SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

• US 20110220931A1
• Filed: 08/03/2010
• Published: 09/15/2011
• Est. Priority Date: 03/09/2010
• Status: Active Grant

• Current Assignee: Alpad Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Kojima, Akihiro
• Granted Patent: US 8,766,310 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

According to one embodiment, a semiconductor light emitting device includes, a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a first interconnection, and a second interconnection. The first semiconductor layer has a first major surface, a second major surface provided on an opposite side to the first major surface, a protrusion selectively provided on the second major surface, and a trench formed from the second major surface to the first major surface. The second semiconductor layer is stacked on the protrusion of the first semiconductor layer and includes a light emitting layer. The first electrode is provided on the second major surface of the first semiconductor layer and a side surface of the trench. The second electrode is provided on a surface of the second semiconductor layer on an opposite side to the first semiconductor layer.

Claims

1. A semiconductor light emitting device comprising:

a first semiconductor layer having a first major surface, a second major surface provided on an opposite side to the first major surface, a protrusion selectively provided on the second major surface, and a trench formed from the second major surface to the first major surface;

a second semiconductor layer stacked on the protrusion of the first semiconductor layer and including a light emitting layer;

a first electrode provided on the second major surface of the first semiconductor layer and a side surface of the trench;

a second electrode provided on a surface of the second semiconductor layer on an opposite side to the first semiconductor layer;

a first interconnection provided on a surface of the first electrode on an opposite side to the second major surface; and

a second interconnection provided on a surface of the second electrode on an opposite side to the second semiconductor layer.

2. The device of claim 1, wherein the first electrode is provided also at a bottom of the trench.

3. The device of claim 1, wherein the first interconnection is buried inside the first electrode in the trench.

4. The device of claim 1, wherein the protrusion is provided on both sides of the trench in a width direction.

5. The device of claim 1, further comprising:

an insulating film provided on a side surface of the protrusion around the first electrode.

6. The device of claim 1, further comprising:

a first metal pillar provided on a surface of the first interconnection on an opposite side to the first electrode; and

a second metal pillar provided on a surface of the second interconnection on an opposite side to the second electrode.

7. The device of claim 6, further comprising:

a resin covering a periphery of each of the first metal pillar and the second metal pillar.

8. The device of claim 1, further comprising:

a phosphor layer opposed to the first major surface of the first semiconductor layer.

9. A method for manufacturing a semiconductor light emitting device, comprising:

sequentially forming a first semiconductor layer and a second semiconductor layer including a light emitting layer on a substrate;

forming a protrusion having a stacked structure of the first semiconductor layer and the second semiconductor layer, and a depression with the first semiconductor layer exposed to the depression, on a surface of the first semiconductor layer on an opposite side to the substrate by selectively removing a part of the second semiconductor layer and the first semiconductor layer;

forming a trench extending from a bottom surface of the depression to the substrate;

forming a first electrode on the bottom surface of the depression and a side surface of the trench;

forming a second electrode on a surface of the second semiconductor layer of the protrusion on an opposite side to the first semiconductor layer;

forming a first interconnection on a surface of the first electrode on an opposite side to the first semiconductor layer; and

forming a second interconnection on a surface of the second electrode on an opposite side to the second semiconductor layer.

10. The method of claim 9, wherein the first interconnection is buried inside the first electrode in the trench.

11. The method of claim 9, further comprising:

forming a dicing trench separating the first semiconductor layer into a plurality on the substrate,

the trench and the dicing trench being simultaneously formed.

12. The method of claim 9, further comprising:

forming a first metal pillar on a surface of the first interconnection on an opposite side to the first electrode;

forming a second metal pillar on a surface of the second interconnection on an opposite side to the second electrode; and

forming a resin covering a periphery of each of the first metal pillar and the second metal pillar.

13. The method of claim 12, further comprising:

removing the substrate after forming the first metal pillar, the second metal pillar, and the resin.

14. The method of claim 12, further comprising:

forming a dicing trench separating the first semiconductor layer into a plurality on the substrate,

a portion of the resin being buried in the dicing trench when the resin is formed.

15. A method for manufacturing a semiconductor light emitting device, comprising:

sequentially forming a first semiconductor layer and a second semiconductor layer including a light emitting layer on a substrate;

forming a trench piercing the second semiconductor layer and the first semiconductor layer and reaching the substrate;

forming a protrusion having a stacked structure of the first semiconductor layer and the second semiconductor layer, and a depression with the first semiconductor layer exposed to the depression around the trench, on a surface of the first semiconductor layer on an opposite side to the substrate by selectively removing a part of the second semiconductor layer and the first semiconductor layer around the trench;

forming a first electrode on a bottom surface of the depression and a side surface of the trench;

forming a second electrode on a surface of the second semiconductor layer of the protrusion on an opposite side to the first semiconductor layer;

forming a first interconnection on a surface of the first electrode on an opposite side to the first semiconductor layer; and

forming a second interconnection on a surface of the second electrode on an opposite side to the second semiconductor layer.

16. The method of claim 15, wherein the first interconnection is buried inside the first electrode in the trench.

17. The method of claim 15, further comprising:

forming a dicing trench separating the first semiconductor layer into a plurality on the substrate,

the trench and the dicing trench being simultaneously formed.

18. The method of claim 15, further comprising:

forming a first metal pillar on a surface of the first interconnection on an opposite side to the first electrode;

forming a second metal pillar on a surface of the second interconnection on an opposite side to the second electrode; and

forming a resin covering a periphery of each of the first metal pillar and the second metal pillar.

19. The method of claim 18, further comprising:

removing the substrate after forming the first metal pillar, the second metal pillar, and the resin.

20. The method of claim 18, further comprising:

forming a dicing trench separating the first semiconductor layer into a plurality on the substrate,

a portion of the resin being buried in the dicing trench when the resin is formed.