LOGIC CIRCUIT
First Claim
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1. A logic circuit comprising:
- a first transistor having a gate, a source, and a drain,a second transistor having a gate, a source, and a drain,a first terminal electrically connected to the gate of the second transistor; and
a second terminal electrically connected to a portion where the second transistor is connected to the first transistor,wherein a high power supply voltage terminal is electrically connected to one of the source and the drain of the first transistor, and the gate of the first transistor is electrically connected to the other of the source and the drain of the first transistor;
wherein one of the source and the drain of the second transistor is electrically connected to the other of the source and the drain of the first transistor, and a low power supply voltage terminal is electrically connected to the other of the source and the drain of the second transistor,wherein each of the first transistor and the second transistor includes;
a gate electrode;
a gate insulating layer provided over the gate electrode;
a first oxide semiconductor layer provided over the gate insulating layer;
a source region and a drain region in contact with part of the first oxide semiconductor layer, wherein the source region and the drain region are second oxide semiconductor layers;
a source electrode in contact with the source region; and
a drain electrode in contact with the drain region,wherein the second transistor includes a reduction prevention layer over the first oxide semiconductor layer, the source electrode, and the drain electrode, andwherein the first transistor does not include a reduction prevention layer over the first oxide semiconductor layer, the source electrode, and the drain electrode.
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Abstract
An object is to apply a transistor using an oxide semiconductor to a logic circuit including an enhancement transistor. The logic circuit includes a depletion transistor 101 and an enhancement transistor 102. The transistors 101 and 102 each include a gate electrode, a gate insulating layer, a first oxide semiconductor layer, a second oxide semiconductor layer, a source electrode, and a drain electrode. The transistor 102 includes a reduction prevention layer provided over a region in the first oxide semiconductor layer between the source electrode and the drain electrode.
125 Citations
20 Claims
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1. A logic circuit comprising:
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a first transistor having a gate, a source, and a drain, a second transistor having a gate, a source, and a drain, a first terminal electrically connected to the gate of the second transistor; and a second terminal electrically connected to a portion where the second transistor is connected to the first transistor, wherein a high power supply voltage terminal is electrically connected to one of the source and the drain of the first transistor, and the gate of the first transistor is electrically connected to the other of the source and the drain of the first transistor; wherein one of the source and the drain of the second transistor is electrically connected to the other of the source and the drain of the first transistor, and a low power supply voltage terminal is electrically connected to the other of the source and the drain of the second transistor, wherein each of the first transistor and the second transistor includes; a gate electrode; a gate insulating layer provided over the gate electrode; a first oxide semiconductor layer provided over the gate insulating layer; a source region and a drain region in contact with part of the first oxide semiconductor layer, wherein the source region and the drain region are second oxide semiconductor layers; a source electrode in contact with the source region; and a drain electrode in contact with the drain region, wherein the second transistor includes a reduction prevention layer over the first oxide semiconductor layer, the source electrode, and the drain electrode, and wherein the first transistor does not include a reduction prevention layer over the first oxide semiconductor layer, the source electrode, and the drain electrode. - View Dependent Claims (2, 3, 4, 5)
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6. A logic circuit comprising:
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a first transistor having a gate, a source, and a drain, wherein a first clock signal is input to the gate of the first transistor, and an input signal is input to the one of the source and the drain of the first transistor; a first inverter having an input terminal and an output terminal, the input terminal of the first inverter electrically connected to the other of the source and the drain of the first transistor; a second inverter having an input terminal and an output terminal, the input terminal of the second inverter electrically connected to the output terminal of the first inverter; a third inverter having an input terminal electrically connected to the output terminal of the first inverter, and an output terminal outputting an output signal; and a second transistor having a gate, a source, and a drain, wherein a second clock signal is input to the gate of the second transistor, one of the source and the drain of the second transistor is electrically connected to the other of the source and the drain of the first transistor, and the other of the source and the drain of the second transistor is electrically connected to the output terminal of the second inverter, wherein each of the first inverter and the second inverter includes; a third transistor having a gate, a source, and a drain, a fourth transistor having a gate, a source, and a drain, a first terminal electrically connected to the gate of the fourth transistor; a second terminal electrically connected to a portion where the fourth transistor is connected to the third transistor, wherein a high