METHOD FOR DELETING DATA FROM NAND TYPE NONVOLATILE MEMORY

• US 20110220983A1
• Filed: 05/24/2011
• Published: 09/15/2011
• Est. Priority Date: 03/31/2006
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: MIYAZAKI, Aya, OSAME, Mitsuaki, MIYAKE, Hiroyuki, YAMAZAKI, Shunpei
• Granted Patent: US 8,212,304 B2
• Time in Patent Office: Days
• US Class Current: 257/316
• CPC Class Codes: G11C 16/0483 comprising cells having several storage transistors connected in series
• CPC Class Codes: G11C 16/08 Address circuits; Decoders; Word-line control circuits
• CPC Class Codes: G11C 16/14 Circuits for erasing electrically, e.g. erase voltage switching circuits
• CPC Class Codes: G11C 8/10 Decoders
• CPC Class Codes: H01L 27/105 including field-effect components
• CPC Class Codes: H01L 29/40114 the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
• CPC Class Codes: H10B 41/10 characterised by the top-view layout
• CPC Class Codes: H10B 41/40 characterised by the peripheral circuit region
• CPC Class Codes: H10B 41/41 of a memory region comprising a cell select transistor, e.g. NAND
• CPC Class Codes: H10B 41/49 comprising different types of peripheral transistor
• CPC Class Codes: H10B 43/10 characterised by the top-view layout

Abstract

To provide a method of releasing charges which have been injected into charge accumulating layers of nonvolatile memory elements without using a substrate terminal such as a p well or an n well, as a method for deleting data from a NAND-type nonvolatile memory. In the method for deleting data from the NAND-type nonvolatile memory, charges stored in a charge accumulating layer of a first nonvolatile memory element are released by applying a first potential to a bit line and a source line, a second potential to a control gate of the first nonvolatile memory element, and a third potential which is different from the second potential to a control gate of a second nonvolatile memory element.

Claims

1. A nonvolatile semiconductor memory device comprising:

a semiconductor substrate including a pair of impurity regions and a channel formation region between the pair of impurity regions;

a first insulating layer over the channel formation region;

a floating gate over the channel formation region with the first insulating layer interposed therebetween;

a second insulating layer over the floating gate; and

a control gate over the floating gate with the second insulating layer interposed therebetween,

wherein the floating gate includes at least a first layer in contact with the first insulating layer, and a second layer over the first layer,

wherein the first layer comprises a semiconductor material,

wherein a band gap of the first layer is smaller than a band gap of the channel formation region, and

wherein the second layer comprises a material selected from the group consisting of a metal, a metal alloy, and a metal compound.

5. The nonvolatile semiconductor memory device according to claim 1, wherein a difference between the band gap of the channel formation region and the band gap of the first layer is 0.1 eV or more.

6. The nonvolatile semiconductor memory device according to claim 1, wherein the first insulating layer includes a silicon oxide layer and a silicon oxynitride layer formed over the silicon oxide layer.

7. The nonvolatile semiconductor memory device according to claim 6, wherein the floating gate is in contact with the silicon oxynitride layer.

8. The nonvolatile semiconductor memory device according to claim 6, wherein the silicon oxide layer is formed by oxidizing the semiconductor substrate by plasma treatment, and the silicon oxynitride layer is formed by nitriding the silicon oxide layer by plasma treatment.

9. The nonvolatile semiconductor memory device according to claim 1, wherein the second layer includes at least one of tungsten, tantalum, titanium and molybdenum.

10. The nonvolatile semiconductor memory device according to claim 1, wherein the second layer includes at least one of a tantalum nitride, a tungsten nitride, a molybdenum nitride and a titanium nitride.

2. A nonvolatile semiconductor memory device comprising:

a semiconductor substrate including a pair of impurity regions and a channel formation region between the pair of impurity regions;

a first insulating layer over the channel formation region;

a floating gate over the channel formation region with the first insulating layer therebetween,

a second insulating layer over the floating gate; and

a control gate over the floating gate with the second insulating layer interposed therebetween,

wherein the floating gate comprises at least a first layer and a second layer,

wherein the first layer is in contact with the first insulating layer and comprises a material having a smaller band gap and lower resistivity than the channel formation region, and

wherein the second layer comprises a material selected from the group consisting of a metal, a metal alloy, and a metal compound.

