MANUFACTURING METHOD OF GALLIUM OXIDE SINGLE CRYSTAL
First Claim
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1. A manufacturing method of a gallium oxide single crystal, comprising the steps of:
- forming a first metal oxide film over a first single crystal substrate;
forming a first gallium oxide compound film comprising a metal, over the first metal oxide film;
forming a second metal oxide film over a second single crystal substrate;
forming a second gallium oxide compound film over the second metal oxide film; and
performing a heating treatment while the second single crystal substrate is positioned over the first gallium oxide compound film in a manner that the first gallium oxide compound film and the second gallium oxide compound film face each other with space between the first gallium oxide compound film and the second gallium oxide compound film, to obtain a gallium oxide single crystal over the first single crystal substrate from at least a part of the first gallium oxide compound film.
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Abstract
A method of growing a single crystal of gallium oxide at a lower temperature than the melting point (1900° C.) of gallium oxide is provided. A compound film (hereinafter referred to as “gallium oxide compound film”) containing Ga atoms, O atoms, and atoms or molecules that easily sublimate, is heated to sublimate the atoms or molecules that easily sublimate from inside the gallium oxide compound film, thereby growing a single crystal of gallium oxide with a heat energy that is lower than a binding energy of gallium oxide.
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Citations
27 Claims
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1. A manufacturing method of a gallium oxide single crystal, comprising the steps of:
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forming a first metal oxide film over a first single crystal substrate; forming a first gallium oxide compound film comprising a metal, over the first metal oxide film; forming a second metal oxide film over a second single crystal substrate; forming a second gallium oxide compound film over the second metal oxide film; and performing a heating treatment while the second single crystal substrate is positioned over the first gallium oxide compound film in a manner that the first gallium oxide compound film and the second gallium oxide compound film face each other with space between the first gallium oxide compound film and the second gallium oxide compound film, to obtain a gallium oxide single crystal over the first single crystal substrate from at least a part of the first gallium oxide compound film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A manufacturing method of a gallium oxide single crystal, comprising the steps of:
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forming a first metal oxide film over a first single crystal substrate; forming a first gallium oxide compound film comprising a metal, over the first metal oxide film; forming a second gallium oxide compound film over a second single crystal substrate; and performing a heating treatment while the second single crystal substrate is positioned over the first gallium oxide compound film in a manner that the first gallium oxide compound film and the second gallium oxide compound film face each other with space between the first gallium oxide compound film and the second gallium oxide compound film, to obtain a gallium oxide single crystal over the first single crystal substrate from at least a part of the first gallium oxide compound film. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A manufacturing method of a gallium oxide single crystal comprising the steps of:
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forming a first gallium oxide compound film comprising a metal, over a first single crystal substrate; forming a second gallium oxide compound film over a second single crystal substrate; and performing a heating treatment while the second single crystal substrate is positioned over the first gallium oxide compound film in a manner that the first gallium oxide compound film and the second gallium oxide compound film face each other with space between the first gallium oxide compound film and the second gallium oxide compound film, to obtain a gallium oxide single crystal over the first single crystal substrate from at least a part of the first gallium oxide compound film. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27)
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Specification