Transflective Liquid Crystal Display Device and Method of Fabricating the Same
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Abstract
An array substrate for a transflective liquid crystal display device includes: a substrate; a gate line and a data line on the substrate, the gate line and the data line crossing each other to define a pixel region including a transmissive area and a reflective area surrounding the transmissive area; a thin film transistor having a gate insulating layer, the thin film transistor electrically connected to the gate line and the data line; a first passivation layer having a drain contact hole exposing a drain electrode of the thin film transistor and a through hole exposing the substrate in the transmissive area; a pixel electrode on the first passivation layer, the pixel electrode contacting the substrate in the transmissive area through the through hole; and a reflective plate on the pixel electrode, the reflective plate being electrically connected to the drain electrode through the drain contact hole and to the pixel electrode.
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Citations
36 Claims
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1-17. -17. (canceled)
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18. A method of fabricating an array substrate for a transflective liquid crystal display device, comprising:
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forming a gate line and a data line on a substrate, the gate line and the data line crossing each other to define a pixel region including a transmissive area and a reflective area surrounding the transmissive area; forming a gate insulating layer between the gate line and the data line; forming a thin film transistor connected to the gate line and the data line; forming a first passivation layer on the thin film transistor, the first passivation layer having a drain contact hole exposing a drain electrode of the thin film transistor and a through hole exposing the gate insulating layer on the substrate in the transmissive area; forming a second passivation layer on the first passivation layer; forming a first photoresist pattern on the second passivation layer, the first photoresist pattern exposing the drain contact hole and the through hole; etching the second passivation layer and the gate insulating layer using the first photoresist pattern as an etch mask such that the drain electrode is exposed through the drain contact hole and the substrate is exposed through the through hole; forming a transparent conductive material layer on the first photoresist pattern; forming a first photoresist layer on the transparent conductive material layer; anisotropically removing the first photoresist layer to form a second photoresist pattern on the transparent conductive material layer in the drain contact hole and the through hole; etching the transparent conductive material layer using the second photoresist pattern as an etch mask to form a drain terminal in the drain contact hole and a pixel electrode in the through hole; removing the first and second photoresist patterns; forming a reflective plate on the drain terminal and the pixel electrode, the reflective plate contacting the drain terminal and the pixel electrode; and forming a third passivation layer between the thin film transistor and the first passivation layer.
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19-25. -25. (canceled)
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26. A method of fabricating an array substrate for a transflective liquid crystal display device, comprising:
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forming a gate line and a data line on a substrate, the gate line and the data line crossing each other to define a pixel region including a transmissive area and a reflective area surrounding the transmissive area; forming a gate insulating layer between the gate line and the data line; forming a thin film transistor connected to the gate line and the data line; forming a first passivation layer on the thin film transistor, the first passivation layer having a drain contact hole exposing a drain electrode of the thin film transistor and a through hole exposing the gate insulating layer on the substrate in the transmissive area; forming a second passivation layer on the first passivation layer; forming a first photoresist pattern on the second passivation layer, the first photoresist pattern exposing the drain contact hole and the through hole; etching the second passivation layer and the gate insulating layer using the first photoresist pattern as an etch mask such that the drain electrode is exposed through the drain contact hole and the substrate is exposed through the through hole; forming a transparent conductive material layer on the first photoresist pattern; forming a first photoresist layer on the transparent conductive material layer; anisotropically removing the first photoresist layer to form a second photoresist pattern on the transparent conductive material layer in the drain contact hole and the through hole; etching the transparent conductive material layer using the second photoresist pattern as an etch mask to form a drain terminal in the drain contact hole and a pixel electrode in the through hole; removing the first and second photoresist patterns; and forming a reflective plate on the drain terminal and the pixel electrode, the reflective plate contacting the drain terminal and the pixel electrode, wherein the forming the thin film transistor includes; forming a gate electrode extending from the gate line; sequentially forming an intrinsic amorphous silicon layer, a doped amorphous silicon layer and a first metal layer on the gate insulating layer; and etching the first metal layer, the doped amorphous silicon layer and the intrinsic amorphous silicon layer to form a semiconductor layer on the gate insulating layer over the gate electrode, a source electrode on the semiconductor layer and the drain electrode spaced apart from the source electrode, and wherein the etching the first metal layer, the doped amorphous silicon layer and the intrinsic amorphous silicon layer comprises; forming a second photoresist layer on the first metal layer; exposing and developing the second photoresist layer using a mask having transmissive region, a blocking region and a half-transmissive region such that a transmittance of the half-transmissive region is greater than a transmittance of the blocking region and smaller than a transmittance of the transmissive region to form a second photoresist pattern corresponding to the gate electrode and a third photoresist pattern corresponding to the source electrode, the drain electrode and the data line, the second photoresist pattern being thinner than the third photoresist pattern; etching the first metal layer, the doped amorphous silicon layer and the intrinsic amorphous silicon layer using the second and third photoresist patterns as an etch mask to form a source-drain pattern and the data line; removing the second photoresist pattern to expose a portion of the source-drain pattern corresponding to the gate electrode; etching the first metal layer and the doped amorphous silicon layer using the third photoresist pattern as an etch mask; and removing the third photoresist pattern.
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27. (canceled)
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28. A method of fabricating an array substrate for a transflective liquid crystal display device, comprising:
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forming a gate line and a data line on a substrate, the gate line and the data line crossing each other to define a pixel region including a transmissive area and a reflective area surrounding the transmissive area; forming a gate insulating layer between the gate line and the data line; forming a thin film transistor connected to the gate line and the data line; forming a first passivation layer on the thin film transistor, the first passivation layer having a drain contact hole exposing a drain electrode of the thin film transistor and a through hole exposing the gate insulating layer on the substrate in the transmissive area; forming a second passivation layer on the first passivation layer; forming a first photoresist pattern on the second passivation layer, the first photoresist pattern exposing the drain contact hole and the through hole; etching the second passivation layer and the gate insulating layer using the first photoresist pattern as an etch mask such that the drain electrode is exposed through the drain contact hole and the substrate is exposed through the through hole; forming a transparent conductive material layer on the first photoresist pattern and on the second passivation layer; changing the crystalline state of the transparent conductive material layer such that the crystalline state of first portions of the transparent conductive material layer on the first passivation layer are different than second portions of the transparent conductive material layer over the first passivation layer; forming a first photoresist layer on the transparent conductive material layer; anisotropically removing the first photoresist layer to form a second photoresist pattern on the transparent conductive material layer in the drain contact hole and the through hole; selectively etching the second portions of the transparent conductive material layer to form a drain terminal the drain contact hole and a pixel electrode in the through hole; removing the first and second photoresist patterns; and forming a reflective plate on the drain terminal and the pixel electrode, the reflective plate contacting the drain terminal and the pixel electrode. - View Dependent Claims (29, 30)
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31. An array substrate for a transflective liquid crystal display device, comprising:
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a substrate; a gate line and a data line on the substrate, the gate line and the data line crossing each other to define a pixel region including a transmissive area and a reflective area surrounding the transmissive area; a thin film transistor electrically connected to the gate line and the data line; a first passivation layer on the thin film transistor, the first passivation layer having a drain contact hole exposing a drain electrode of the thin film transistor and a through hole exposing the substrate in the transmissive area; a pixel electrode contacting the substrate in the transmissive area and a first sidewall of the through hole; a drain terminal contacting the drain electrode and a second sidewall of the drain contact hole; and a reflective plate on the first passivation layer, the reflective plate contacting the pixel electrode on the first sidewall of the through hole and covering the drain terminal. - View Dependent Claims (32, 33, 34, 35, 36)
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Specification