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MOSFETs WITH REDUCED CONTACT RESISTANCE

  • US 20110221003A1
  • Filed: 03/09/2010
  • Published: 09/15/2011
  • Est. Priority Date: 03/09/2010
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • at least one transistor located upon and within a semiconductor substrate, said at least one transistor including a gate stack located on an upper surface of the semiconductor substrate and a source region and a drain region located within the semiconductor substrate at the footprint of the gate stack, wherein at least one of said source region and said drain region has a textured surface that includes at least one peak and at least one valley;

    a metal semiconductor alloy disposed on at least the textured surface of the at least one source region and the at least one region; and

    a conductively filled via contact formed atop the metal semiconductor alloy.

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