ALUMINUM INDIUM ANTIMONIDE FOCAL PLANE ARRAY
First Claim
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1. A detector comprising:
- an AlxIn(1-x)Sb absorber layer;
an AlyIn(1-y)Sb passivation layer disposed above the AlxIn(1-x)Sb absorber layer, wherein x<
y;
a junction formed in a region of the AlxIn(1-x)Sb absorber layer; and
a metal contact disposed above the junction and through the AlyIn(1-y)Sb passivation layer.
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Abstract
In one embodiment, a detector includes an AlxIn(1-x)Sb absorber layer, and an AlyIn(1-y)Sb passivation layer disposed above the AlxIn(1-x)Sb absorber layer, wherein x<y. The detector further includes a junction formed in a region of the AlxIn(1-x)Sb absorber layer, and a metal contact disposed above the junction and through the AlyIn(1-y)Sb passivation layer.
11 Citations
20 Claims
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1. A detector comprising:
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an AlxIn(1-x)Sb absorber layer; an AlyIn(1-y)Sb passivation layer disposed above the AlxIn(1-x)Sb absorber layer, wherein x<
y;a junction formed in a region of the AlxIn(1-x)Sb absorber layer; and a metal contact disposed above the junction and through the AlyIn(1-y)Sb passivation layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An infrared sensor array comprising:
a two-dimensional array of detectors, each of the detectors comprising; an AlxIn(1-x)Sb absorber layer; an AlyIn(1-y)Sb passivation layer disposed above the AlxIn(1-x)Sb absorber layer, wherein x<
y;a junction formed in a region of the AlxIn(1-x)Sb absorber layer; a metal contact disposed above the junction and through the AlyIn(1-y)Sb passivation layer; an overglass layer disposed above the metal contact; and a bump contact disposed above the metal contact and through the overglass layer. - View Dependent Claims (10, 11, 12, 13)
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14. A method of fabricating a detector, the method comprising:
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providing an InSb substrate; forming, by epitaxial growth in one growth run, an AlxIn(1-x)Sb absorber layer above a surface of the InSb substrate and an AlyIn(1-y)Sb passivation layer above the AlxIn(1-x)Sb absorber layer, wherein x<
y;forming a junction in a region of the AlxIn(1-x)Sb absorber layer; forming a metal contact above the junction and through the AlyIn(1-y)Sb passivation layer; and removing the InSb substrate to expose the AlxIn(1-x)Sb absorber layer. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification