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Method of Forming a DRAM Array of Devices with Vertically Integrated Recessed Access Device and Digitline

  • US 20110220994A1
  • Filed: 03/10/2010
  • Published: 09/15/2011
  • Est. Priority Date: 03/10/2010
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • forming a first trench in a substrate;

    forming a second trench in the substrate perpendicular to and in a plane below the first trench;

    forming a data line in the second trench;

    forming an access line in the first trench, wherein the access line is formed vertically above the data line;

    forming a contact vertically above the access line.

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