SEALING GLASS, GLASS MEMBER PROVIDED WITH SEALING MATERIAL LAYER, ELECTRONIC DEVICE AND PROCESS FOR PRODUCING IT

• US 20110223371A1
• Filed: 05/25/2011
• Published: 09/15/2011
• Est. Priority Date: 12/12/2008
• Status: Abandoned Application

• Current Assignee: Asahi Glass Company, Limited (AGC, Inc.)
• Original Assignee: Asahi Glass Company, Limited (AGC, Inc.)
• Inventors: KAWANAMI, Sohei
• Application Number:
  US13/115,229
• Publication Number:
  US 20110223371A1
• Time in Patent Office: Days
• US Class Current: 428/76
• CPC Class Codes: C03C 8/24 Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
• CPC Class Codes: G02F 1/1341 Filling or closing of cells
• CPC Class Codes: H01G 9/2077 Sealing arrangements, e.g. to prevent the leakage of the electrolyte
• CPC Class Codes: H05B 33/04 Sealing arrangements , e.g. against humidity
• CPC Class Codes: H10K 50/8426 Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: Y02E 10/542 Dye sensitized solar cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10T 428/239 Complete cover or casing
• CPC Class Codes: Y10T 428/26 Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension

Abstract

The bonding strength to a glass substrate comprising soda lime glass is increased with good reproducibility at a time of laser sealing, to improve the sealing ability and the reliability of an electronic device.

A glass substrate 3 has a sealing region. On the sealing region, a sealing material layer 5 is provided, which is a fired layer of a glass material for sealing containing a sealing glass, a low-expansion filler and a laser absorbent. The sealing glass contains, as represented by mass percentage, from 70 to 90% of Bi₂O₃, from 1 to 20% of ZnO, from 2 to 12% of B₂O₃ and from 10 to 380 ppm of Na₂O. Such a glass substrate 3 and a glass substrate 2 having an element-formed region provided with an electronic element, are laminated, the sealing material layer 5 is irradiated with a laser light 6 to be melted to bond the glass substrates 2 and 3.

Claims

1. A sealing glass comprising, as represented by mass percentage, from 70 to 90% of Bi₂O₃, from 1 to 20% of ZnO, from 2 to 12% of B₂O₃ and from 10 to 380 ppm of Na₂O.

2. The sealing glass according to claim 1, which contains at least one member selected from Al₂O₃, CeO₂, SiO₂, Ag₂O, WO₃, MoO₃, Nb₂O₃, Ta₂O₅, Ga₂O₃, Sb₂O₃, Cs₂O, CaO, SrO, BaO, P₂O₅ and SnO_x (x is 1 or 2) in an amount of at most 10 mass %.

3. A glass material for laser sealing comprising the sealing glass as defined in claim 1, a low-expansion filler and a laser absorbent.

4. A glass member provided with a sealing material layer, which comprises a glass substrate comprising soda lime glass and having a sealing region;

and a sealing material layer comprising a fired layer of a glass material for sealing containing a sealing glass, a low-expansion filler and a laser absorbent, provided on the sealing region of the glass substrate;

wherein the sealing glass comprises, as represented by mass percentage, from 70 to 90% of Bi₂O₃, from 1 to 20% of ZnO, from 2 to 12% of B₂O₃ and from 10 to 380 ppm of Na₂O.

6. The glass member provided with a sealing material layer according to claim 4, wherein the low-expansion filler comprises at least one member selected from silica, alumina, zirconia, zirconium silicate, cordierite, a zirconium phosphate compound, soda lime glass and borosilicate glass, and the glass material for sealing contains the low-expansion filler in an amount of from 1 to 50 vol %.

8. The glass member provided with a sealing material layer according to claim 4, wherein the laser absorbent comprises at least one metal selected from Fe, Cr, Mn, Co, Ni and Cu, or a compound containing the metals, and the glass material for sealing contains the laser absorbent in an amount of from 0.1 to 10 vol %.

