SEMICONDUCTOR DEVICE AND AUTOMOTIVE AC GENERATOR

• US 20110223718A1
• Filed: 05/27/2011
• Published: 09/15/2011
• Est. Priority Date: 08/31/2005
• Status: Active Grant

• Current Assignee: Hitachi Power Semiconductor Device, Ltd. (Minebea Mitsumi, Inc.)
• Original Assignee: Hitachi Power Semiconductor Device, Ltd. (Minebea Mitsumi, Inc.)
• Inventors: Nakamura, Masato, Sasaki, Koji, Matsuyoshi, Satoshi, Ikeda, Osamu, Hiramitsu, Shinji
• Granted Patent: US 8,421,232 B2
• Time in Patent Office: Days
• US Class Current: 438/121
• CPC Class Codes: B23K 35/262 Sn as the principal constituent
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/29099 Material
• CPC Class Codes: H01L 2224/29101 the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/29144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/29199 Material of the matrix
• CPC Class Codes: H01L 2224/29211 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29299 Base material
• CPC Class Codes: H01L 2224/29311 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/32507 comprising an intermetallic compound
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83101 : as prepeg comprising a layer connector, e.g. provided in an insulating plate member
• CPC Class Codes: H01L 2224/83801 : Soldering or alloying
• CPC Class Codes: H01L 24/27 : Manufacturing methods
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01016 : Sulfur [S]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/0133 : Ternary Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: H05K 3/244 : Finish plating of conductors, especially of copper conductors, e.g. for pads or lands selective plating methods H05K3/243; finish plating of conductors made by printing techniques H05K3/246; solder as finish H05K3/3457, e.g. by plating H05K3/3473
• CPC Class Codes: H05K 3/3463 : Solder compositions in relation to features of the printed circuit board or the mounting process

Abstract

A semiconductor device includes a semiconductor element, a support member bonded to a first surface of the semiconductor element with a first bonding material and a lead electrode bonded to a second surface of the semiconductor element supported on the support member with a second bonding material, and further including a method of producing the semiconductor device. Respective connecting parts of the support member and the lead electrode are Ni-plated and each of the first and the second bonding material is a Sn solder having a Cu₆Sn₅ content greater than a eutectic content.

Claims

1. A method of producing a semiconductor device including a semiconductor element and a conductive member to which the semiconductor element is bonded,

wherein the conductive member is plated with a metal layer on the surface thereof, an interior portion of the conductive member has a lower electrical resistivity than the metal layer,

the method comprising the steps of:

setting a Sn-(3-7)Cu solder having a Cu₆Sn₅ content between the semiconductor element and the metal layer plated conductive member; and

depositing the Cu₆SN₅ grains on the metal layer plated conductive member by heating the Sn-(3-7)Cu solder, the Cu₆SN₅ grains being layered on the plated metal layer.

2. A method of producing a semiconductor device according to claim 1,

wherein the Sn-(3-7)Cu solder is a foil, a paste or a wire.

3. A method of producing a semiconductor according to claim 1,

wherein the conductive member is a printed wiring board.

4. A method of producing a semiconductor device according to claim 1,

wherein a surface of the semiconductor element is plated with a metal, the surface of the semiconductor element being faced to the conducive member.

5. A method of producing a semiconductor device according to claim 1, wherein the interior portion of the electrode member is made of Cu.

6. A method of producing a semiconductor device having a semiconductor element, a support member adhered to a first surface of the semiconductor element, and an electrode member bonded to a second surface of the semiconductor element,

wherein the support member and the electrode member are plated with a metal layer on the surface thereof, respectively, an interior portion of the electrode member has a lower electrical resistivity than the metal layer,

the method comprising the steps of:

setting a Sn-(3-7) solder having a Cu₆SN₅ content between the semiconductor element and the plated metal layer of the support member, and

depositing the Cu₆Sn₅ grains on the plated metal layer of the support member and on the electrode member by heating the Sn-(3-7)Cu solder, the Cu₆Sn₅ grains being layered on the plated metal layer.

7. A method of producing a semiconductor according to claim 6, further comprising:

the step of setting a Sn-(3-7)Cu having a Cu₆Sn₅ content between the semiconductor element and the plating metal layer of the electrode member.

8. A method of producing a semiconductor device according to claim 6,

wherein the Sn-(3-7)Cu solder is a foil, a paste or a wire.

9. A method of producing a semiconductor device according to claim 6,

wherein a surface of the semiconductor element is plated with a metal.

10. A method of producing a semiconductor device according to claim 6, wherein the interior portion of the electrode member is made of Cu.