11. The nonvolatile semiconductor memory device according to claim 2, wherein a difference between the band gap of the channel formation region and the band gap of the first layer is 0.1 eV or more.

12. The nonvolatile semiconductor memory device according to claim 2, wherein the first insulating layer includes a silicon oxide layer and a silicon oxynitride layer formed over the silicon oxide layer.

13. The nonvolatile semiconductor memory device according to claim 12, wherein the floating gate is in contact with the silicon oxynitride layer.

14. The nonvolatile semiconductor memory device according to claim 12, wherein the silicon oxide layer is formed by oxidizing the semiconductor substrate by plasma treatment, and the silicon oxynitride layer is formed by nitriding the silicon oxide layer by plasma treatment.

15. The nonvolatile semiconductor memory device according to claim 2, wherein the second layer includes at least one of tungsten, tantalum, titanium and molybdenum.

16. The nonvolatile semiconductor memory device according to claim 2, wherein the second layer includes at least one of a tantalum nitride, a tungsten nitride, a molybdenum nitride and a titanium nitride.

3. A nonvolatile semiconductor memory device comprising:

a semiconductor substrate including a pair of impurity regions and a channel formation region between the pair of impurity regions;

a first insulating layer over the channel formation region;

a floating gate over the channel formation region with the first insulating layer interposed therebetween,

a second insulating layer over the floating gate; and

a control gate over the floating gate with the second insulating layer interposed therebetween,

wherein the floating gate includes at least a first layer and a second layer, and

wherein barrier energy against electrons in the first layer, formed by the first insulating layer, is higher than barrier energy against electrons in the channel formation region, formed by the first insulating layer, and

wherein the second layer comprises a material selected from the group consisting of a metal, a metal alloy, and a metal compound.

17. The nonvolatile semiconductor memory device according to claim 3, wherein the first insulating layer includes a silicon oxide layer and a silicon oxynitride layer formed over the silicon oxide layer.

18. The nonvolatile semiconductor memory device according to claim 17, wherein the floating gate is in contact with the silicon oxynitride layer.

19. The nonvolatile semiconductor memory device according to claim 17, wherein the silicon oxide layer is formed by oxidizing the semiconductor substrate by plasma treatment, and the silicon oxynitride layer is formed by nitriding the silicon oxide layer by plasma treatment.

20. The nonvolatile semiconductor memory device according to claim 3, wherein the second layer includes at least one of tungsten, tantalum, titanium and molybdenum.

21. The nonvolatile semiconductor memory device according to claim 3, wherein the second layer includes at least one of a tantalum nitride, a tungsten nitride, a molybdenum nitride and a titanium nitride.

4. A nonvolatile semiconductor memory device comprising:

a semiconductor substrate including a pair of impurity regions and a channel formation region between the pair of impurity regions;

a first insulating layer over the channel formation region;

a floating gate over the channel formation region with the first insulating layer interposed therebetween, and

a second insulating layer over the floating gate; and

a control gate over the floating gate with the second insulating layer interposed therebetween,

wherein the floating gate includes at least a first layer and a second layer,

wherein the first layer which is in contact with the first insulating layer comprises germanium or a germanium compound, and

wherein the second layer comprises a material selected from the group consisting of a metal, a metal alloy, and a metal compound.

22. The nonvolatile semiconductor memory device according to claim 4, wherein the first insulating layer includes a silicon oxide layer and a silicon oxynitride layer formed over the silicon oxide layer.

23. The nonvolatile semiconductor memory device according to claim 22, wherein the floating gate is in contact with the silicon oxynitride layer.

24. The nonvolatile semiconductor memory device according to claim 22, wherein the silicon oxide layer is formed by oxidizing the semiconductor substrate by plasma treatment, and the silicon oxynitride layer is formed by nitriding the silicon oxide layer by plasma treatment.

25. The nonvolatile semiconductor memory device according to claim 4, wherein the second layer includes at least one of tungsten, tantalum, titanium and molybdenum.

26. The nonvolatile semiconductor memory device according to claim 4, wherein the second layer includes at least one of a tantalum nitride, a tungsten nitride, a molybdenum nitride and a titanium nitride.

27. The nonvolatile semiconductor memory device according to claim 4, wherein the first layer has a thickness of 1 nm to 20 nm inclusive.

28. The nonvolatile semiconductor memory device according to claim 4, wherein the germanium compound is a germanium oxide or a germanium nitride.