10. The glass member provided with a sealing material layer according to claim 4, wherein the sealing glass further contains at least one member selected from Al₂O₃, CeO₂, SiO₂, Ag₂O, WO₃, MoO₃, Nb₂O₃, Ta₂O₅, Ga₂O₃, Sb₂O₃, Cs₂O, CaO, SrO, BaO, P₂O₅ and SnO_x (x is 1 or 2) in an amount of at most 10 mass %.

12. The glass member provided with a sealing material layer according to claim 4, wherein the sealing material layer has a cross-sectional area, that is represented by the product of the thickness and the width, of at most 15,000 μ

m².

5. A glass member provided with a sealing material layer, which comprises a glass substrate comprising alkali-free glass and having a sealing region;

and a sealing material layer comprising a fired layer of a glass material for sealing containing a sealing glass, a low-expansion filler and a laser absorbent, provided on the sealing region of the glass substrate;

wherein the sealing glass comprises, as represented by mass percentage, from 70 to 90% of Bi₂O₃, from 1 to 20% of ZnO, from 2 to 12% of B₂O₃ and from 10 to 380 ppm of Na₂O.

7. The glass member provided with a sealing material layer according to claim 5, wherein the low-expansion filler comprises at least one member selected from silica, alumina, zirconia, zirconium silicate, cordierite, a zirconium phosphate compound, soda lime glass and borosilicate glass, and the glass material for sealing contains the low-expansion filler in an amount of from 1 to 50 vol %.

9. The glass member provided with a sealing material layer according to claim 5, wherein the laser absorbent comprises at least one metal selected from Fe, Cr, Mn, Co, Ni and Cu, or a compound containing the metals, and the glass material for sealing contains the laser absorbent in an amount of from 0.1 to 10 vol %.

11. The glass member provided with a sealing material layer according to claim 5, wherein the sealing glass further contains at least one member selected from Al₂O₃, CeO₂, SiO₂, Ag₂O, WO₃, MoO₃, Nb₂O₃, Ta₂O₅, Ga₂O₃, Sb₂O₃, Cs₂O, CaO, SrO, BaO, P₂O₅ and SnO_x (x is 1 or 2) in an amount of at most 10 mass %.

13. The glass member provided with a sealing material layer according to claim 5, wherein the sealing material layer has a cross-sectional area, that is represented by the product of the thickness and the width, of at most 15,000 μ

m².

14. An electronic device which comprises a first glass substrate comprising soda lime glass and having an element-formed region provided with an electronic element and a first sealing region provided on the outer peripheral side of the element-formed region;

a second glass substrate comprising soda lime glass and having a second sealing region corresponding to the first sealing region of the first glass substrate; and

a sealing layer comprising a melt-bonded layer of a glass material for sealing containing a sealing glass, a low-expansion filler and a laser absorbent, formed to seal a space between the first sealing region of the first glass substrate and the second sealing region of the second glass substrate while a space is provided on the element-formed region;

wherein the sealing glass comprises, as represented by mass percentage, from 70 to 90% of Bi₂O₃, from 1 to 20% of ZnO, from 2 to 12% of B₂O₃ and from 10 to 380 ppm of Na₂O.

16. The electronic device according to claim 14, wherein the sealing glass further contains at least one member selected from Al₂O₃, CeO₂, SiO₂, Ag₂O, WO₃, MoO₃, Nb₂O₃, Ta₂O₅, Ga₂O₃, Sb₂O₃, Cs₂O, CaO, SrO, BaO, P₂O₅ and SnO_x (x is 1 or 2) in an amount of at most 10 mass %.

18. The electronic device according to claim 14, wherein the electronic element is an organic EL element or a solar cell element.

15. An electronic device which comprises a first glass substrate comprising alkali-free glass and having an element-formed region provided with an electronic element and a first sealing region provided on the outer peripheral side of the element-formed region;

a second glass substrate comprising alkali-free glass and having a second sealing region corresponding to the first sealing region of the first glass substrate; and

a sealing layer comprising a melt-bonded layer of a glass material for sealing containing a sealing glass, a low-expansion filler and a laser absorbent, formed to seal a space between the first sealing region of the first glass substrate and the second sealing region of the second glass substrate while a space is provided on the element-formed region;

wherein the sealing glass comprises, as represented by mass percentage, from 70 to 90% of Bi₂O₃, from 1 to 20% of ZnO, from 2 to 12% of B₂O₃ and from 10 to 380 ppm of Na₂O.

