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SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

  • US 20110220987A1
  • Filed: 07/22/2010
  • Published: 09/15/2011
  • Est. Priority Date: 03/10/2010
  • Status: Active Grant
First Claim
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1. A semiconductor memory device comprising:

  • a base including a substrate and a peripheral circuit formed on a surface of the substrate;

    a stacked body including a plurality of conductive layers and a plurality of insulating layers alternately stacked above the base;

    a memory film provided on an inner wall of a memory hole punched through the stacked body to reach a lowermost layer of the conductive layers and including a charge storage film;

    a channel body provided on an inside of the memory film in the memory hole;

    an interconnection provided below the stacked body, and electrically connecting the lowermost layer of the conductive layers in an interconnection region laid out on an outside of a memory cell array region having the memory film and the channel body and the peripheral circuit; and

    a contact plug piercing the stacked body in the interconnection region to reach the lowermost layer of the conductive layers in the interconnection region.

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