power supply voltage terminal is electrically connected to one of the source and the drain of the third transistor, and the gate of the third transistor is electrically connected to the other of the source and the drain of the third transistor; wherein one of the source and the drain of the fourth transistor is electrically connected to the other of the source and the drain of the third transistor, and a low power supply voltage terminal is electrically connected to the other of the source and the drain of the fourth transistor, wherein each of the third transistor and the fourth transistor includes; a gate electrode; a gate insulating layer provided over the gate electrode; a first oxide semiconductor layer provided over the gate insulating layer; a source region and a drain region in contact with part of the first oxide semiconductor layer, wherein the source region and the drain region are second oxide semiconductor layers; a source electrode in contact with the source region; and a drain electrode in contact with the drain region, wherein the fourth transistor includes a reduction prevention layer over the first oxide semiconductor layer, the source electrode, and the drain electrode, and wherein the third transistor does not include a reduction prevention layer over the first oxide semiconductor layer, the source electrode, and the drain electrode. - View Dependent Claims (7, 8, 9, 10)
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11. A logic circuit comprising:
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a first transistor having a gate, a source, and a drain, a second transistor having a gate, a source, and a drain, a first terminal electrically connected to the gate of the second transistor; a second terminal electrically connected to a portion where the second transistor is connected to the first transistor, wherein a high power supply voltage terminal is electrically connected to one of the source and the drain of the first transistor, and the gate of the first transistor is electrically connected to the other of the source and the drain of the first transistor; wherein one of the source and the drain of the second transistor is electrically connected to the other of the source and the drain of the first transistor, and a low power supply voltage terminal is electrically connected to the other of the source and the drain of the second transistor, wherein each of the first transistor and the second transistor includes; a gate electrode; a gate insulating layer provided over the gate electrode; an oxide semiconductor layer provided over the gate insulating layer; and a source electrode and a drain electrode in contact with part of the oxide semiconductor layer, wherein the second transistor includes a reduction prevention layer over the oxide semiconductor layer, the source electrode, and the drain electrode, and wherein the first transistor does not include a reduction prevention layer over the oxide semiconductor layer, the source electrode, and the drain electrode. - View Dependent Claims (12, 13, 14, 15)
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16. A logic circuit comprising:
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a first transistor having a gate, a source, and a drain, wherein a first clock signal is input to the gate of the first transistor, and an input signal is input to the one of the source and the drain of the first transistor; a first inverter having an input terminal and an output terminal, the input terminal of the first inverter electrically connected to the other of the source and the drain of the first transistor; a second inverter having an input terminal and an output terminal, the input terminal of the second inverter electrically connected to the output terminal of the first inverter; a third inverter having an input terminal electrically connected to the output terminal of the first inverter, and an output terminal outputting an output signal; and a fourth transistor having a gate, a source, and a drain, wherein a second clock signal is input to the gate of the second transistor, one of the source and the drain of the second transistor is electrically connected to the other of the source and the drain of the first transistor, and the other of the source and the drain of the second transistor is electrically connected to the output terminal of the second inverter, wherein each of the first inverter and the second inverter includes; a third transistor having a gate, a source, and a drain, a fourth transistor having a gate, a source, and a drain, a first terminal electrically connected to the gate of the fourth transistor; a second terminal electrically connected to a portion where the fourth transistor is connected to the third transistor, wherein a high power supply voltage terminal is electrically connected to one of the source and the drain of the third transistor, and the gate of the third transistor is electrically connected to the other of the source and the drain of the third transistor; wherein one of the source and the drain of the fourth transistor is electrically connected to the other of the source and the drain of the third transistor, and a low power supply voltage terminal is electrically connected to the other of the source and the drain of the fourth transistor; wherein each of the third transistor and the fourth transistor includes; a gate electrode; a gate insulating layer provided over the gate electrode; an oxide semiconductor layer provided over the gate insulating layer; and a source electrode and a drain electrode in contact with part of the oxide semiconductor layer, wherein the fourth transistor includes a reduction prevention layer over the oxide semiconductor layer, the source electrode, and the drain electrode, and wherein the third transistor does not include a reduction prevention layer over the oxide semiconductor layer, the source electrode, and the drain electrode. - View Dependent Claims (17, 18, 19, 20)
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Specification