17. The electronic device according to claim 15, wherein the sealing glass further contains at least one member selected from Al₂O₃, CeO₂, SiO₂, Ag₂O, WO₃, MoO₃, Nb₂O₃, Ta₂O₅, Ga₂O₃, Sb₂O₃, Cs₂O, CaO, SrO, BaO, P₂O₅ and SnO_x (x is 1 or 2) in an amount of at most 10 mass %.

19. The electronic device according to claim 15, wherein the electronic element is an organic EL element or a solar cell element.

20. A process for producing an electronic device, which comprises a step of preparing a first glass substrate comprising soda lime glass and having an element-formed region provided with an electronic element and a first sealing region provided on the outer peripheral side of the element-formed region;

a step of preparing a second glass substrate comprising soda lime glass and having a second sealing region corresponding to the first sealing region of the first glass substrate and a sealing material layer comprising a fired layer of a glass material for sealing containing a sealing glass, a low-expansion filler and a laser absorbent, formed on the second sealing region;

a step of laminating the first glass substrate and the second glass substrate via the sealing material layer while a space is formed on the element-formed region; and

a step of irradiating the sealing material layer with a laser light through the second glass substrate to melt the sealing material layer thereby to form a sealing layer to seal the space between the first glass substrate and the second glass substrate;

wherein the sealing glass comprises, as represented by mass percentage, from 70 to 90% of Bi₂O₃, from 1 to 20% of ZnO, from 2 to 12% of B₂O₃ and from 10 to 380 ppm of Na₂O.

22. The process for producing an electronic device according to claim 20, wherein the sealing glass further contains at least one member selected from Al₂O₃, CeO₂, SiO₂, Ag₂O, WO₃, MoO₃, Nb₂O₃, Ta₂O₅, Ga₂O₃, Sb₂O₃, Cs₂O, CaO, SrO, BaO, P₂O₅ and SnO_x (x is 1 or 2) in an amount of at most 10 mass %.

24. The process for producing an electronic device according to claim 20, wherein the sealing material layer has a cross-sectional area, as represented by the product of the thickness and the width, of at most 15,000 μ

m².

26. The process for producing an electronic device according to claim 20, wherein the electronic element is an organic EL element or a solar cell element.

21. A process for producing an electronic device, which comprises a step of preparing a first glass substrate comprising alkali-free glass and having an element-formed region provided with an electronic element and a first sealing region provided on the outer peripheral side of the element-formed region;

a step of preparing a second glass substrate comprising alkali-free glass and having a second sealing region corresponding to the first sealing region of the first glass substrate and a sealing material layer comprising a fired layer of a glass material for sealing containing a sealing glass, a low-expansion filler and a laser absorbent, formed on the second sealing region;

a step of laminating the first glass substrate and the second glass substrate via the sealing material layer while a space is formed on the element-formed region; and

a step of irradiating the sealing material layer with a laser light through the second glass substrate to melt the sealing material layer thereby to form a sealing layer to seal the space between the first glass substrate and the second glass substrate;

wherein the sealing glass comprises, as represented by mass percentage, from 70 to 90% of Bi₂O₃, from 1 to 20% of ZnO, from 2 to 12% of B₂O₃ and from 10 to 380 ppm of Na₂O.

23. The process for producing an electronic device according to claim 21, wherein the sealing glass further contains at least one member selected from Al₂O₃, CeO₂, SiO₂, Ag₂O, WO₃, MoO₃, Nb₂O₃, Ta₂O₅, Ga₂O₃, Sb₂O₃, Cs₂O, CaO, SrO, BaO, P₂O₅ and SnO_x (x is 1 or 2) in an amount of at most 10 mass %.

25. The process for producing an electronic device according to claim 21, wherein the sealing material layer has a cross-sectional area, as represented by the product of the thickness and the width, of at most 15,000 μ

m².

27. The process for producing an electronic device according to claim 21, wherein the electronic element is an organic EL element or a solar cell element.