Devices Containing Permanent Charge
First Claim
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1. An edge termination structure comprising:
- a final dielectric trench containing permanent charge;
a junction region adjacent said final dielectric trench, said junction region having a first conductivity type; and
a termination region having a second conductivity type forming a termination junction with the junction region;
wherein said termination region includes at least one guard ring and at least one field plate.
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Abstract
An edge termination structure includes a final dielectric trench containing permanent charge. The final dielectric trench is surrounded by first conductivity type semiconductor material (doped by lateral outdiffusion from the trenches), which in turn is laterally surrounded by second conductivity type semiconductor material.
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Citations
11 Claims
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1. An edge termination structure comprising:
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a final dielectric trench containing permanent charge; a junction region adjacent said final dielectric trench, said junction region having a first conductivity type; and a termination region having a second conductivity type forming a termination junction with the junction region; wherein said termination region includes at least one guard ring and at least one field plate. - View Dependent Claims (2, 3, 4)
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5. An edge termination structure comprising:
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a final dielectric trench containing permanent charge; a junction region adjacent said final dielectric trench, said junction region having a first conductivity type; a termination region having a second conductivity type and forming a termination junction with the junction region; and a combination of field plates with at least one and ring diffusion within said termination region. - View Dependent Claims (6, 7)
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8. An edge termination structure comprising:
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a final dielectric trench containing permanent charge; a junction region adjacent said final dielectric trench, said junction region having a first conductivity type; a termination region having a second conductivity type and forming a termination junction with the junction region;
wherein said junction termination region extends into said termination region with decreasing doping density. - View Dependent Claims (9, 10, 11)
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Specification