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Semiconductor Device and Method of Forming Sacrificial Protective Layer to Protect Semiconductor Die Edge During Singulation

  • US 20110221057A1
  • Filed: 02/17/2011
  • Published: 09/15/2011
  • Est. Priority Date: 03/12/2010
  • Status: Active Grant
First Claim
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1. A method of making a semiconductor device, comprising:

  • providing a semiconductor wafer containing a plurality of semiconductor die separated by a saw street;

    forming a first insulating layer over the semiconductor wafer;

    forming a protective layer over the first insulating layer including an edge of the semiconductor die along the saw street;

    singulating the semiconductor wafer through the protective layer and saw street to separate the semiconductor die while protecting the edge of the semiconductor die;

    leading with the protective layer, mounting the semiconductor die to a carrier;

    depositing an encapsulant over the semiconductor die and carrier;

    removing the carrier and protective layer; and

    forming a build-up interconnect structure over the semiconductor die and encapsulant.

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