing method of a gallium oxide single crystal according to claim 10, wherein the first single crystal substrate and the second single crystal substrate are formed using the same material.

15. The manufacturing method of a gallium oxide single crystal according to claim 10, wherein compositions of the first gallium oxide compound film and the second gallium oxide compound film are the same.

16. The manufacturing method of a gallium oxide single crystal according to claim 10, wherein each of the first single crystal substrate and the second single crystal substrate is a yttria-stabilized zirconia substrate, a sapphire substrate, or an aluminum nitride substrate.

17. The manufacturing method of a gallium oxide single crystal according to claim 10, wherein the gallium oxide single crystal is obtained by sublimating the metal in the first gallium oxide compound film by the heating treatment.

18. The manufacturing method of a gallium oxide single crystal according to claim 10, wherein the heating treatment is performed at a temperature of equal to or higher than 1000°

C. to lower than 1900°

C.

19. A manufacturing method of a gallium oxide single crystal comprising the steps of:

forming a first gallium oxide compound film comprising a metal, over a first single crystal substrate;

forming a second gallium oxide compound film over a second single crystal substrate; and

performing a heating treatment while the second single crystal substrate is positioned over the first gallium oxide compound film in a manner that the first gallium oxide compound film and the second gallium oxide compound film face each other with space between the first gallium oxide compound film and the second gallium oxide compound film, to obtain a gallium oxide single crystal over the first single crystal substrate from at least a part of the first gallium oxide compound film.

20. The manufacturing method of a gallium oxide single crystal according to claim 19, wherein the metal is at least one of indium and zinc.

21. The manufacturing method of a gallium oxide single crystal according to claim 19, wherein the second gallium oxide compound film comprises at least one of indium and zinc.

22. The manufacturing method of a gallium oxide single crystal according to claim 19, wherein the first single crystal substrate and the second single crystal substrate are formed using the same material.

23. The manufacturing method of a gallium oxide single crystal according to claim 19, wherein compositions of the first gallium oxide compound film and the second gallium oxide compound film are the same.

24. The manufacturing method of a gallium oxide single crystal according to claim 19, wherein each of the first single crystal substrate and the second single crystal substrate is an yttria-stabilized zirconia substrate, a sapphire substrate, or an aluminum nitride substrate.

25. The manufacturing method of a gallium oxide single crystal according to claim 19, wherein the gallium oxide single crystal is obtained by removing the metal in the first gallium oxide compound film by the heating treatment.

26. The manufacturing method of a gallium oxide single crystal according to claim 25, wherein the removing of the metal is performed by sublimating the metal.

27. The manufacturing method of a gallium oxide single crystal according to claim 19, wherein the heating treatment is performed at a temperature of equal to or higher than 1000°

C. to lower than 1900°

C.