SHIELDED GATE TRENCH MOS WITH IMPROVED SOURCE PICKUP LAYOUT
First Claim
1. A method for fabricating a semiconductor device, comprising:
- a) forming a plurality of trenches by applying a first mask, the plurality of trenches include active gate trenches located in an active area, gate runner/termination trenches and source pickup trenches located in a termination area outside an active area containing the active gate trenches;
b) forming a first conductive region in the plurality of trenches;
c) forming an intermediate dielectric region and a termination protection region by applying a second mask;
d) forming a second conductive region in at least some of the trenches;
e) forming a first electrical contact to the second conductive regions and forming a second electrical contact to the first conductive region in the source pickup trenches located in the termination area by applying a third mask;
f) disposing a metal layer; and
g) forming a source metal region and a gate metal region from the metal layer by applying a fourth mask.
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Accused Products
Abstract
A method for fabricating a semiconductor device includes forming a plurality of trenches using a first mask. The trenches include source pickup trenches located in outside a termination area and between two adjacent active areas. First and second conductive regions separated by an intermediate dielectric region are formed using a second mask. A first electrical contact to the first conductive region and a second electrical contact to the second conductive region are formed using a third mask and forming a source metal region. Contacts to a gate metal region are formed using a fourth mask. A semiconductor device includes a source pickup contact located outside a termination region and outside an active region of the device.
86 Citations
25 Claims
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1. A method for fabricating a semiconductor device, comprising:
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a) forming a plurality of trenches by applying a first mask, the plurality of trenches include active gate trenches located in an active area, gate runner/termination trenches and source pickup trenches located in a termination area outside an active area containing the active gate trenches; b) forming a first conductive region in the plurality of trenches; c) forming an intermediate dielectric region and a termination protection region by applying a second mask; d) forming a second conductive region in at least some of the trenches; e) forming a first electrical contact to the second conductive regions and forming a second electrical contact to the first conductive region in the source pickup trenches located in the termination area by applying a third mask; f) disposing a metal layer; and g) forming a source metal region and a gate metal region from the metal layer by applying a fourth mask. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
a semiconductor layer; a plurality of trenches formed in the semiconductor layer, the plurality of trenches include active gate trenches located in an active area, gate runner/termination trenches and source pickup trenches located in a termination area outside the active area wherein a first conductive region is located at a bottom of the trenches and a second conductive region is located at a top of the active gate and gate runner/termination trenches, and wherein the first and second conductive regions are separated by an intermediate dielectric region; a first electrical contact to the second conductive regions; a second electrical contact to the first conductive region of the source pickup trenches located in the termination area; and a source metal region connected to the second electrical contact and a gate metal region connected to the first electrical contact. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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22. A method of filling trenches with conductive material comprising:
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partially filling the trenches with a conductive material by a first deposition process; partially etching the conductive material; and filling an unfilled portion of the trenches by a second deposition process. - View Dependent Claims (23, 24, 25)
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Specification